Segui
Donghai Wu
Donghai Wu
Institute of Semiconductor, CAS
Email verificata su semi.ac.cn
Titolo
Citata da
Citata da
Anno
Room temperature continuous wave, monolithic tunable THz sources based on highly efficient mid-infrared quantum cascade lasers
Q Lu, D Wu, S Sengupta, S Slivken, M Razeghi
Scientific reports 6 (1), 23595, 2016
1352016
Recent progress of quantum cascade laser research from 3 to 12 μm at the Center for Quantum Devices
M Razeghi, W Zhou, S Slivken, QY Lu, D Wu, R McClintock
Applied optics 56 (31), H30-H44, 2017
752017
1.58 μm InGaAs quantum well laser on GaAs
I Tångring, HQ Ni, BP Wu, DH Wu, YH Xiong, SS Huang, ZC Niu, ...
Applied Physics Letters 91 (22), 2007
752007
Room temperature terahertz semiconductor frequency comb
Q Lu, F Wang, D Wu, S Slivken, M Razeghi
Nature communications 10 (1), 2403, 2019
702019
High-power, continuous-wave, phase-locked quantum cascade laser arrays emitting at 8 µm
W Zhou, QY Lu, DH Wu, S Slivken, M Razeghi
Optics express 27 (11), 15776-15785, 2019
682019
Monolithically, widely tunable quantum cascade lasers based on a heterogeneous active region design
W Zhou, N Bandyopadhyay, D Wu, R McClintock, M Razeghi
Scientific reports 6 (1), 25213, 2016
652016
Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice
D Wu, J Li, A Dehzangi, M Razeghi
AIP advances 10 (2), 2020
632020
GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy
ZC Niu, SY Zhang, HQ Ni, DH Wu, H Zhao, HL Peng, YQ Xu, SY Li, ZH He, ...
Applied Physics Letters 87 (23), 2005
512005
Low threshold current density 1.3 µm metamorphic InGaAs/GaAs quantum well laser diodes
D Wu, H Wang, B Wu, H Ni, S Huang, Y Xiong, P Wang, Q Han, Z Niu, ...
Electronics Letters 44 (7), 1, 2008
472008
High quantum efficiency mid-wavelength infrared type-II InAs/InAs1− xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition
D Wu, Q Durlin, A Dehzangi, Y Zhang, M Razeghi
Applied Physics Letters 114 (1), 2019
402019
Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor
A Dehzangi, R McClintock, A Haddadi, D Wu, R Chevallier, M Razeghi
Scientific reports 9 (1), 5003, 2019
372019
Shortwave quantum cascade laser frequency comb for multi-heterodyne spectroscopy
MR Q. Y. Lu, S. Manna, D. H. Wu, S. Slivken
Applied physics Letter 112 (14), 141104, 2018
372018
Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers
M Razeghi, A Dehzangi, D Wu, R McClintock, Y Zhang, Q Durlin, J Li, ...
Infrared Technology and Applications XLV 11002, 108-125, 2019
352019
Demonstration of long wavelength infrared Type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition
MR D. H. Wu, A. Dehzangi, Y. Y. Zhang
Applied physics Letter 112 (24), 241103, 2018
352018
High performance monolithic, broadly tunable mid-infrared quantum cascade lasers
W Zhou, D Wu, R McClintock, S Slivken, M Razeghi
Optica 4 (10), 1228-1231, 2017
352017
High power, low divergent, substrate emitting quantum cascade ring laser in continuous wave operation
DH Wu, M Razeghi
APL Materials 5 (3), 2017
342017
Room temperature quantum cascade lasers with 22% wall plug efficiency in continuous-wave operation
F Wang, S Slivken, DH Wu, M Razeghi
Optics Express 28 (12), 17532-17538, 2020
332020
High efficiency quantum cascade laser frequency comb
Q Lu, D Wu, S Slivken, M Razeghi
Scientific Reports 7 (1), 43806, 2017
332017
Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition
D Wu, A Dehzangi, M Razeghi
Applied Physics Letters 115 (6), 2019
312019
Extended short wavelength infrared heterojunction phototransistors based on type II superlattices
A Dehzangi, R McClintock, D Wu, A Haddadi, R Chevallier, M Razeghi
Applied Physics Letters 114 (19), 2019
302019
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–20