| Epitaxial graphene on cubic SiC (111)/Si (111) substrate A Ouerghi, A Kahouli, D Lucot, M Portail, L Travers, J Gierak, J Penuelas, ... Applied physics letters 96 (19), 191910, 2010 | 132 | 2010 |
| Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide F Lafont, R Ribeiro-Palau, D Kazazis, A Michon, O Couturaud, C Consejo, ... Nature communications 6, 6806, 2015 | 106 | 2015 |
| Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition A Michon, S Vézian, A Ouerghi, M Zielinski, T Chassagne, M Portail Applied Physics Letters 97 (17), 171909, 2010 | 94 | 2010 |
| Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates. M Portail, M Zielinski, T Chassagne, S Roy, M Nemoz Journal of Applied Physics 105 (8), 083505, 2009 | 76 | 2009 |
| Evidence of electrical activity of extended defects in 3C–SiC grown on Si X Song, JF Michaud, F Cayrel, M Zielinski, M Portail, T Chassagne, ... Applied Physics Letters 96 (14), 142104, 2010 | 74 | 2010 |
| Strain and wafer curvature of 3C‐SiC films on silicon: influence of the growth conditions M Zielinski, S Ndiaye, T Chassagne, S Juillaguet, R Lewandowska, ... physica status solidi (a) 204 (4), 981-986, 2007 | 68 | 2007 |
| Effects of pressure, temperature, and hydrogen during graphene growth on SiC (0001) using propane-hydrogen chemical vapor deposition A Michon, S Vézian, E Roudon, D Lefebvre, M Zielinski, T Chassagne, ... Journal of Applied Physics 113 (20), 203501, 2013 | 58 | 2013 |
| AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si (111) Y Cordier, M Portail, S Chenot, O Tottereau, M Zielinski, T Chassagne Journal of Crystal Growth 310 (20), 4417-4423, 2008 | 56 | 2008 |
| Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor M Zielinski, M Portail, T Chassagne, S Juillaguet, H Peyre Journal of Crystal Growth 310 (13), 3174-3182, 2008 | 54 | 2008 |
| Stress relaxation during the growth of thin films M Zielinski, A Leycuras, S Ndiaye, T Chassagne Applied physics letters 89 (13), 131906, 2006 | 52 | 2006 |
| Exchange interactions and magnetism of in Te M Zielinski, C Rigaux, A Lemaître, A Mycielski, J Deportes Physical Review B 53 (2), 674, 1996 | 50 | 1996 |
| Application of LTPL Investigation Methods to CVD‐Grown SiC J Camassel, S Juillaguet, M Zielinski, C Balloud Chemical Vapor Deposition 12 (8‐9), 549-556, 2006 | 47 | 2006 |
| Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC M Portail, A Michon, S Vézian, D Lefebvre, S Chenot, E Roudon, ... Journal of Crystal Growth 349 (1), 27-35, 2012 | 37 | 2012 |
| Elaboration of (1 1 1) oriented 3C–SiC/Si layers for template application in nitride epitaxy M Zielinski, M Portail, S Roy, T Chassagne, C Moisson, S Kret, Y Cordier Materials Science and Engineering: B 165 (1-2), 9-14, 2009 | 34 | 2009 |
| Transmission electron microscopy investigation of microtwins and double positioning domains in (111) -SiC in relation with the carbonization conditions S Roy, M Portail, T Chassagne, JM Chauveau, P Vennéguès, M Zielinski Applied Physics Letters 95 (8), 081903, 2009 | 32 | 2009 |
| Electrical transport properties of p‐type 4H‐SiC S Contreras, L Konczewicz, R Arvinte, H Peyre, T Chassagne, M Zielinski, ... physica status solidi (a) 214 (4), 2017 | 26 | 2017 |
| Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon M Zielinski, JF Michaud, S Jiao, T Chassagne, AE Bazin, A Michon, ... Journal of Applied Physics 111 (5), 053507, 2012 | 26 | 2012 |
| Rotated domain network in graphene on cubic-SiC (001) AN Chaika, OV Molodtsova, AA Zakharov, D Marchenko, ... Nanotechnology 25 (13), 135605, 2014 | 24 | 2014 |
| Extremely deep SIMS profiling: oxygen in FZ silicon A Barcz, M Zielinski, E Nossarzewska, G Lindstroem Applied surface science 203, 396-399, 2003 | 22 | 2003 |
| Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy R Boubekri, E Cambril, L Couraud, L Bernardi, A Madouri, M Portail, ... Journal of Applied Physics 116 (5), 054304, 2014 | 21 | 2014 |
Thierry ChassagneALMAE TECHNOLOGIESVerified email at almae-technologies.com
