A SOI capacitor-less 1T-DRAM concept S Okhonin, M Nagoga, JM Sallese, P Fazan 2001 IEEE International SOI Conference. Proceedings (Cat. No. 01CH37207 …, 2001 | 218 | 2001 |

A capacitor-less 1T-DRAM cell S Okhonin, M Nagoga, JM Sallese, P Fazan IEEE Electron Device Letters 23 (2), 85-87, 2002 | 217 | 2002 |

Charge-based modeling of junctionless double-gate field-effect transistors JM Sallese, N Chevillon, C Lallement, B Iniguez, F Prégaldiny IEEE Transactions on Electron Devices 58 (8), 2628-2637, 2011 | 206 | 2011 |

A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism JM Sallese, F Krummenacher, F Prégaldiny, C Lallement, A Roy, C Enz Solid-State Electronics 49 (3), 485-489, 2005 | 195 | 2005 |

Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model JM Sallese, M Bucher, F Krummenacher, P Fazan Solid-State Electronics 47 (4), 677-683, 2003 | 110 | 2003 |

Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime F Jazaeri, L Barbut, A Koukab, JM Sallese Solid-State Electronics 82, 103-110, 2013 | 93 | 2013 |

A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET AS Roy, JM Sallese, CC Enz Solid-state electronics 50 (4), 687-693, 2006 | 78 | 2006 |

A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation JM Sallese, AS Porret Solid-State Electronics 44 (6), 887-894, 2000 | 69 | 2000 |

Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects B Diagne, F Prégaldiny, C Lallement, JM Sallese, F Krummenacher Solid-State Electronics 52 (1), 99-106, 2008 | 64 | 2008 |

A compact non-quasi-static extension of a charge-based MOS model AS Porret, JM Sallese, CC Enz IEEE Transactions on Electron Devices 48 (8), 1647-1654, 2001 | 60 | 2001 |

Capacitor-less 1-transistor DRAM P Fazan, S Okhonin, M DECLERCQ, M NAGOGA, JM SALLESE 2002 IEEE international SOI conference (Williamsburg VA, 7-10 October 2002 …, 2002 | 54 | 2002 |

Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation JM Sallese, M Bucher, C Lallement Solid-State Electronics 44 (6), 905-912, 2000 | 49 | 2000 |

Noise modeling methodologies in the presence of mobility degradation and their equivalence AS Roy, CC Enz, JM Sallese IEEE transactions on electron devices 53 (2), 348-355, 2006 | 46 | 2006 |

FCC-ee: the lepton collider A Abada, M Abbrescia, SS Abdussalam, I Abdyukhanov, JA Fernandez, ... The European Physical Journal Special Topics 228 (2), 261-623, 2019 | 43* | 2019 |

Hall effect sensors design, integration and behavior analysis MA Paun, JM Sallese, M Kayal Journal of Sensor and Actuator Networks 2 (1), 85-97, 2013 | 42 | 2013 |

Global modeling strategy of parasitic coupled currents induced by minority-carrier propagation in semiconductor substrates FL Conte, JM Sallese, M Pastre, F Krummenacher, M Kayal IEEE Transactions on Electron Devices 57 (1), 263-272, 2009 | 42 | 2009 |

Modeling and design space of junctionless symmetric DG MOSFETs with long channel F Jazaeri, L Barbut, JM Sallese IEEE transactions on electron devices 60 (7), 2120-2127, 2013 | 41 | 2013 |

Generalization of the concept of equivalent thickness and capacitance to multigate MOSFETs modeling N Chevillon, JM Sallese, C Lallement, F Prégaldiny, M Madec, J Sedlmeir, ... IEEE Transactions on Electron Devices 59 (1), 60-71, 2011 | 41 | 2011 |

FCC physics opportunities A Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, JA Fernandez, ... The European Physical Journal C 79 (6), 474, 2019 | 39 | 2019 |

The EKV 3.0 compact MOS transistor model: accounting for deep-submicron aspects M Bucher, C Enz, F Krummenacher, JM Sallese, C Lallement, AS Porret Proc. MSM Int. Conf., Nanotech 2002, 670-673, 2002 | 39 | 2002 |