Gunther Lippert
Gunther Lippert
materials research, Frankfurt (Oder) Germany
Email verificata su ihp-microelectronics.com
Titolo
Citata da
Citata da
Anno
A graphene-based hot electron transistor
S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ...
Nano letters 13 (4), 1435-1439, 2013
2292013
Suppressed diffusion of boron and carbon in carbon-rich silicon
H Rücker, B Heinemann, W Röpke, R Kurps, D Krüger, G Lippert, ...
Applied Physics Letters 73 (12), 1682-1684, 1998
1721998
Vertical Graphene Base Transistor
W Mehr, J Dabrowski, JC Scheytt, G Lippert, YH Xie, MC Lemme, ...
Electron Device Letters, IEEE 33 (5), 691-693, 2012
1672012
Surfactant-controlled solid phase epitaxy of germanium on silicon
HJ Osten, J Klatt, G Lippert, B Dietrich, E Bugiel
Physical review letters 69 (3), 450, 1992
1111992
Measurement of stress and relaxation in Si1−xGex layers by Raman line shift and x‐ray diffraction
B Dietrich, E Bugiel, J Klatt, G Lippert, T Morgenstern, HJ Osten, ...
Journal of applied physics 74 (5), 3177-3180, 1993
941993
Titanium-added praseodymium silicate high- layers on Si(001)
T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ...
Applied Physics Letters 87 (2), 022902, 2005
842005
On the single-chip implementation of a Hiperlan/2 and IEEE 802.11 a capable modem
E Grass, K Tittelbach-Helmrich, U Jagdhold, A Troya, G Lippert, O Kruger, ...
IEEE Personal Communications 8 (6), 48-57, 2001
822001
Observation of the formation of a carbon-rich surface layer in silicon
HJ Osten, M Methfessel, G Lippert, H Rücker
Physical Review B 52 (16), 12179, 1995
731995
Direct graphene growth on insulator
G Lippert, J Dabrowski, M Lemme, C Marcus, O Seifarth, G Lupina
physica status solidi (b) 248 (11), 2619-2622, 2011
712011
Surfactant‐mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te
HJ Osten, J Klatt, G Lippert, E Bugiel, S Higuchi
Journal of applied physics 74 (4), 2507-2511, 1993
681993
Graphene grown on Ge (0 0 1) from atomic source
G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, ...
Carbon 75, 104-112, 2014
652014
The influence of surfactants on growth modes in molecular‐beam epitaxy: the growth of germanium layers on Si (100)
HJ Osten, G Lippert, J Klatt
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992
631992
Structure and strain relaxation mechanisms of ultrathin epitaxial films on Si(111)
T Schroeder, TL Lee, L Libralesso, I Joumard, J Zegenhagen, P Zaumseil, ...
Journal of applied physics 97 (7), 074906, 2005
552005
First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics
C Wenger, J Dąbrowski, P Zaumseil, R Sorge, P Formanek, G Lippert, ...
Materials science in semiconductor processing 7 (4-6), 227-230, 2004
552004
The impact of supersaturated carbon on transient enhanced diffusion
H Rücker, B Heinemann, D Bolze, R Kurps, D Krüger, G Lippert, HJ Osten
Applied physics letters 74 (22), 3377-3379, 1999
541999
Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates
M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ...
ACS applied materials & interfaces 8 (49), 33786-33793, 2016
532016
Two‐dimensional lattice‐mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant
HJ Osten, J Klatt, G Lippert, E Bugiel, S Hinrich
Applied physics letters 60 (20), 2522-2524, 1992
521992
Thin high- dielectric layers on TiN for memory capacitor applications
G Lupina, G Kozłowski, J Dabrowski, C Wenger, P Dudek, P Zaumseil, ...
Applied Physics Letters 92 (6), 062906, 2008
512008
Effects of carbon on boron diffusion in SiGe: Principles and impact on bipolar devices
HJ Osten, B Heinemann, D Knoll, G Lippert, H Rücker
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
511998
The effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin
HJ Osten, G Lippert, D Knoll, R Barth, B Heinemann, H Rucker, P Schley
International Electron Devices Meeting. IEDM Technical Digest, 803-806, 1997
471997
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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