Marilena Vivona
Marilena Vivona
Staff Member, Institute for Microelectronics and Microsystems (IMM), CNR, Italy
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Recent advances on dielectrics technology for SiC and GaN power devices
F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ...
Applied Surface Science 301, 9-18, 2014
Radiation hardening techniques for Er/Yb doped optical fibers and amplifiers for space application
S Girard, M Vivona, A Laurent, B Cadier, C Marcandella, T Robin, ...
Optics express 20 (8), 8457-8465, 2012
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte
Applied Physics Letters 103 (15), 153508, 2013
Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC
M Vivona, G Greco, F Giannazzo, RL Nigro, S Rascunà, M Saggio, ...
Semiconductor Science and Technology 29 (7), 075018, 2014
Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3
P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, ...
Applied Physics A 115 (1), 333-339, 2014
Design of radiation-hardened rare-earth doped amplifiers through a coupled experiment/simulation approach
S Girard, L Mescia, M Vivona, A Laurent, Y Ouerdane, C Marcandella, ...
Journal of Lightwave Technology 31 (8), 1247-1254, 2013
Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements
P Fiorenza, A La Magna, M Vivona, F Roccaforte
Applied Physics Letters 109 (1), 012102, 2016
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
M Vivona, G Greco, R Lo Nigro, C Bongiorno, F Roccaforte
Journal of Applied Physics 118 (3), 035705, 2015
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC
M Vivona, G Greco, C Bongiorno, RL Nigro, S Scalese, F Roccaforte
Applied Surface Science 420, 331-335, 2017
Influence of Ce codoping and H2 pre-loading on Er/Yb-doped fiber: Radiation response characterized by Confocal Micro-Luminescence
M Vivona, S Girard, C Marcandella, T Robin, B Cadier, M Cannas, ...
Journal of Non-Crystalline Solids, 2010
Influence of Codoping on the Photoluminescence Excitation Channels of Phosphosilicate Yb/Er-Doped Glasses
M Vivona, S Girard, T Robin, B Cadier, L Vaccaro, M Cannas, ...
IEEE Photonics Technology Letters 24 (6), 509-511, 2012
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
P Fiorenza, M Vivona, F Iucolano, A Severino, S Lorenti, G Nicotra, ...
Materials Science in Semiconductor Processing 78, 38-42, 2018
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, ...
physica status solidi (a) 214 (4), 1600357, 2017
Characterization of SiO2/SiC interfaces annealed in N2O or POCl3
P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, S Lorenti, ...
Materials Science Forum 778, 623-626, 2014
Ge mediated surface preparation for twin free 3C-SiC nucleation and growth on low off-axis 4H-SiC substrate
K Alassaad, M Vivona, V Soulière, B Doisneau, F Cauwet, D Chaussende, ...
ECS Journal of Solid State Science and Technology 3 (8), P285, 2014
Metal/semiconductor contacts to Silicon Carbide: Physics and technology
F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Rascunà, ...
Materials Science Forum 924, 339-344, 2018
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices
P Fiorenza, G Greco, M Vivona, F Giannazzo, S Di Franco, A Frazzetto, ...
physica status solidi (a) 214 (4), 1600366, 2017
Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process
M Vivona, P Fiorenza, F Iucolano, A Severino, S Lorenti, F Roccaforte
Materials Science Forum 897, 331-334, 2017
Radiation effects on rare-earth doped optical fibers
S Girard, Y Ouerdane, M Vivona, B Tortech, T Robin, A Boukenter, ...
Nanophotonics and Macrophotonics for Space Environments IV 7817, 78170I, 2010
Electrical properties of SiO2/SiC interfaces on 2-off axis 4H-SiC epilayers
M Vivona, P Fiorenza, T Sledziewski, M Krieger, T Chassagne, M Zielinski, ...
Applied Surface Science 364, 892-895, 2016
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