Segui
Mark Law
Mark Law
Email verificata su eng.ufl.edu
Titolo
Citata da
Citata da
Anno
Ion beams in silicon processing and characterization
E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ...
Journal of applied physics 81 (10), 6513-6561, 1997
3571997
Ionizing radiation damage effects on GaN devices
SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov
ECS Journal of solid state science and technology 5 (2), Q35, 2015
3292015
Self-consistent model of minority-carrier lifetime, diffusion length, and mobility
ME Law, E Solley, M Liang, DE Burk
IEEE Electron device letters 12 (8), 401-403, 1991
1431991
Continuum based modeling of silicon integrated circuit processing: An object oriented approach
ME Law, SM Cea
Computational Materials Science 12 (4), 289-308, 1998
1341998
Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon
YM Haddara, BT Folmer, ME Law, T Buyuklimanli
Applied Physics Letters 77 (13), 1976-1978, 2000
1192000
Verification of analytic point defect models using SUPREM-IV (dopant diffusion)
ME Law, RW Dutton
IEEE transactions on computer-aided design of integrated circuits and …, 1988
971988
The effect of impurities on diffusion and activation of ion implanted boron in silicon
LS Robertson, R Brindos, KS Jones, ME Law, DF Downey, S Falk, J Liu
MRS Online Proceedings Library (OPL) 610, B5. 8, 2000
952000
A Quantitative Model for ELDRS andDegradation Effects in Irradiated Oxides Based on First Principles Calculations
NL Rowsey, ME Law, RD Schrimpf, DM Fleetwood, BR Tuttle, ...
IEEE Transactions on Nuclear Science 58 (6), 2937-2944, 2011
812011
SUPREM-IV user’s manual
ME Law, CS Rafferty, RW Dutton
Standford University, 1988
761988
Effects of hydrostatic pressure on dopant diffusion in silicon
H Park, KS Jones, JA Slinkman, ME Law
Journal of applied physics 78 (6), 3664-3670, 1995
741995
Perspective on flipping circuits I
GJ Kim, EE Patrick, R Srivastava, ME Law
IEEE Transactions on Education 57 (3), 188-192, 2014
692014
ColdFlux superconducting EDA and TCAD tools project: Overview and progress
CJ Fourie, K Jackman, MM Botha, S Razmkhah, P Febvre, CL Ayala, Q Xu, ...
IEEE Transactions on Applied Superconductivity 29 (5), 1-7, 2019
672019
Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon
H Park, ME Law
Journal of applied physics 72 (8), 3431-3439, 1992
641992
Reliability studies of AlGaN/GaN high electron mobility transistors
DJ Cheney, EA Douglas, L Liu, CF Lo, YY Xi, BP Gila, F Ren, D Horton, ...
Semiconductor Science and Technology 28 (7), 074019, 2013
632013
Diffusion of ion implanted boron in preamorphized silicon
KS Jones, LH Zhang, V Krishnamoorthy, M Law, DS Simons, P Chi, ...
Applied physics letters 68 (19), 2672-2674, 1996
631996
Stressed multidirectional solid-phase epitaxial growth of Si
NG Rudawski, KS Jones, S Morarka, ME Law, RG Elliman
Journal of Applied Physics 105 (8), 2009
602009
Fluorine-enhanced boron diffusion in amorphous silicon
JM Jacques, LS Robertson, KS Jones, ME Law, M Rendon, J Bennett
Applied physics letters 82 (20), 3469-3471, 2003
542003
Simulation of oxide trapping noise in submicron n-channel MOSFETs
FC Hou, G Bosman, ME Law
IEEE Transactions on Electron Devices 50 (3), 846-852, 2003
512003
Diffusion of implanted nitrogen in silicon
L Shaik Adam, ME Law, KS Jones, O Dokumaci, CS Murthy, S Hegde
Journal of Applied Physics 87 (5), 2282-2284, 2000
502000
The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing
DR Hughart, RD Schrimpf, DM Fleetwood, NL Rowsey, ME Law, BR Tuttle, ...
IEEE Transactions on Nuclear Science 59 (6), 3087-3092, 2012
492012
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–20