Jean-Michel Sallese
Jean-Michel Sallese
Verified email at epfl.ch
TitleCited byYear
A SOI capacitor-less 1T-DRAM concept
S Okhonin, M Nagoga, JM Sallese, P Fazan
2001 IEEE International SOI Conference. Proceedings (Cat. No. 01CH37207 …, 2001
2182001
A capacitor-less 1T-DRAM cell
S Okhonin, M Nagoga, JM Sallese, P Fazan
IEEE Electron Device Letters 23 (2), 85-87, 2002
2172002
Charge-based modeling of junctionless double-gate field-effect transistors
JM Sallese, N Chevillon, C Lallement, B Iniguez, F Prégaldiny
IEEE Transactions on Electron Devices 58 (8), 2628-2637, 2011
2062011
A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism
JM Sallese, F Krummenacher, F Prégaldiny, C Lallement, A Roy, C Enz
Solid-State Electronics 49 (3), 485-489, 2005
1952005
Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model
JM Sallese, M Bucher, F Krummenacher, P Fazan
Solid-State Electronics 47 (4), 677-683, 2003
1102003
Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime
F Jazaeri, L Barbut, A Koukab, JM Sallese
Solid-State Electronics 82, 103-110, 2013
932013
A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET
AS Roy, JM Sallese, CC Enz
Solid-state electronics 50 (4), 687-693, 2006
782006
A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation
JM Sallese, AS Porret
Solid-State Electronics 44 (6), 887-894, 2000
692000
Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects
B Diagne, F Prégaldiny, C Lallement, JM Sallese, F Krummenacher
Solid-State Electronics 52 (1), 99-106, 2008
642008
A compact non-quasi-static extension of a charge-based MOS model
AS Porret, JM Sallese, CC Enz
IEEE Transactions on Electron Devices 48 (8), 1647-1654, 2001
602001
Capacitor-less 1-transistor DRAM
P Fazan, S Okhonin, M DECLERCQ, M NAGOGA, JM SALLESE
2002 IEEE international SOI conference (Williamsburg VA, 7-10 October 2002 …, 2002
542002
Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation
JM Sallese, M Bucher, C Lallement
Solid-State Electronics 44 (6), 905-912, 2000
492000
Noise modeling methodologies in the presence of mobility degradation and their equivalence
AS Roy, CC Enz, JM Sallese
IEEE transactions on electron devices 53 (2), 348-355, 2006
462006
FCC-ee: the lepton collider
A Abada, M Abbrescia, SS Abdussalam, I Abdyukhanov, JA Fernandez, ...
The European Physical Journal Special Topics 228 (2), 261-623, 2019
43*2019
Hall effect sensors design, integration and behavior analysis
MA Paun, JM Sallese, M Kayal
Journal of Sensor and Actuator Networks 2 (1), 85-97, 2013
422013
Global modeling strategy of parasitic coupled currents induced by minority-carrier propagation in semiconductor substrates
FL Conte, JM Sallese, M Pastre, F Krummenacher, M Kayal
IEEE Transactions on Electron Devices 57 (1), 263-272, 2009
422009
Modeling and design space of junctionless symmetric DG MOSFETs with long channel
F Jazaeri, L Barbut, JM Sallese
IEEE transactions on electron devices 60 (7), 2120-2127, 2013
412013
Generalization of the concept of equivalent thickness and capacitance to multigate MOSFETs modeling
N Chevillon, JM Sallese, C Lallement, F Prégaldiny, M Madec, J Sedlmeir, ...
IEEE Transactions on Electron Devices 59 (1), 60-71, 2011
412011
FCC physics opportunities
A Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, JA Fernandez, ...
The European Physical Journal C 79 (6), 474, 2019
392019
The EKV 3.0 compact MOS transistor model: accounting for deep-submicron aspects
M Bucher, C Enz, F Krummenacher, JM Sallese, C Lallement, AS Porret
Proc. MSM Int. Conf., Nanotech 2002, 670-673, 2002
392002
The system can't perform the operation now. Try again later.
Articles 1–20