Segui
Wai-Ning Mei
Wai-Ning Mei
Email verificata su unomaha.edu
Titolo
Citata da
Citata da
Anno
Large dielectric constant and Maxwell-Wagner relaxation in
J Liu, CG Duan, WG Yin, WN Mei, RW Smith, JR Hardy
Physical review B 70 (14), 144106, 2004
5862004
Defect engineering in cubic cerium oxide nanostructures for catalytic oxidation
NJ Lawrence, JR Brewer, L Wang, TS Wu, J Wells-Kingsbury, MM Ihrig, ...
Nano letters 11 (7), 2666-2671, 2011
3822011
MoS 2/MX 2 heterobilayers: bandgap engineering via tensile strain or external electrical field
N Lu, H Guo, L Li, J Dai, L Wang, WN Mei, X Wu, XC Zeng
Nanoscale 6 (5), 2879-2886, 2014
3772014
Dielectric properties and Maxwell-Wagner relaxation of compounds ACu3Ti4O12 (A= ca, Bi2∕ 3, Y2∕ 3, La2∕ 3)
J Liu, C Duan, WN Mei, RW Smith, JR Hardy
Journal of applied Physics 98 (9), 2005
3712005
Quasiparticle energies and excitonic effects of the two-dimensional carbon allotrope graphdiyne: Theory and experiment
G Luo, X Qian, H Liu, R Qin, J Zhou, L Li, Z Gao, E Wang, WN Mei, J Lu, ...
Physical Review B 84 (7), 075439, 2011
3512011
Dielectric permittivity and electric modulus in
J Liu, CG Duan, WG Yin, WN Mei, RW Smith, JR Hardy
The Journal of chemical physics 119 (5), 2812-2819, 2003
2942003
Electronic, magnetic and transport properties of rare-earth monopnictides
CG Duan, RF Sabirianov, WN Mei, PA Dowben, SS Jaswal, EY Tsymbal
Journal of Physics: Condensed Matter 19 (31), 315220, 2007
2502007
Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride
R Quhe, J Zheng, G Luo, Q Liu, R Qin, J Zhou, D Yu, S Nagase, WN Mei, ...
NPG Asia Materials 4 (2), e6-e6, 2012
2242012
Interface effect on ferroelectricity at the nanoscale
CG Duan, RF Sabirianov, WN Mei, SS Jaswal, EY Tsymbal
Nano letters 6 (3), 483-487, 2006
2212006
Selective interaction of large or charge-transfer aromatic molecules with metallic single-wall carbon nanotubes: critical role of the molecular size and orientation
J Lu, S Nagase, X Zhang, D Wang, M Ni, Y Maeda, T Wakahara, ...
Journal of the American Chemical Society 128 (15), 5114-5118, 2006
1912006
Strain induced half-metal to semiconductor transition in GdN
C Duan, RF Sabiryanov, J Liu, WN Mei, PA Dowben, JR Hardy
Physical review letters 94 (23), 237201, 2005
1792005
Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface
CG Duan, JP Velev, RF Sabirianov, WN Mei, SS Jaswal, EY Tsymbal
Applied Physics Letters 92 (12), 2008
1742008
Sub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation
J Zheng, L Wang, R Quhe, Q Liu, H Li, D Yu, WN Mei, J Shi, Z Gao, J Lu
Scientific reports 3 (1), 1314, 2013
1582013
Novel one-dimensional organometallic half metals: vanadium-cyclopentadienyl, vanadium-cyclopentadienyl-benzene, and vanadium-anthracene wires
L Wang, Z Cai, J Wang, J Lu, G Luo, L Lai, J Zhou, R Qin, Z Gao, D Yu, ...
Nano letters 8 (11), 3640-3644, 2008
1392008
Synthesis of the Giant Dielectric Constant Material CaCu3Ti4O12 by Wet-Chemistry Methods
J Liu, RW Smith, WN Mei
Chemistry of Materials 19 (24), 6020-6024, 2007
1312007
CaCu3Ti4O12:  Low-Temperature Synthesis by Pyrolysis of an Organic Solution
J Liu, Y Sui, C Duan, WN Mei, RW Smith, JR Hardy
Chemistry of materials 18 (16), 3878-3882, 2006
1152006
Structural, electronic, and optical properties of bulk graphdiyne
G Luo, Q Zheng, WN Mei, J Lu, S Nagase
The Journal of Physical Chemistry C 117 (25), 13072-13079, 2013
1112013
Graphdiyne–metal contacts and graphdiyne transistors
Y Pan, Y Wang, L Wang, H Zhong, R Quhe, Z Ni, M Ye, WN Mei, J Shi, ...
Nanoscale 7 (5), 2116-2127, 2015
1082015
Magnetic properties of fully bare and half-bare boron nitride nanoribbons
L Lai, J Lu, L Wang, G Luo, J Zhou, R Qin, Z Gao, WN Mei
The Journal of Physical Chemistry C 113 (6), 2273-2276, 2009
1082009
Interfacial properties of bilayer and trilayer graphene on metal substrates
J Zheng, Y Wang, L Wang, R Quhe, Z Ni, WN Mei, Z Gao, D Yu, J Shi, J Lu
Scientific reports 3 (1), 2081, 2013
1022013
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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