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Jong-Hoon Kang
Jong-Hoon Kang
POSTECH, Assistant Professor
Verified email at postech.ac.kr - Homepage
Title
Cited by
Cited by
Year
Isostructural metal-insulator transition in VO2
D Lee, B Chung, Y Shi, GY Kim, N Campbell, F Xue, K Song, SY Choi, ...
Science 362 (6418), 1037-1040, 2018
1992018
Lightwave-driven gapless superconductivity and forbidden quantum beats by terahertz symmetry breaking
X Yang, C Vaswani, C Sundahl, L Mootz, Luo, JH Kang, IE Perakis, ...
Nature Photonics 13, 707-713, 2019
1152019
Terahertz-light quantum tuning of a metastable emergent phase hidden by superconductivity
X Yang, C Vaswani, C Sundahl, M Mootz, P Gagel, L Luo, JH Kang, ...
Nature Materials 17, 586-591, 2018
912018
Robotic four-dimensional pixel assembly of van der Waals solids
AJ Mannix, A Ye, SH Sung, A Ray, F Mujid, C Park, M Lee, JH Kang, ...
Nature Nanotechnology 17, 361–366, 2022
812022
Terahertz second-harmonic generation from lightwave acceleration of symmetry-breaking nonlinear supercurrents
C Vaswani, M Mootz, C Sundahl, DH Mudiyanselage, JH Kang, X Yang, ...
Physical Review Letters 124 (20), 207003, 2020
782020
Light quantum control of persisting Higgs modes in iron-based superconductors (*equal contribution)
C Vaswani*, JH Kang*, M Mootz*, L Luo, X Yang, C Sundahl, D Cheng, ...
Nature Communications 12 (1), 1-9, 2021
59*2021
Side emitting lens, light emitting device using the side emitting lens, mold assembly for preparing the side emitting lens and method for preparing the side emitting lens
D Ha, B Shin, M Choi, JH Kang, M Yu, J Lee
US Patent App. 11/505,829, 2007
382007
Ultrafast nonthermal terahertz electrodynamics and possible quantum energy transfer in a Nb3Sn superconductor
X Yang, X Zhao, C Vaswani, C Sundahl, B Song, Y Yao, D Cheng, Z Liu, ...
Phys. Rev. B 99, 094504, 2019
372019
Quantum coherence tomography of light-controlled superconductivity (*equal contribution)
L Luo*, M Mootz*, JH Kang*, C Huang, K Eom, JW Lee, C Vaswani, ...
Nature Physics 19, 201-209, 2023
352023
Origin of the emergence of higher Tc than bulk in iron chalcogenide thin films
S Seo, JH Kang, MJ Oh, CB Eom, S Lee
Scientific Reports 7, 9994, 2017
322017
Resist-Free Lithography for Monolayer Transition Metal Dichalcogenides
PK Poddar, Y Zhong, AJ Mannix, F Mujid, J Yu, C Liang, JH Kang, M Lee, ...
Nano Letters 22 (2), 726–732, 2022
282022
Thin gallium nitride light emitting diode device
J Lee, B Shin, M Choi, JH Kang, M Yu, B Oh
US Patent App. 11/298,505, 2006
282006
Light emitting diode device having advanced light extraction efficiency and preparation method thereof
B Shin, MH Choi, D Ha, M Yu, JH Kang, J Lee, H Shin
US Patent App. 11/488,183, 2007
272007
Method for fabricating semiconductor device
TG Kim, JH Kang, E Jo, G Choi, H Choi
US Patent App. 14/294,287, 2014
262014
Control of epitaxial BaFe2As2 atomic configurations with substrate surface terminations
JH Kang, L Xie, Y Wang, H Lee, N Campbell, J Jiang, PJ Ryan, ...
Nano Letters 18 (10), 6347-6352, 2018
202018
Superconductivity in undoped BaFe2As2 by tetrahedral geometry design
JH Kang, JW Kim, PJ Ryan, L Xie, L Guo, C Sundahl, J Schad, ...
Proc. Natl. Acad. Sci. U.S.A. 117 (35), 21170-21174, 2020
192020
Method for manufacturing GaN-based light emitting diode using laser lift-off technique and light emitting diode manufactured thereby
J Lee, B Shin, M Choi, JH Kang, M Yu, B Oh
US Patent App. 11/175,182, 2006
162006
Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography
VL Nguyen, M Seol, J Kwon, EK Lee, WJ Jang, HW Kim, C Liang, ...
Nature Electronics 6 (2), 146-153, 2023
142023
Recessed channel array transistors, and semiconductor devices including a recessed channel array transistor
J Ryu, D Kim, S Jeong, S Choi, Y Shin, T Park, J Yoo, JH Kang
US Patent 9,190,495, 2015
142015
Method for preparing light emitting diode device having heat dissipation rate enhancement
J Lee, M Choi, B Shin, JH Kang, M Yu, D Ha, D Kho, S Chun, S Chang, ...
US Patent App. 11/474,972, 2006
142006
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