| High-speed uni-traveling carrier photodiode for 2 μm wavelength application Y Chen, Z Xie, J Huang, Z Deng, B Chen Optica 6 (7), 884-889, 2019 | 81 | 2019 |
| Inverted Si: PbS colloidal quantum dot heterojunction-based infrared photodetector K Xu, X Xiao, W Zhou, X Jiang, Q Wei, H Chen, Z Deng, J Huang, B Chen, ... ACS applied materials & interfaces 12 (13), 15414-15421, 2020 | 55 | 2020 |
| Demonstration of InAs/InGaAs/GaAs quantum dots-in-a-well mid-wave infrared photodetectors grown on silicon substrate W Chen, Z Deng, D Guo, Y Chen, YI Mazur, Y Maidaniuk, M Benamara, ... Journal of Lightwave Technology 36 (13), 2572-2581, 2018 | 44 | 2018 |
| Recent advances in high speed photodetectors for eSWIR/MWIR/LWIR applications B Chen, Y Chen, Z Deng Photonics 8 (1), 14, 2021 | 37 | 2021 |
| High-speed mid-wave infrared interband cascade photodetector at room temperature Z Xie, J Huang, X Chai, Z Deng, Y Chen, Q Lu, Z Xu, J Chen, Y Zhou, ... Optics Express 28 (24), 36915-36923, 2020 | 37 | 2020 |
| High-speed mid-infrared interband cascade photodetector based on InAs/GaAsSb type-II superlattice Y Chen, X Chai, Z Xie, Z Deng, N Zhang, Y Zhou, Z Xu, J Chen, B Chen Journal of Lightwave Technology 38 (4), 939-945, 2019 | 35 | 2019 |
| Low frequency noise-dark current correlations in HgCdTe infrared photodetectors L Zhu, Z Deng, J Huang, H Guo, L Chen, C Lin, B Chen Optics Express 28 (16), 23660-23669, 2020 | 34 | 2020 |
| Sub-monolayer quantum dot quantum cascade mid-infrared photodetector J Huang, D Guo, W Chen, Z Deng, Y Bai, T Wu, Y Chen, H Liu, J Wu, ... Applied Physics Letters 111 (25), 2017 | 30 | 2017 |
| InP-based near infrared/extended-short wave infrared dual-band photodetector Z Xie, Z Deng, X Zou, B Chen IEEE Photonics Technology Letters 32 (16), 1003-1006, 2020 | 29 | 2020 |
| Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes Y Chen, X Zhao, J Huang, Z Deng, C Cao, Q Gong, B Chen Optics express 26 (26), 35034-35045, 2018 | 27 | 2018 |
| Midwave infrared quantum dot quantum cascade photodetector monolithically grown on silicon substrate J Huang, D Guo, Z Deng, W Chen, H Liu, J Wu, B Chen Journal of Lightwave Technology 36 (18), 4033-4038, 2018 | 27 | 2018 |
| Demonstration of Si based InAs/GaSb type-II superlattice pin photodetector Z Deng, D Guo, CG Burguete, Z Xie, J Huang, H Liu, J Wu, B Chen Infrared Physics & Technology 101, 133-137, 2019 | 22 | 2019 |
| Mid-wave infrared InAs/GaSb type-II superlattice photodetector with nBp design grown on GaAs substrate Z Deng, D Guo, J Huang, H Liu, J Wu, B Chen IEEE Journal of quantum electronics 55 (4), 1-5, 2019 | 20 | 2019 |
| Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott … ZC Su, JQ Ning, Z Deng, XH Wang, SJ Xu, RX Wang, SL Lu, JR Dong, ... Nanoscale 8 (13), 7113-7118, 2016 | 19 | 2016 |
| Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates C González Burguete, D Guo, P Jurczak, F Cui, M Tang, W Chen, Z Deng, ... IET Optoelectronics 12 (1), 2-4, 2018 | 18 | 2018 |
| Demonstration of a dual-band InAs/GaSb type-II superlattice infrared detector based on a single heterojunction diode X Hao, Y Teng, Y Zhao, Q Wu, X Li, J Liu, Y Chen, H Zhu, B Chen, Z Deng, ... IEEE Journal of Quantum Electronics 56 (2), 1-6, 2019 | 15 | 2019 |
| Low-frequency noise spectroscopy characterization of HgCdTe infrared detectors L Zhu, J Huang, Z Xie, Z Deng, L Chen, C Lin, B Chen IEEE Transactions on Electron Devices 67 (2), 547-551, 2020 | 13 | 2020 |
| Structural dependences of localization and recombination of photogenerated carriers in the top GaInP subcells of GaInP/GaAs double-junction tandem solar cells Z Deng, J Ning, Z Su, S Xu, Z Xing, R Wang, S Lu, J Dong, B Zhang, ... ACS Applied Materials & Interfaces 7 (1), 690-695, 2015 | 13 | 2015 |
| Polarized and non-polarized photoluminescence of GaInP 2 alloy with partial CuPt-type atomic ordering: ordered domains vs. disordered regions JQ Ning, SJ Xu, Z Deng, ZC Su Journal of Materials Chemistry C 2 (30), 6119-6124, 2014 | 13 | 2014 |
| Temperature-dependent characteristics of HgCdTe mid-wave infrared e-avalanche photodiode L Zhu, H Guo, Z Deng, L Yang, J Huang, D Yang, Z Zhou, C Shen, L Chen, ... IEEE Journal of Selected Topics in Quantum Electronics 28 (2: Optical …, 2021 | 11 | 2021 |
