Electron transport and full-band electron-phonon interactions in graphene A Akturk, N Goldsman
Journal of Applied Physics 103 (5), 2008
360 2008 Radiation effects in commercial 1200 V 24 A silicon carbide power MOSFETs A Akturk, JM McGarrity, S Potbhare, N Goldsman
IEEE Transactions on Nuclear Science 59 (6), 3258-3264, 2012
139 2012 Single event effects in Si and SiC power MOSFETs due to terrestrial neutrons A Akturk, R Wilkins, J McGarrity, B Gersey
IEEE Transactions on Nuclear Science 64 (1), 529-535, 2016
97 2016 Device modeling at cryogenic temperatures: Effects of incomplete ionization A Akturk, J Allnutt, Z Dilli, N Goldsman, M Peckerar
IEEE transactions on electron devices 54 (11), 2984-2990, 2007
90 2007 Electron transport and velocity oscillations in a carbon nanotube A Akturk, G Pennington, N Goldsman, A Wickenden
IEEE Transactions on Nanotechnology 6 (4), 469-474, 2007
90 2007 Reliability studies of SiC vertical power MOSFETs DJ Lichtenwalner, B Hull, E Van Brunt, S Sabri, DA Gajewski, D Grider, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-6, 2018
66 2018 Compact and distributed modeling of cryogenic bulk MOSFET operation A Akturk, M Holloway, S Potbhare, D Gundlach, B Li, N Goldsman, ...
IEEE Transactions on Electron Devices 57 (6), 1334-1342, 2010
59 2010 Reliability of SiC power devices against cosmic ray neutron single-event burnout DJ Lichtenwalner, A Akturk, J McGarrity, J Richmond, T Barbieri, B Hull, ...
Materials Science Forum 924, 559-562, 2018
55 2018 Self-consistent modeling of heating and MOSFET performance in 3-D integrated circuits A Akturk, N Goldsman, G Metze
IEEE Transactions on Electron Devices 52 (11), 2395-2403, 2005
53 2005 Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors G Pennington, N Goldsman, A Akturk, AE Wickenden
Applied Physics Letters 90 (6), 2007
51 2007 Characterization of Single-Photon Avalanche Diodes in a 0.5 m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression M Dandin, A Akturk, B Nouri, N Goldsman, P Abshire
IEEE Sensors Journal 10 (11), 1682-1690, 2010
50 2010 Quantum modeling and proposed designs of CNT-embedded nanoscale MOSFETs A Akturk, G Pennington, N Goldsman
IEEE transactions on electron devices 52 (4), 577-584, 2005
49 2005 Energy-and time-dependent dynamics of trap occupation in 4H-SiC MOSFETs S Potbhare, N Goldsman, A Akturk, M Gurfinkel, A Lelis, JS Suehle
IEEE Transactions on Electron Devices 55 (8), 2061-2070, 2008
47 2008 High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation A Akturk, N Goldsman, S Potbhare, A Lelis
Journal of Applied Physics 105 (3), 2009
45 2009 Terrestrial neutron-induced failures in silicon carbide power MOSFETs and diodes A Akturk, JM McGarrity, N Goldsman, D Lichtenwalner, B Hull, D Grider, ...
IEEE Transactions on Nuclear Science 65 (6), 1248-1254, 2018
43 2018 Use of thermally conductive vias to extract heat from microelectronic chips and method of manufacturing M Khbeis, G Metze, N Goldsman, A Akturk
US Patent 7,286,359, 2007
42 2007 Terahertz current oscillations in single-walled zigzag carbon nanotubes A Akturk, N Goldsman, G Pennington, A Wickenden
Physical review letters 98 (16), 166803, 2007
35 2007 Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces DP Ettisserry, N Goldsman, A Akturk, AJ Lelis
Journal of Applied Physics 116 (17), 2014
34 2014 Compact modeling of 0.35 μm SOI CMOS technology node for 4 K DC operation using Verilog-A A Akturk, M Peckerar, K Eng, J Hamlet, S Potbhare, E Longoria, R Young, ...
Microelectronic Engineering 87 (12), 2518-2524, 2010
33 2010 The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface S Salemi, N Goldsman, DP Ettisserry, A Akturk, A Lelis
Journal of Applied Physics 113 (5), 2013
31 2013