| Chemical vapor deposition synthesis of graphene on copper with methanol, ethanol, and propanol precursors A Guermoune, T Chari, F Popescu, SS Sabri, J Guillemette, HS Skulason, ... Carbon 49 (13), 4204-4210, 2011 | 431 | 2011 |
| Probing charge transfer at surfaces using graphene transistors PL Levesque, SS Sabri, CM Aguirre, J Guillemette, M Siaj, P Desjardins, ... Nano letters 11 (1), 132-137, 2011 | 376 | 2011 |
| Graphene field effect transistors with parylene gate dielectric SS Sabri, PL Levesque, CM Aguirre, J Guillemette, R Martel, T Szkopek Applied Physics Letters 95 (24), 2009 | 143 | 2009 |
| New generation 6.5 kV SiC power MOSFET S Sabri, E Van Brunt, A Barkley, B Hull, M O'Loughlin, A Burk, S Allen, ... 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 76 | 2017 |
| Short-circuit degradation of 10-kV 10-A SiC MOSFET EP Eni, S Bęczkowski, S Munk-Nielsen, T Kerekes, R Teodorescu, ... IEEE Transactions on Power Electronics 32 (12), 9342-9354, 2017 | 76 | 2017 |
| Reliability studies of SiC vertical power MOSFETs DJ Lichtenwalner, B Hull, E Van Brunt, S Sabri, DA Gajewski, D Grider, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-6, 2018 | 64 | 2018 |
| Quantum hall effect in hydrogenated graphene J Guillemette, SS Sabri, B Wu, K Bennaceur, PE Gaskell, M Savard, ... Physical review letters 110 (17), 176801, 2013 | 44 | 2013 |
| Low-frequency noise and hysteresis in graphene field-effect transistors on oxide SA Imam, S Sabri, T Szkopek Micro & Nano Letters 5 (1), 37-41, 2010 | 43 | 2010 |
| Performance and reliability impacts of extended epitaxial defects on 4H-SiC power devices E Van Brunt, A Burk, DJ Lichtenwalner, R Leonard, S Sabri, DA Gajewski, ... Materials science forum 924, 137-142, 2018 | 37 | 2018 |
| Large area graphene ion sensitive field effect transistors with tantalum pentoxide sensing layers for pH measurement at the Nernstian limit I Fakih, S Sabri, F Mahvash, M Nannini, M Siaj, T Szkopek Applied Physics Letters 105 (8), 2014 | 35 | 2014 |
| Reliability assessment of a large population of 3.3 kV, 45 A 4H-SIC MOSFETs E Van Brunt, DJ Lichtenwalner, R Leonard, A Burk, S Sabri, B Hull, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 31 | 2017 |
| Reliability of SiC MOSFET with danfoss bond buffer technology in automotive traction power modules A Streibel, M Becker, O Muehlfeld, B Hull, S Sabri, DJ Lichtenwalner, ... PCIM Europe 2019; International Exhibition and Conference for Power …, 2019 | 26 | 2019 |
| Effect of capacitive current on reverse recovery of body diode of 10kV SiC MOSFETs and external 10kV SiC JBS diodes A Kumar, K Vechalapu, S Bhattacharya, V Veliadis, E Van Brunt, D Grider, ... 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 22 | 2017 |
| 15 kV n-GTOs in 4H-SiC SH Ryu, DJ Lichtenwalner, M O’Loughlin, C Capell, J Richmond, ... Materials Science Forum 963, 651-654, 2019 | 18 | 2019 |
| Gate oxide reliability of SiC MOSFETs and capacitors fabricated on 150mm wafers DJ Lichtenwalner, S Sabri, E Van Brunt, B Hull, S Ganguly, DA Gajewski, ... Materials Science Forum 963, 745-748, 2019 | 16 | 2019 |
| Ruggedness of 6.5 kV, 30 a SiC MOSFETs in extreme transient conditions A Kumar, S Parashar, S Sabri, E Van Brunt, S Bhattacharya, V Veliadis 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 13 | 2018 |
| Enhancing gas induced charge doping in graphene field effect transistors by non-covalent functionalization with polyethyleneimine SS Sabri, J Guillemette, A Guermoune, M Siaj, T Szkopek Applied Physics Letters 100 (11), 2012 | 13 | 2012 |
| Accelerated testing of SiC power devices DJ Lichtenwalner, S Sabri, E van Brunt, B Hull, SH Ryu, P Steinmann, ... 2020 IEEE International Integrated Reliability Workshop (IIRW), 1-6, 2020 | 9 | 2020 |
| Blocking performance improvements for 4H-SiC P-GTO thyristors with carrier lifetime enhancement processes SH Ryu, DJ Lichtenwalner, M O'Loughlin, E Van Brunt, C Capell, C Jonas, ... Materials Science Forum 924, 633-636, 2018 | 8 | 2018 |
| Avalanche ruggedness characterization of 10 kv 4h-sic mosfets A Kumar, S Parashar, E Van Brunt, S Sabri, S Ganguly, S Bhattacharya, ... Materials Science Forum 963, 773-776, 2019 | 6 | 2019 |
