Design and analysis of a low loss, wideband digital step attenuator with minimized amplitude and phase variations I Song, MK Cho, JD Cressler
IEEE Journal of Solid-State Circuits 53 (8), 2202-2213, 2018
64 2018 A true time delay-based SiGe bi-directional T/R chipset for large-scale wideband timed array antennas MK Cho, I Song, JD Cressler
2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 272-275, 2018
39 2018 A switchless CMOS bi-directional distributed gain amplifier with multi-octave bandwidth MK Cho, JG Kim, D Baek
IEEE microwave and wireless components letters 23 (11), 611-613, 2013
30 2013 An X-Band 5 Bit Phase Shifter With Low Insertion Loss in 0.18 MK Cho, D Baek, JG Kim
IEEE Microwave and Wireless Components Letters 22 (12), 648-650, 2012
30 2012 A new wideband, low insertion loss, high linearity SiGe RF switch CD Cheon, MK Cho, SG Rao, AS Cardoso, JD Connor, JD Cressler
IEEE Microwave and Wireless Components Letters 30 (10), 985-988, 2020
28 2020 An X/Ku-band bi-directional true time delay T/R chipset in 0.13 µm CMOS technology MK Cho, JH Han, JH Kim, JG Kim
2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-3, 2014
28 2014 A CMOS centric 77GHz automotive radar architecture C Kim, P Park, DY Kim, KH Park, M Park, MK Cho, SJ Lee, JG Kim, YS Eo, ...
2012 IEEE Radio Frequency Integrated Circuits Symposium, 131-134, 2012
28 2012 A compact, wideband lumped-element Wilkinson power divider/combiner using symmetric inductors with embedded capacitors I Ju, MK Cho, I Song, JD Cressler
IEEE Microwave and Wireless Components Letters 26 (8), 595-597, 2016
25 2016 An active bi-directional SiGe DPDT switch with multi-octave bandwidth MK Cho, I Song, JG Kim, JD Cressler
IEEE Microwave and Wireless Components Letters 26 (4), 279-281, 2016
21 2016 A 5-20 GHz 5-Bit True Time Delay Circuit in 0.18㎛ CMOS Technology JY Choi, MK Cho, D Baek, JG Kim
JSTS: Journal of Semiconductor Technology and Science 13 (3), 193-197, 2013
21 2013 A SiGe-BiCMOS wideband active bidirectional digital step attenuator with bandwidth tuning and equalization MK Cho, I Song, ZE Fleetwood, JD Cressler
IEEE Transactions on Microwave Theory and Techniques 66 (8), 3866-3876, 2018
18 2018 A SiGe-BiCMOS wideband (2–22 GHz) active power divider/combiner circuit supporting bidirectional operation I Song, MK Cho, JG Kim, JD Cressler
IEEE Transactions on Microwave Theory and Techniques 64 (12), 4676-4684, 2016
17 2016 A Broadband Digital Step Attenuator with Low Phase Error and Low Insertion Loss in 0.18‐μm SOI CMOS Technology MK Cho, JG Kim, D Baek
ETRI journal 35 (4), 638-643, 2013
16 2013 Compact X‐band CMOS bidirectional gain amplifier without T/R switches MK Cho, D Baek, JG Kim
Electronics letters 49 (1), 66-68, 2013
15 2013 CMOS-based bi-directional T/R chipsets for phased array antenna MK Cho, SH Yoon, S Sim, L Jeon, JG Kim
2012 IEEE/MTT-S International Microwave Symposium Digest, 1-3, 2012
15 2012 On the application of inverse-mode SiGe HBTs in RF receivers for the mitigation of single-event transients I Song, MK Cho, MA Oakley, A Ildefonso, I Ju, SP Buchner, D McMorrow, ...
IEEE transactions on Nuclear Science 64 (5), 1142-1150, 2017
14 2017 Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules I Ju, RL Schmid, MK Cho, S Zeinolabedinzadeh, M Mitchell, JD Cressler
2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016
14 2016 DC‐20 GHz 5‐BIT CMOS digital step attenuator with low insertion loss and phase error MK Cho, D Baek, JG Kim
Microwave and optical technology letters 55 (4), 762-764, 2013
12 2013 SiGe HBT profiles with enhanced inverse-mode operation and their impact on single-event transients ZE Fleetwood, A Ildefonso, GN Tzintzarov, B Wier, U Raghunathan, ...
IEEE transactions on Nuclear Science 65 (1), 399-406, 2017
11 2017 The use of inverse-mode SiGe HBTs as active gain stages in low-noise amplifiers for the mitigation of single-event transients I Song, MK Cho, NE Lourenco, ZE Fleetwood, S Jung, NJH Roche, ...
IEEE transactions on Nuclear Science 64 (1), 359-366, 2016
11 2016 