Adrian Ildefonso
Adrian Ildefonso
U.S. Naval Research Laboratory
Email verificata su gatech.edu - Home page
Titolo
Citata da
Citata da
Anno
Design and On-Wafer Characterization of G-Band SiGe HBT Low-Noise Amplifiers
CT Coen, A Ulusoy, P Song, A Ildefonso, M Kaynak, B Tillack, ...
IEEE Transactions on Microwave Theory and Techniques, 0
22*
Using TCAD modeling to compare heavy-ion and laser-induced single event transients in SiGe HBTs
ZE Fleetwood, NE Lourenco, A Ildefonso, JH Warner, MT Wachter, ...
IEEE Transactions on Nuclear Science 64 (1), 398-405, 2016
192016
The impact of technology scaling on the single-event transient response of SiGe HBTs
NE Lourenco, ZE Fleetwood, A Ildefonso, MT Wachter, NJH Roche, ...
IEEE Transactions on Nuclear Science 64 (1), 406-414, 2016
162016
Experimental validation of an equivalent LET approach for correlating heavy-ion and laser-induced charge deposition
JM Hales, A Khachatrian, S Buchner, NJH Roche, J Warner, ...
IEEE Transactions on Nuclear Science 65 (8), 1724-1733, 2018
142018
An investigation of single-event effect modeling techniques for a SiGe RF low-noise amplifier
NE Lourenco, S Zeinolabedinzadeh, A Ildefonso, ZE Fleetwood, CT Coen, ...
IEEE Transactions on Nuclear Science 63 (1), 273-280, 2016
122016
Optimizing optical parameters to facilitate correlation of laser-and heavy-ion-induced single-event transients in SiGe HBTs
A Ildefonso, ZE Fleetwood, GN Tzintzarov, JM Hales, D Nergui, ...
IEEE Transactions on Nuclear Science 66 (1), 359-367, 2018
82018
On the potential of using SiGe HBTs on SOI to support emerging applications up to 300 C
AP Omprakash, PS Chakraborty, H Ying, AS Cardoso, A Ildefonso, ...
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 27-30, 2015
82015
On the cryogenic RF linearity of SiGe HBTs in a fourth-generation 90-nm SiGe BiCMOS technology
AS Cardoso, AP Omprakash, PS Chakraborty, N Karaulac, ...
IEEE Transactions on Electron Devices 62 (4), 1127-1135, 2015
82015
Total ionizing dose effects in 70-GHz bandwidth photodiodes in a SiGe integrated photonics platform
PS Goley, GN Tzintzarov, S Zeinolabedinzadeh, A Ildefonso, K Motoki, ...
IEEE Transactions on Nuclear Science 66 (1), 125-133, 2018
72018
Single-event transient response of comparator pre-amplifiers in a complementary SiGe technology
A Ildefonso, NE Lourenco, ZE Fleetwood, MT Wachter, GN Tzintzarov, ...
IEEE Transactions on Nuclear Science 64 (1), 89-96, 2016
72016
SiGe HBT profiles with enhanced inverse-mode operation and their impact on single-event transients
ZE Fleetwood, A Ildefonso, GN Tzintzarov, B Wier, U Raghunathan, ...
IEEE Transactions on Nuclear Science 65 (1), 399-406, 2017
62017
On the application of inverse-mode SiGe HBTs in RF receivers for the mitigation of single-event transients
I Song, MK Cho, MA Oakley, A Ildefonso, I Ju, SP Buchner, D McMorrow, ...
IEEE Transactions on Nuclear Science 64 (5), 1142-1150, 2017
62017
Utilizing SiGe HBT power detectors for sensing single-event transients in RF circuits
A Ildefonso, CT Coen, ZE Fleetwood, GN Tzintzarov, MT Wachter, ...
IEEE Transactions on Nuclear Science 65 (1), 239-248, 2017
52017
Total ionizing dose effects on a high-voltage (> 30V) complementary SiGe on SOI technology
AP Omprakash, ZE Fleetwood, US Raghunathan, A Ildefonso, ...
IEEE Transactions on Nuclear Science 64 (1), 277-284, 2016
52016
Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics
JM Hales, A Khachatrian, J Warner, S Buchner, A Ildefonso, ...
Optics express 27 (26), 37652-37666, 2019
42019
DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures
H Ying, JW Teng, GN Tzintzarov, AP Omprakash, SG Rao, ...
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and…, 2019
42019
New approach for pulsed-laser testing that mimics heavy-ion charge deposition profiles
JM Hales, A Khachatrian, S Buchner, J Warner, A Ildefonso, ...
IEEE Transactions on Nuclear Science 67 (1), 81-90, 2019
42019
Single-event upset mitigation in a complementary SiGe HBT BiCMOS technology
NE Lourenco, A Ildefonso, GN Tzintzarov, ZE Fleetwood, K Motoki, P Paki, ...
IEEE Transactions on Nuclear Science 65 (1), 231-238, 2017
42017
The effects of total ionizing dose on the transient response of SiGe BiCMOS technologies
MT Wachter, A Ildefonso, ZE Fleetwood, NE Lourenco, G Tzintzarov, ...
2016 16th European Conference on Radiation and Its Effects on Components and…, 2016
32016
Modeling single-event transient propagation in a SiGe BiCMOS direct-conversion receiver
A Ildefonso, I Song, GN Tzintzarov, ZE Fleetwood, NE Lourenco, ...
2016 16th European Conference on Radiation and Its Effects on Components and…, 2016
32016
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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