William Gallagher
William Gallagher
Email verificata su tsmc.com
Titolo
Citata da
Citata da
Anno
Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory
SSP Parkin, KP Roche, MG Samant, PM Rice, RB Beyers, ...
Journal of Applied Physics 85 (8), 5828-5833, 1999
13981999
Experimental evidence for vortex-glass superconductivity in Y-Ba-Cu-O
RH Koch, V Foglietti, WJ Gallagher, G Koren, A Gupta, MPA Fisher
Physical review letters 63 (14), 1511, 1989
11441989
Magnetic response of a single, isolated gold loop
V Chandrasekhar, RA Webb, MJ Brady, MB Ketchen, WJ Gallagher, ...
Physical review letters 67 (25), 3578, 1991
9621991
Magnetic memory array using magnetic tunnel junction devices in the memory cells
WJ Gallagher, JH Kaufman, SSP Parkin, RE Scheuerlein
US Patent 5,640,343, 1997
8571997
Direct observation of electronic anisotropy in single-crystal Y 1 Ba 2 Cu 3 O 7− x
TR Dinger, TK Worthington, WJ Gallagher, RL Sandstrom
Physical review letters 58 (25), 2687, 1987
7921987
Microstructured magnetic tunnel junctions
WJ Gallagher, SSP Parkin, Y Lu, XP Bian, A Marley, KP Roche, ...
Journal of Applied Physics 81 (8), 3741-3746, 1997
5581997
Observation of large low‐field magnetoresistance in trilayer perpendicular transport devices made using doped manganate perovskites
JZ Sun, WJ Gallagher, PR Duncombe, L Krusin‐Elbaum, RA Altman, ...
Applied Physics Letters 69 (21), 3266-3268, 1996
4711996
Magnetic tunnel junction device with antiferromagnetically coupled pinned layer
WJ Gallagher, SSP Parkin, JC Slonczewski, JZ Sun, IBM Corporation, ...
US Patent 5,841,692, 1998
447*1998
High‐resolution scanning SQUID microscope
JR Kirtley, MB Ketchen, KG Stawiasz, JZ Sun, WJ Gallagher, SH Blanton, ...
Applied Physics Letters 66 (9), 1138-1140, 1995
4431995
Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
WJ Gallagher, SSP Parkin
IBM Journal of Research and Development 50 (1), 5-23, 2006
4362006
Magnetic tunnel junctions with controlled magnetic response
WJ Gallagher, SSP Parkin, JC Slonczewski, JZ Sun
US Patent 5,650,958, 1997
3461997
Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy
M Gajek, JJ Nowak, JZ Sun, PL Trouilloud, EJ O’sullivan, DW Abraham, ...
Applied Physics Letters 100 (13), 132408, 2012
2932012
A 10 ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell
R Scheuerlein, W Gallagher, S Parkin, A Lee, S Ray, R Robertazzi, ...
2000 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2000
2592000
Magnetization reversal in micron-sized magnetic thin films
RH Koch, JG Deak, DW Abraham, PL Trouilloud, RA Altman, Y Lu, ...
Physical review letters 81 (20), 4512, 1998
2471998
Thermally assisted magnetization reversal in submicron-sized magnetic thin films
RH Koch, G Grinstein, GA Keefe, Y Lu, PL Trouilloud, WJ Gallagher, ...
Physical review letters 84 (23), 5419, 2000
2452000
Growth and giant magnetoresistance properties of La‐deficient LaxMnO3−δ (0.67≤x≤1) films
A Gupta, TR McGuire, PR Duncombe, M Rupp, JZ Sun, WJ Gallagher, ...
Applied physics letters 67 (23), 3494-3496, 1995
2361995
Lanthanum gallate substrates for epitaxial high‐temperature superconducting thin films
RL Sandstrom, EA Giess, WJ Gallagher, A Segmüller, EI Cooper, ...
Applied physics letters 53 (19), 1874-1876, 1988
2341988
Colossal magnetoresistance of 1 000 000‐fold magnitude achieved in the antiferromagnetic phase of La1−xCaxMnO3
GQ Gong, C Canedy, G Xiao, JZ Sun, A Gupta, WJ Gallagher
Applied Physics Letters 67 (12), 1783-1785, 1995
2281995
Design considerations for MRAM
TM Maffitt, JK DeBrosse, JA Gabric, ET Gow, MC Lamorey, JS Parenteau, ...
IBM Journal of Research and Development 50 (1), 25-39, 2006
2182006
Ambegaokar-Baratoff–Ginzburg-Landau crossover effects on the critical current density of granular superconductors
JR Clem, B Bumble, SI Raider, WJ Gallagher, YC Shih
Physical Review B 35 (13), 6637, 1987
2051987
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–20