Baxter Moody
Baxter Moody
Senior Scientist, Adroit Materials Inc.
Email verificata su adroitmaterials.com - Home page
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Citata da
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Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ...
Journal of The Electrochemical Society 158 (5), H530, 2011
1322011
On the origin of the 265 nm absorption band in AlN bulk crystals
R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ...
Applied Physics Letters 100 (19), 191914, 2012
1302012
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ...
Applied Physics Letters 102 (17), 171102, 2013
1172013
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (12), 122101, 2012
1162012
Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
T Kinoshita, T Obata, T Nagashima, H Yanagi, B Moody, S Mita, S Inoue, ...
Applied Physics Express 6 (9), 092103, 2013
1112013
Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport
Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (5), 055504, 2012
1092012
Optically pumped UV lasers grown on bulk AlN substrates
T Wunderer, CL Chua, JE Northrup, Z Yang, NM Johnson, M Kneissl, ...
physica status solidi (c) 9 (3‐4), 822-825, 2012
792012
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ...
Applied Physics Letters 103 (16), 161901, 2013
772013
Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells
ME Aumer, SF LeBoeuf, BF Moody, SM Bedair
Applied Physics Letters 79 (23), 3803-3805, 2001
642001
Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures
PT Barletta, E Acar Berkman, BF Moody, NA El-Masry, AM Emara, ...
Applied physics letters 90 (15), 151109, 2007
612007
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ...
Applied Physics Letters 104 (20), 202106, 2014
592014
Characterization of dislocation arrays in AlN single crystals grown by PVT
R Dalmau, B Moody, J Xie, R Collazo, Z Sitar
physica status solidi (a) 208 (7), 1545-1547, 2011
402011
Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures
ME Aumer, SF LeBoeuf, BF Moody, SM Bedair, K Nam, JY Lin, HX Jiang
Applied physics letters 80 (17), 3099-3101, 2002
372002
226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
D Liu, SJ Cho, J Park, J Gong, JH Seo, R Dalmau, D Zhao, K Kim, M Kim, ...
Applied Physics Letters 113 (1), 011111, 2018
302018
229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection
D Liu, SJ Cho, J Park, JH Seo, R Dalmau, D Zhao, K Kim, J Gong, M Kim, ...
Applied Physics Letters 112 (8), 081101, 2018
252018
Low defect density bulk AlN substrates for high performance electronics and optoelectronics
B Raghothamachar, R Dalmau, B Moody, HS Craft, R Schlesser, JQ Xie, ...
Materials Science Forum 717, 1287-1290, 2012
242012
Characterization of threading dislocations in PVT-grown AlN substrates via X-ray topography and ray tracing simulation
T Zhou, B Raghothamachar, F Wu, R Dalmau, B Moody, S Craft, ...
Journal of electronic materials 43 (4), 838-842, 2014
232014
Polycrystalline aluminum nitride material and method of production thereof
B Moody, R Dalmau, D Henshall, R Schlesser
US Patent 9,321,647, 2016
202016
Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment
K Kim, JH Ryu, J Kim, SJ Cho, D Liu, J Park, IK Lee, B Moody, W Zhou, ...
ACS Applied Materials & Interfaces 9 (20), 17576-17585, 2017
172017
Effect of on nitrogen incorporation in the metalorganic chemical vapor deposition of
BF Moody, PT Barletta, NA El-Masry, JC Roberts, ME Aumer, SF LeBoeuf, ...
Applied physics letters 80 (14), 2475-2477, 2002
132002
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