| SOI field-effect diode DRAM cell: Design and operation AZ Badwan, Z Chbili, Y Yang, AA Salman, Q Li, DE Ioannou IEEE electron device letters 34 (8), 1002-1004, 2013 | 61 | 2013 |
| A computational study of the electronic properties of one-dimensional armchair phosphorene nanotubes S Yu, H Zhu, K Eshun, A Arab, A Badwan, Q Li Journal of Applied Physics 118 (16), 2015 | 54 | 2015 |
| SOI FED-SRAM cell: Structure and operation AZ Badwan, Z Chbili, Q Li, DE Ioannou IEEE Transactions on Electron Devices 62 (9), 2865-2870, 2015 | 23 | 2015 |
| On the nature of the memory mechanism of gated-thyristor dynamic-RAM cells AZ Badwan, Q Li, DE Ioannou IEEE Journal of the Electron Devices Society 3 (6), 468-471, 2015 | 19 | 2015 |
| Physics and design of a SOI field-effect-diode memory cell DE Ioannou, Z Chbili, AZ Badwan, Q Li, Y Yang, AA Salman 2012 IEEE International SOI Conference (SOI), 1-2, 2012 | 4 | 2012 |
| On the T-RAM and FED-RAM memory mechanism AZ Badwan, Q Li, DE Ioannou 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2015 | 3 | 2015 |
| Physics and design of SOI FED based memory cells AZ Badwan George Mason University, 2016 | 1 | 2016 |
| Gate assisted Kelvin test structure to measure the electron and hole flows at the same nanowire contacts H Yuan, A Badwan, CA Richter, H Zhu, O Kirillov, DE Ioannou, Q Li Applied Physics Letters 105 (13), 2014 | 1 | 2014 |
| Field effect diode memory cell: physics and design AZ Badwan, Z Chbili, Y Yang, Q Li, DE Ioannou, AA Salman 2013 IEEE International Conference of Electron Devices and Solid-state …, 2013 | 1 | 2013 |
| Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications DE Ioannou, Z Chbili, B A. Z., Q Li, Y Yang Future Trends in Microelectronics: Frontiers and Innovations, 73-80, 2013 | | 2013 |
