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Robert D Richards
Robert D Richards
Research Fellow, University of Sheffield
Verified email at sheffield.ac.uk
Title
Cited by
Cited by
Year
Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ...
physica status solidi (b) 251 (6), 1276-1281, 2014
992014
Effects of rapid thermal annealing on GaAs1-xBix alloys
AR Mohmad, F Bastiman, CJ Hunter, R Richards, SJ Sweeney, JS Ng, ...
Applied Physics Letters 101 (1), 2012
762012
Absorption Characteristics ofDiodes in the Near-Infrared
CJ Hunter, F Bastiman, AR Mohmad, R Richards, JS Ng, SJ Sweeney, ...
IEEE Photonics Technology Letters 24 (23), 2191-2194, 2012
712012
Experimental and theoretical studies of band gap alignment in GaAs1− xBix/GaAs quantum wells
R Kudrawiec, J Kopaczek, MP Polak, P Scharoch, M Gladysiewicz, ...
Journal of Applied Physics 116 (23), 2014
632014
Molecular beam epitaxy growth of GaAsBi using As2 and As4
RD Richards, F Bastiman, CJ Hunter, DF Mendes, AR Mohmad, ...
Journal of Crystal Growth 390, 120-124, 2014
622014
Demonstration of InAsBi photoresponse beyond 3.5 μm
IC Sandall, F Bastiman, B White, R Richards, D Mendes, JPR David, ...
Applied Physics Letters 104 (17), 2014
542014
Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices
RD Richards, A Mellor, F Harun, JS Cheong, NP Hylton, T Wilson, ...
Solar Energy Materials and Solar Cells 172, 238-243, 2017
482017
Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study
J Kopaczek, WM Linhart, M Baranowski, RD Richards, F Bastiman, ...
Semiconductor Science and Technology 30 (9), 094005, 2015
372015
Assessing the nature of the distribution of localised states in bulk GaAsBi
T Wilson, NP Hylton, Y Harada, P Pearce, D Alonso-Álvarez, A Mellor, ...
Scientific Reports 8 (1), 6457, 2018
352018
Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties
Ł Gelczuk, J Kopaczek, TBO Rockett, RD Richards, R Kudrawiec
Scientific Reports 7 (1), 12824, 2017
342017
Absorption properties of GaAsBi based p–i–n heterojunction diodes
Z Zhou, DF Mendes, RD Richards, F Bastiman, JPR David
Semiconductor Science and Technology 30 (9), 094004, 2015
292015
Formation of tetragonal InBi clusters in InAsBi/InAs (100) heterostructures grown by molecular beam epitaxy
L Dominguez, DF Reyes, F Bastiman, DL Sales, RD Richards, D Mendes, ...
Applied Physics Express 6 (11), 112601, 2013
292013
Telecommunication wavelength GaAsBi light emitting diodes
RD Richards, CJ Hunter, F Bastiman, AR Mohmad, JPR David
IET Optoelectronics 10 (2), 34-38, 2016
282016
MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization
RD Richards, F Bastiman, JS Roberts, R Beanland, D Walker, JPR David
Journal of Crystal Growth 425, 237-240, 2015
252015
Influence of growth conditions on the structural and opto-electronic quality of GaAsBi
TBO Rockett, RD Richards, Y Gu, F Harun, Y Liu, Z Zhou, JPR David
Journal of Crystal Growth 477, 139-143, 2017
242017
Valence band engineering of GaAsBi for low noise avalanche photodiodes
Y Liu, X Yi, NJ Bailey, Z Zhou, TBO Rockett, LW Lim, CH Tan, ...
Nature communications 12 (1), 4784, 2021
232021
Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures
AR Mohmad, F Bastiman, CJ Hunter, F Harun, DF Reyes, DL Sales, ...
Semiconductor Science and Technology 30 (9), 094018, 2015
222015
Growth and structural characterization of GaAsBi/GaAs multiple quantum wells
RD Richards, F Bastiman, D Walker, R Beanland, JPR David
Semiconductor Science and Technology 30 (9), 094013, 2015
172015
Analysis of Bi distribution in epitaxial GaAsBi by aberration-corrected HAADF-STEM
N Baladés, DL Sales, M Herrera, CH Tan, Y Liu, RD Richards, SI Molina
Nanoscale Research Letters 13, 1-8, 2018
162018
Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies
S Flores, DF Reyes, V Braza, RD Richards, F Bastiman, T Ben, ...
Applied Surface Science 485, 29-34, 2019
152019
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