1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2 O3 MOSFETs K Zeng, A Vaidya, U Singisetti
IEEE Electron Device Letters 39 (9), 1385-1388, 2018
213 2018 Field-Plated Lateral Ga2 O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage S Sharma, K Zeng, S Saha, U Singisetti
IEEE Electron Device Letters 41 (6), 836-839, 2020
195 2020 Ga2 O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology K Zeng, JS Wallace, C Heimburger, K Sasaki, A Kuramata, T Masui, ...
IEEE Electron Device Letters 38 (4), 513-516, 2017
140 2017 Device-Level thermal management of gallium oxide field-effect transistors B Chatterjee, K Zeng, CD Nordquist, U Singisetti, S Choi
IEEE Transactions on Components, Packaging and Manufacturing Technology 9 …, 2019
120 2019 Interface State Density in Atomic Layer Deposited SiO2 /2 O3 ( K Zeng, Y Jia, U Singisetti
IEEE Electron Device Letters 37 (7), 906-909, 2016
102 2016 Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2¯ 01) Y Jia, K Zeng, JS Wallace, JA Gardella, U Singisetti
Applied Physics Letters 106 (10), 2015
101 2015 A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm2 on-resistance K Zeng, A Vaidya, U Singisetti
Applied Physics Express 12 (8), 081003, 2019
81 2019 Flexible β‐Ga2 O3 Nanomembrane Schottky Barrier Diodes E Swinnich, MN Hasan, K Zeng, Y Dove, U Singisetti, B Mazumder, ...
Advanced Electronic Materials 5 (3), 1800714, 2019
64 2019 Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations K Zeng, U Singisetti
Applied Physics Letters 111 (12), 2017
46 2017 Designing Beveled Edge Termination in GaN Vertical pin Diode-Bevel Angle, Doping, and Passivation K Zeng, S Chowdhury
IEEE Transactions on Electron Devices 67 (6), 2457-2462, 2020
34 2020 Depletion and enhancement mode β-Ga 2 O 3 MOSFETs with ALD SiO 2 gate and near 400 V breakdown voltage K Zeng, K Sasaki, A Kuramata, T Masui, U Singisetti
74th Device Research Conference (DRC), 1-2, 2016
25 2016 2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer Z Bian, K Zeng, S Chowdhury
IEEE Electron Device Letters 43 (4), 596-599, 2022
24 2022 Vertical Ga2 O3 MOSFET With Magnesium Diffused Current Blocking Layer K Zeng, R Soman, Z Bian, S Jeong, S Chowdhury
IEEE Electron Device Letters 43 (9), 1527-1530, 2022
21 2022 A field-plated Ga₂O₃ MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm² on-resistance K Zeng, A Vaidya, U Singisetti
Appl. Phys. Exp. 12 (8), 2019
20 2019 Mixed-mode circuit simulation to characterize Ga2 O3 MOSFETs in different device structures I Lee, A Kumar, K Zeng, U Singisetti, X Yao
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
15 2017 Modeling and power loss evaluation of ultra wide band gap Ga2 O3 device for high power applications I Lee, A Kumar, K Zeng, U Singisetti, X Yao
Energy Conversion Congress and Exposition (ECCE), 2017 IEEE, 4377-4382, 2017
15 2017 Interface characterization of atomic layer deposited high-k on non-polar GaN Y Jia, K Zeng, U Singisetti
Journal of Applied Physics 122 (15), 2017
14 2017 Study on Avalanche Uniformity in 1.2 KV GaN Vertical PIN Diode with Bevel Edge-Termination K Zeng, S Chowdhury, B Gunning, R Kaplar, T Anderson
2021 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2021
12 2021 Development of High-Voltage Vertical GaN PN Diodes RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ...
2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020
9 2020 710 V Breakdown Voltage in Field Plated Ga203 MOSFET K Zeng, A Vaidya, U Singisetti
2018 76th Device Research Conference (DRC), 1-2, 2018
7 2018 
Uttam SingisettiProfessor, Electrical Engineering, Univeristy at Buffalo (SUNY)Email verificata su buffalo.edu
