|Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions|
V Misra, S Venkatesan, CC Hobbs, B Smith, JS Cope, EB Wilson
US Patent 5,960,270, 1999
|Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics|
G Lucovsky, Y Wu, H Niimi, V Misra, JC Phillips
Applied Physics Letters 74 (14), 2005-2007, 1999
|Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates|
Z Zhang, V Misra, SMA Bedair, M Ozturk
US Patent 6,709,929, 2004
|Flexible technologies for self-powered wearable health and environmental sensing|
V Misra, A Bozkurt, B Calhoun, T Jackson, JS Jur, J Lach, B Lee, J Muth, ...
Proceedings of the IEEE 103 (4), 665-681, 2015
|Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications|
Q Li, G Mathur, M Homsi, S Surthi, V Misra, V Malinovskii, KH Schweikart, ...
Applied physics letters 81 (8), 1494-1496, 2002
|A capacitance-based methodology for work function extraction of metals on high-/spl kappa|
R Jha, J Gurganos, YH Kim, R Choi, J Lee, V Misra
IEEE Electron Device Letters 25 (6), 420-423, 2004
|Multibit memory using self‐assembly of mixed ferrocene/porphyrin monolayers on silicon|
Q Li, G Mathur, S Gowda, S Surthi, Q Zhao, L Yu, JS Lindsey, DF Bocian, ...
Advanced Materials 16 (2), 133-137, 2004
|Plasmonic nanoparticles and nanowires: design, fabrication and application in sensing|
T Vo-Dinh, A Dhawan, SJ Norton, CG Khoury, HN Wang, V Misra, ...
The Journal of Physical Chemistry C 114 (16), 7480-7488, 2010
|Low-power wearable systems for continuous monitoring of environment and health for chronic respiratory disease|
J Dieffenderfer, H Goodell, S Mills, M McKnight, S Yao, F Lin, E Beppler, ...
IEEE journal of biomedical and health informatics 20 (5), 1251-1264, 2016
|Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS|
V Misra, H Zhong, H Lazar
IEEE Electron Device Letters 23 (6), 354-356, 2002
|Issues in High-ĸ Gate Stack Interfaces|
V Misra, G Lucovsky, G Parsons
MRS bulletin 27 (3), 212-216, 2002
|Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric|
A Suresh, S Novak, P Wellenius, V Misra, JF Muth
Applied Physics Letters 94 (12), 123501, 2009
|Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein|
Z Zhang, V Misra, SMA Bedair, M Ozturk
US Patent 6,914,256, 2005
|Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with and |
V Misra, GP Heuss, H Zhong
Applied Physics Letters 78 (26), 4166-4168, 2001
|Porphyrins bearing mono or tripodal benzylphosphonic acid tethers for attachment to oxide surfaces|
RS Loewe, A Ambroise, K Muthukumaran, K Padmaja, AB Lysenko, ...
The Journal of organic chemistry 69 (5), 1453-1460, 2004
|Porphyrins bearing arylphosphonic acid tethers for attachment to oxide surfaces|
K Muthukumaran, RS Loewe, A Ambroise, S Tamaru, Q Li, G Mathur, ...
The Journal of organic chemistry 69 (5), 1444-1452, 2004
|Synthesis of porphyrins bearing hydrocarbon tethers and facile covalent attachment to Si (100)|
Z Liu, AA Yasseri, RS Loewe, AB Lysenko, VL Malinovskii, Q Zhao, ...
The Journal of organic chemistry 69 (17), 5568-5577, 2004
|Characterization of electrodes on Zr silicate and dielectrics|
H Zhong, G Heuss, V Misra, H Luan, CH Lee, DL Kwong
Applied Physics Letters 78 (8), 1134-1136, 2001
|Method and system for molecular charge storage field effect transistor|
V Misra, DF Bocian, WG Kuhr, JS Lindsey
US Patent 6,674,121, 2004
|Electrical characterization of redox-active molecular monolayers on for memory applications|
Q Li, S Surthi, G Mathur, S Gowda, V Misra, TA Sorenson, RC Tenent, ...
Applied physics letters 83 (1), 198-200, 2003