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Soohwan Jang
Soohwan Jang
Verified email at dankook.ac.kr
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Year
High Breakdown Voltage (−201) -Ga2O3 Schottky Rectifiers
J Yang, S Ahn, F Ren, SJ Pearton, S Jang, A Kuramata
IEEE Electron Device Letters 38 (7), 906-909, 2017
1982017
High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata
Applied Physics Letters 110 (19), 2017
1922017
Suspended black phosphorus nanosheet gas sensors
G Lee, S Kim, S Jung, S Jang, J Kim
Sensors and Actuators B: Chemical 250, 569-573, 2017
1192017
Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors
G Yang, S Jang, F Ren, SJ Pearton, J Kim
ACS applied materials & interfaces 9 (46), 40471-40476, 2017
1152017
Ternary Pt− Fe− Co alloy electrocatalysts prepared by electrodeposition: elucidating the roles of Fe and Co in the oxygen reduction reaction
SJ Hwang, SJ Yoo, S Jang, TH Lim, SA Hong, SK Kim
The Journal of physical chemistry c 115 (5), 2483-2488, 2011
982011
Band alignment of Al2O3 with (− 201) β-Ga2O3
PH Carey IV, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata
Vacuum 142, 52-57, 2017
702017
A comparative study of wet etching and contacts on (2¯ 01) and (010) oriented β-Ga2O3
S Jang, S Jung, K Beers, J Yang, F Ren, A Kuramata, SJ Pearton, KH Baik
Journal of Alloys and Compounds 731, 118-125, 2018
662018
Studies of minority carrier diffusion length increase in p-type ZnO: Sb
O Lopatiuk-Tirpak, L Chernyak, FX Xiu, JL Liu, S Jang, F Ren, SJ Pearton, ...
Journal of applied physics 100 (8), 2006
642006
Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors
CY Chang, EA Douglas, J Kim, L Lu, CF Lo, BH Chu, DJ Cheney, BP Gila, ...
IEEE Transactions on Device and Materials reliability 11 (1), 187-193, 2011
632011
Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane
BS Kang, J Kim, S Jang, F Ren, JW Johnson, RJ Therrien, P Rajagopal, ...
Applied Physics Letters 86 (25), 2005
592005
Platinum-functionalized black phosphorus hydrogen sensors
G Lee, S Jung, S Jang, J Kim
Applied Physics Letters 110 (24), 2017
582017
Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au
PH Carey, J Yang, F Ren, DC Hays, SJ Pearton, S Jang, A Kuramata, ...
AIP Advances 7 (9), 2017
572017
Carrier concentration dependence of acceptor activation energy in p-type ZnO
O Lopatiuk-Tirpak, WV Schoenfeld, L Chernyak, FX Xiu, JL Liu, S Jang, ...
Applied physics letters 88 (20), 2006
552006
Band offsets in ITO/Ga2O3 heterostructures
PH Carey IV, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata
Applied Surface Science 422, 179-183, 2017
532017
Band alignment of atomic layer deposited SiO2 and HfSiO4 with β-Ga2O3
PH Carey, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata
Japanese Journal of Applied Physics 56 (7), 071101, 2017
492017
Band-edge electroluminescence from N+-implanted bulk ZnO
HT Wang, BS Kang, JJ Chen, T Anderson, S Jang, F Ren, HS Kim, YJ Li, ...
Applied physics letters 88 (10), 2006
492006
AlGaN/GaN high electron mobility transistor degradation under on-and off-state stress
EA Douglas, CY Chang, DJ Cheney, BP Gila, CF Lo, L Lu, R Holzworth, ...
Microelectronics Reliability 51 (2), 207-211, 2011
472011
Valence and conduction band offsets in AZO/Ga2O3 heterostructures
PH Carey IV, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata
Vacuum 141, 103-108, 2017
462017
Highly sensitive nonpolar a-plane GaN based hydrogen diode sensor with textured active area using photo-chemical etching
KH Baik, J Kim, S Jang
sensors and actuators B: chemical 238, 462-467, 2017
452017
Novel dielectrics for gate oxides and surface passivation on GaN
BP Gila, GT Thaler, AH Onstine, M Hlad, A Gerger, A Herrero, KK Allums, ...
Solid-state electronics 50 (6), 1016-1023, 2006
452006
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