| Thermoelectric properties and crystallographic shear structures in titanium oxides of the Magneli phases S Harada, K Tanaka, H Inui Journal of applied physics 108 (8), 2010 | 200 | 2010 |
| High-efficiency conversion of threading screw dislocations in 4H-SiC by solution growth Y Yamamoto, S Harada, K Seki, A Horio, T Mitsuhashi, T Ujihara Applied physics express 5 (11), 115501, 2012 | 111 | 2012 |
| Improvement mechanism of sputtered AlN films by high-temperature annealing S Xiao, R Suzuki, H Miyake, S Harada, T Ujihara Journal of Crystal Growth 502, 41-44, 2018 | 92 | 2018 |
| Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method Y Yamamoto, S Harada, K Seki, A Horio, T Mitsuhashi, D Koike, ... Applied Physics Express 7 (6), 065501, 2014 | 70 | 2014 |
| Improvement of Grain-Boundary Conductivity of Trivalent Cation-Doped Barium Zirconate Sintered at 1600° C by Co-doping Scandium and Yttrium S Imashuku, T Uda, Y Nose, K Kishida, S Harada, H Inui, Y Awakura Journal of the Electrochemical Society 155 (6), B581-B586, 2008 | 64 | 2008 |
| High-speed prediction of computational fluid dynamics simulation in crystal growth Y Tsunooka, N Kokubo, G Hatasa, S Harada, M Tagawa, T Ujihara CrystEngComm 20 (41), 6546-6550, 2018 | 63 | 2018 |
| Effect of aluminum addition on the surface step morphology of 4H–SiC grown from Si–Cr–C solution T Mitani, N Komatsu, T Takahashi, T Kato, S Harada, T Ujihara, ... Journal of Crystal Growth 423, 45-49, 2015 | 59 | 2015 |
| Evolution of threading screw dislocation conversion during solution growth of 4H-SiC S Harada, Y Yamamoto, K Seki, A Horio, T Mitsuhashi, M Tagawa, ... APL Materials 1 (2), 2013 | 56 | 2013 |
| Influence of solution flow on step bunching in solution growth of SiC crystals C Zhu, S Harada, K Seki, H Zhang, H Niinomi, M Tagawa, T Ujihara Crystal growth & design 13 (8), 3691-3696, 2013 | 50 | 2013 |
| Different behavior of threading edge dislocation conversion during the solution growth of 4H–SiC depending on the Burgers vector S Harada, Y Yamamoto, K Seki, A Horio, M Tagawa, T Ujihara Acta materialia 81, 284-290, 2014 | 40 | 2014 |
| Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent K Kusunoki, K Kamei, K Seki, S Harada, T Ujihara Journal of crystal growth 392, 60-65, 2014 | 40 | 2014 |
| Conversion mechanism of threading screw dislocation during SiC solution growth T Ujihara, S Kozawa, K Seki, A Alexander, Y Yamamoto, S Harada Materials Science Forum 717, 351-354, 2012 | 37 | 2012 |
| Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO 3 solution containing Ag nanoparticles H Niinomi, T Sugiyama, M Tagawa, K Murayama, S Harada, T Ujihara CrystEngComm 18 (39), 7441-7448, 2016 | 36 | 2016 |
| Non-uniform electrodeposition of zinc on the (0001) plane T Mitsuhashi, Y Ito, Y Takeuchi, S Harada, T Ujihara Thin Solid Films 590, 207-213, 2015 | 35 | 2015 |
| Two-step SiC solution growth for dislocation reduction K Murayama, T Hori, S Harada, S Xiao, M Tagawa, T Ujihara Journal of Crystal Growth 468, 874-878, 2017 | 34 | 2017 |
| Achiral metastable crystals of sodium chlorate forming prior to chiral crystals in solution growth H Niinomi, T Yamazaki, S Harada, T Ujihara, H Miura, Y Kimura, ... Crystal growth & design 13 (12), 5188-5192, 2013 | 33 | 2013 |
| Polytype transformation by replication of stacking faults formed by two-dimensional nucleation on spiral steps during SiC solution growth S Harada, Alexander, K Seki, Y Yamamoto, C Zhu, Y Yamamoto, S Arai, ... Crystal growth & design 12 (6), 3209-3214, 2012 | 32 | 2012 |
| Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents N Komatsu, T Mitani, Y Hayashi, T Kato, S Harada, T Ujihara, H Okumura Journal of Crystal Growth 458, 37-43, 2017 | 28 | 2017 |
| Geometrical design of a crystal growth system guided by a machine learning algorithm W Yu, C Zhu, Y Tsunooka, W Huang, Y Dang, K Kutsukake, S Harada, ... CrystEngComm 23 (14), 2695-2702, 2021 | 27 | 2021 |
| Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth Y Dang, C Zhu, M Ikumi, M Takaishi, W Yu, W Huang, X Liu, K Kutsukake, ... CrystEngComm 23 (9), 1982-1990, 2021 | 27 | 2021 |
Ujihara ToruNagoya Univ.Verified email at nagoya-u.jp
