Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x AS Saidov, DV Saparov, SN Usmonov, A Kutlimratov, JM Abdiev, ...
Advances in Condensed Matter Physics 2021, 1-8, 2021
27 * 2021 Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs) 1− x (ZnSe) x with Nanocrystals AS Saidov, SN Usmonov, DV Saparov
Advances in Materials Science and Engineering 2019, 2019
11 2019 Possibility of obtaining the (GaSb)1 − x (Si2 ) x films on silicon substrates by the method of liquid-phase epitaxy SN Usmonov, AS Saidov, AY Leyderman, D Saparov, KT Kholikov
Semiconductors 43, 1092-1097, 2009
11 2009 Spectral sensitivity of (Si2 )1 − x (CdS)x solid solutions AS Saidov, SN Usmonov, KT Kholikov, D Saparov
Technical Physics Letters 33, 853-855, 2007
10 2007 Synthesis and characterization of (Si2 )1−x −y (Ge2 ) x (GaAs) y continuous solid solutions AS Saidov, SN Usmonov, KT Kholikov, D Saparov
Technical Physics Letters 33, 701-703, 2007
10 2007 Pis’ ma v Zh AS Saidov, SN Usmonov, KT Kholikov, D Saparov
Tekhn. Fiz 33 (20), 5-10, 2007
9 2007 Kristallizatsiya sloev poluprovodnikovih tverdih rastvorov Ge lx Sn x iz jidkoy fazi AS Saidov, EA Koshchanov, AS Razzakov, DV Saparov, VA Risayeva
Uzbek physic journal, 16-17, 1997
5 1997 Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions AS Saidov, SN Usmonov, DV Saparov, AM Akhmedov
Applied Solar Energy 56 (3), 178-185, 2020
4 2020 Current-voltage characteristic of np-p+ structures based on a chromium-compensated silicon-germanium solid solution AS Saidov, AY Leǐderman, B Sapaev, SZ Karazhanov, DV Saparov
Semiconductors 30 (6), 550-551, 1996
4 1996 Growing the solid solution of molekular substitution (GaAs) 1-z (ZnSe) z AS Saidov, DV Saparov, SN Usmonov, KG Gaimnazarov, II Maripov
IOP Conference Series: Materials Science and Engineering 1181 (1), 012002, 2021
2 2021 Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si2 )1–x (GaP) x (0 ≤ x ≤ 1) solution DV Saparov, MS Saidov, AS Saidov
Applied Solar Energy 52, 236-237, 2016
2 2016 Growth and spectral sensitivity of p Si-n (Si2 )1−x (ZnSe) x structures AS Saidov, MS Saidov, SN Usmonov, KA Amonov, D Saparov
Applied Solar Energy 44, 144-145, 2008
2 2008 Growth and photosensitivity of p Si-n (GaSb)1 − x (Si2 ) x structures AS Saidov, MS Saidov, SN Usmonov, KT Kholikov, D Saparov
Applied Solar Energy 43, 183-185, 2007
2 2007 Growth and photosensitivity of an epitaxial C-doped Si layer AS Saidov, SN Usmonov, MS Saidov, D Saparov
Applied Solar Energy 41 (2), 80-82, 2005
2 2005 Growth of the varyzone solid solution (Ge2 )1-x (ZnSe)x AS Saidov, DV Saparov, AS Razzakov, VA Rysaeva, EA Koshchanov
Uzbekiston Respublikasi Fanlar Akademiyasining Maruzalari 12, 35-37, 1997
2 1997 Features of liquid-phase epitaxy of new solid solutions of (GaAs)2 ) AS Saidov, DV Saparov, SN Usmonov, AS Razzakov, M Kalanov
International Journal of Modern Physics B 37 (14), 2350132, 2023
1 2023 FEATURES OF LIQUID-PHASE EPITAXY OF (GaAs) 1-x (ZnSe) x SOLID SOLUTION FROM THE TIN SOLUTION-MELT AS Saidov, DV Saparov, SN Usmonov, KG Gaimnazarov, MK Sultanov
Bulletin of Gulistan State University 2021 (1), 7-14, 2021
1 2021 The spectral photosensitivity of pSi-n (GaSb){sub 1-xy}(Si {sub 2}){sub x}(GaAs){sub y} structures; Spektral'naya fotochuvstvitel'nost'pSi-n (GaSb){sub 1-xy}(Si {sub 2}){sub x … MS Saidov, SN Usmonov, DV Saparov, KG Gaimnazarov
1 2010 Photosensitivity of p Si-n (GaSb) 1− x− y (Si 2) x (GaAs) y, p Si-n (GaSb) 1− x− y (Si 2) x (GaAs) y,-n (GaSb) structures AS Saidov, MS Saidov, SN Usmonov, D Saparov, KT Kholikov
Applied Solar Energy 44, 188-189, 2008
1 2008 Liquid phase epitaxy of (Sn2 )1−x (InSb)x solid solution layers AS Saidov, AS Razzakov, DV Saparov
Technical Physics Letters 28, 927-928, 2002
1 2002 