Davide Bisi
Davide Bisi
Transphorm, Inc.
Verified email at transphormusa.com - Homepage
Cited by
Cited by
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements
D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ...
IEEE Transactions on electron devices 60 (10), 3166-3175, 2013
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements
M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ...
IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs
D Bisi, M Meneghini, FA Marino, D Marcon, S Stoffels, M Van Hove, ...
IEEE Electron Device Letters 35 (10), 1004-1006, 2014
Reliability and parasitic issues in GaN-based power HEMTs: A review
G Meneghesso, M Meneghini, I Rossetto, D Bisi, S Stoffels, M Van Hove, ...
Semiconductor Science and Technology 31 (9), 093004, 2016
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs
M Meneghini, I Rossetto, D Bisi, M Ruzzarin, M Van Hove, S Stoffels, ...
IEEE Electron Device Letters 37 (4), 474-477, 2016
Temperature-Dependent Dynamicin GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage
M Meneghini, P Vanmeerbeek, R Silvestri, S Dalcanale, A Banerjee, ...
IEEE transactions on electron devices 62 (3), 782-787, 2015
Trapping and reliability assessment in D-mode GaN-based MIS-HEMTs for power applications
M Meneghini, D Bisi, D Marcon, S Stoffels, M Van Hove, TL Wu, ...
IEEE transactions on power electronics 29 (5), 2199-2207, 2013
Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements
G Meneghesso, M Meneghini, D Bisi, I Rossetto, A Cester, UK Mishra, ...
Semiconductor science and technology 28 (7), 074021, 2013
Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons
M Meneghini, D Bisi, D Marcon, S Stoffels, M Van Hove, TL Wu, ...
Applied Physics Letters 104 (14), 143505, 2014
Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate
D Bisi, M Meneghini, M Van Hove, D Marcon, S Stoffels, TL Wu, ...
physica status solidi (a) 212 (5), 1122-1129, 2015
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress
G Meneghesso, M Meneghini, A Stocco, D Bisi, C De Santi, I Rossetto, ...
Microelectronic engineering 109, 257-261, 2013
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
G Meneghesso, M Meneghini, D Bisi, I Rossetto, TL Wu, M Van Hove, ...
Microelectronics Reliability 58, 151-157, 2016
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors
D Bisi, SH Chan, X Liu, R Yeluri, S Keller, M Meneghini, G Meneghesso, ...
Applied Physics Letters 108 (11), 112104, 2016
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time …
E Zanoni, M Meneghini, G Meneghesso, D Bisi, I Rossetto, A Stocco
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: Correlation with GaN buffer design
D Bisi, A Chini, F Soci, A Stocco, M Meneghini, A Pantellini, A Nanni, ...
IEEE Electron Device Letters 36 (10), 1011-1014, 2015
Metalorganic chemical vapor deposition and characterization of (Al, Si) O dielectrics for GaN-based devices
SH Chan, M Tahhan, X Liu, D Bisi, C Gupta, O Koksaldi, H Li, T Mates, ...
Japanese Journal of Applied Physics 55 (2), 021501, 2016
Instability of Dynamic- and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors
M Ruzzarin, M Meneghini, D Bisi, M Sun, T Palacios, G Meneghesso, ...
IEEE Transactions on Electron Devices 64 (8), 3126-3131, 2017
Proton induced trapping effect on space compatible GaN HEMTs
A Stocco, S Gerardin, D Bisi, S Dalcanale, F Rampazzo, M Meneghini, ...
Microelectronics Reliability 54 (9-10), 2213-2216, 2014
High-voltage double-pulsed measurement system for GaN-based power HEMTs
D Bisi, A Stocco, M Meneghini, F Rampazzo, A Cester, G Meneghesso, ...
2014 IEEE International Reliability Physics Symposium, CD. 11.1-CD. 11.4, 2014
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
TL Wu, D Marcon, N Ronchi, B Bakeroot, S You, S Stoffels, M Van Hove, ...
Solid-State Electronics 103, 127-130, 2015
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