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Haoran Li
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Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides
S Keller, H Li, M Laurent, Y Hu, N Pfaff, J Lu, DF Brown, NA Fichtenbaum, ...
Semiconductor Science and Technology 29 (11), 113001, 2014
2222014
Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs
B Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ...
IEEE Transactions on Electron Devices 65 (1), 45-50, 2017
1892017
N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHz
S Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ...
IEEE Electron Device Letters 38 (3), 359-362, 2017
1012017
W-band power performance of SiN-passivated N-polar GaN deep recess HEMTs
B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ...
IEEE Electron Device Letters 41 (3), 349-352, 2020
922020
880 V/MIS Gate Trench CAVET on Bulk GaN Substrates
D Ji, A Agarwal, H Li, W Li, S Keller, S Chowdhury
IEEE Electron Device Letters 39 (6), 863-865, 2018
862018
N-polar GaN HEMTs exhibiting record breakdown voltage over 2000 V and low dynamic on-resistance
OS Koksaldi, J Haller, H Li, B Romanczyk, M Guidry, S Wienecke, S Keller, ...
IEEE Electron Device Letters 39 (7), 1014-1017, 2018
832018
Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells
K Hestroffer, F Wu, H Li, C Lund, S Keller, JS Speck, UK Mishra
Semiconductor Science and Technology 30 (10), 105015, 2015
632015
N-polar deep recess MISHEMTs with record 2.9 W/mm at 94 GHz
S Wienecke, B Romanczyk, M Guidry, H Li, X Zheng, E Ahmadi, ...
IEEE Electron Device Letters 37 (6), 713-716, 2016
452016
N-polar GaN MIS-HEMTs on sapphire with high combination of power gain cutoff frequency and three-terminal breakdown voltage
X Zheng, M Guidry, H Li, E Ahmadi, K Hestroffer, B Romanczyk, ...
IEEE Electron Device Letters 37 (1), 77-80, 2015
432015
W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz
B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ...
2016 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2016
372016
Measurement of the hot electron mean free path and the momentum relaxation rate in GaN
DJ Suntrup, G Gupta, H Li, S Keller, UK Mishra
Applied Physics Letters 105 (26), 2014
352014
Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull
M Guidry, S Wienecke, B Romanczyk, H Li, X Zheng, E Ahmadi, ...
2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016
322016
Development of polycrystalline diamond compatible with the latest N-polar GaN mm-wave technology
M Malakoutian, C Ren, K Woo, H Li, S Chowdhury
Crystal Growth & Design 21 (5), 2624-2632, 2021
312021
Metalorganic chemical vapor deposition and characterization of (Al, Si) O dielectrics for GaN-based devices
SH Chan, M Tahhan, X Liu, D Bisi, C Gupta, O Koksaldi, H Li, T Mates, ...
Japanese Journal of Applied Physics 55 (2), 021501, 2016
302016
Observation of hot electron and impact ionization in N-polar GaN MIS-HEMTs
D Bisi, C De Santi, M Meneghini, S Wienecke, M Guidry, H Li, E Ahmadi, ...
IEEE Electron Device Letters 39 (7), 1007-1010, 2018
282018
High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion
X Zheng, H Li, E Ahmadi, K Hestroffer, M Guidry, B Romanczyk, ...
2016 Lester Eastman Conference (LEC), 42-45, 2016
282016
N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates
E Ahmadi, F Wu, H Li, SW Kaun, M Tahhan, K Hestroffer, S Keller, ...
Semiconductor Science and Technology 30 (5), 055012, 2015
282015
Interfacial Vacancies in /(,)/ Heterostructures
V Prozheeva, I Makkonen, H Li, S Keller, UK Mishra, F Tuomisto
Physical Review Applied 13 (4), 044034, 2020
272020
High performance N-polar GaN HEMTs with OIP3/Pdc∼12dB at 10GHz
A Arias, P Rowell, J Bergman, M Urteaga, K Shinohara, X Zheng, H Li, ...
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-3, 2017
262017
High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces
SH Chan, S Keller, M Tahhan, H Li, B Romanczyk, SP DenBaars, ...
Semiconductor Science and Technology 31 (6), 065008, 2016
262016
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