| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1146 | 2018 |
| Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries M Farahmand, C Garetto, E Bellotti, KF Brennan, M Goano, E Ghillino, ... IEEE Transactions on electron devices 48 (3), 535-542, 2001 | 583 | 2001 |
| On the feasibility of p-type Ga2O3 A Kyrtsos, M Matsubara, E Bellotti Applied Physics Letters 112 (3), 2018 | 278 | 2018 |
| Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN IH Oğuzman, E Bellotti, KF Brennan, J Kolnı́k, R Wang, PP Ruden Journal of Applied Physics 81 (12), 7827-7834, 1997 | 260 | 1997 |
| Ensemble Monte Carlo study of electron transport in wurtzite InN E Bellotti, BK Doshi, KF Brennan, JD Albrecht, PP Ruden Journal of Applied Physics 85 (2), 916-923, 1999 | 223 | 1999 |
| Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN M Goano, E Bellotti, E Ghillino, G Ghione, KF Brennan Journal of Applied Physics 88 (11), 6467-6475, 2000 | 173 | 2000 |
| Migration mechanisms and diffusion barriers of vacancies in A Kyrtsos, M Matsubara, E Bellotti Physical Review B 95 (24), 245202, 2017 | 134 | 2017 |
| Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors E Bellotti, K Driscoll, TD Moustakas, R Paiella Journal of Applied Physics 105 (11), 2009 | 132 | 2009 |
| Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model F Bertazzi, M Moresco, E Bellotti Journal of Applied Physics 106 (6), 2009 | 130 | 2009 |
| Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys and M Goano, E Bellotti, E Ghillino, C Garetto, G Ghione, KF Brennan Journal of Applied Physics 88 (11), 6476-6482, 2000 | 121 | 2000 |
| Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures E Bellotti, K Driscoll, TD Moustakas, R Paiella Applied Physics Letters 92 (10), 2008 | 120 | 2008 |
| A numerical study of Auger recombination in bulk InGaN F Bertazzi, M Goano, E Bellotti Applied Physics Letters 97 (23), 2010 | 105 | 2010 |
| Numerical analysis of HgCdTe simultaneous two-color photovoltaic infrared detectors E Bellotti, D D'Orsogna IEEE Journal of Quantum Electronics 42 (4), 418-426, 2006 | 104 | 2006 |
| Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations M Goano, F Bertazzi, M Penna, E Bellotti Journal of Applied Physics 102 (8), 2007 | 99 | 2007 |
| A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies M Matsubara, E Bellotti Journal of Applied Physics 121 (19), 2017 | 96 | 2017 |
| Numerical analysis of indirect Auger transitions in InGaN F Bertazzi, M Goano, E Bellotti Applied Physics Letters 101 (1), 2012 | 89 | 2012 |
| Alloy scattering in AlGaN and InGaN: A numerical study E Bellotti, F Bertazzi, M Goano Journal of Applied Physics 101 (12), 2007 | 81 | 2007 |
| Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC E Bellotti, HE Nilsson, KF Brennan, PP Ruden, R Trew Journal of Applied Physics 87 (8), 3864-3871, 2000 | 75 | 2000 |
| Migration mechanisms and diffusion barriers of carbon and native point defects in GaN A Kyrtsos, M Matsubara, E Bellotti Physical Review B 93 (24), 245201, 2016 | 73 | 2016 |
| Monte Carlo study of high-field carrier transport in -SiC including band-to-band tunneling M Hjelm, HE Nilsson, A Martinez, KF Brennan, E Bellotti Journal of applied physics 93 (2), 1099-1107, 2003 | 72 | 2003 |
Michele GoanoProfessor of Electronics, Politecnico di Torino, Dipartimento di Elettronica e TelecomunicazioniVerified email at polito.it
