| Design and On-Wafer Characterization of G-Band SiGe HBT Low-Noise Amplifiers CT Coen, AÇ Ulusoy, P Song, A Ildefonso, M Kaynak, B Tillack, ... IEEE Transactions on Microwave Theory and Techniques, 0 | 22* | |
| Using TCAD modeling to compare heavy-ion and laser-induced single event transients in SiGe HBTs ZE Fleetwood, NE Lourenco, A Ildefonso, JH Warner, MT Wachter, ... IEEE Transactions on Nuclear Science 64 (1), 398-405, 2016 | 19 | 2016 |
| The impact of technology scaling on the single-event transient response of SiGe HBTs NE Lourenco, ZE Fleetwood, A Ildefonso, MT Wachter, NJH Roche, ... IEEE Transactions on Nuclear Science 64 (1), 406-414, 2016 | 16 | 2016 |
| Experimental validation of an equivalent LET approach for correlating heavy-ion and laser-induced charge deposition JM Hales, A Khachatrian, S Buchner, NJH Roche, J Warner, ... IEEE Transactions on Nuclear Science 65 (8), 1724-1733, 2018 | 14 | 2018 |
| An investigation of single-event effect modeling techniques for a SiGe RF low-noise amplifier NE Lourenco, S Zeinolabedinzadeh, A Ildefonso, ZE Fleetwood, CT Coen, ... IEEE Transactions on Nuclear Science 63 (1), 273-280, 2016 | 12 | 2016 |
| Optimizing optical parameters to facilitate correlation of laser-and heavy-ion-induced single-event transients in SiGe HBTs A Ildefonso, ZE Fleetwood, GN Tzintzarov, JM Hales, D Nergui, ... IEEE Transactions on Nuclear Science 66 (1), 359-367, 2018 | 8 | 2018 |
| On the potential of using SiGe HBTs on SOI to support emerging applications up to 300° C AP Omprakash, PS Chakraborty, H Ying, AS Cardoso, A Ildefonso, ... 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 27-30, 2015 | 8 | 2015 |
| On the cryogenic RF linearity of SiGe HBTs in a fourth-generation 90-nm SiGe BiCMOS technology AS Cardoso, AP Omprakash, PS Chakraborty, N Karaulac, ... IEEE Transactions on Electron Devices 62 (4), 1127-1135, 2015 | 8 | 2015 |
| Total ionizing dose effects in 70-GHz bandwidth photodiodes in a SiGe integrated photonics platform PS Goley, GN Tzintzarov, S Zeinolabedinzadeh, A Ildefonso, K Motoki, ... IEEE Transactions on Nuclear Science 66 (1), 125-133, 2018 | 7 | 2018 |
| Single-event transient response of comparator pre-amplifiers in a complementary SiGe technology A Ildefonso, NE Lourenco, ZE Fleetwood, MT Wachter, GN Tzintzarov, ... IEEE Transactions on Nuclear Science 64 (1), 89-96, 2016 | 7 | 2016 |
| SiGe HBT profiles with enhanced inverse-mode operation and their impact on single-event transients ZE Fleetwood, A Ildefonso, GN Tzintzarov, B Wier, U Raghunathan, ... IEEE Transactions on Nuclear Science 65 (1), 399-406, 2017 | 6 | 2017 |
| On the application of inverse-mode SiGe HBTs in RF receivers for the mitigation of single-event transients I Song, MK Cho, MA Oakley, A Ildefonso, I Ju, SP Buchner, D McMorrow, ... IEEE Transactions on Nuclear Science 64 (5), 1142-1150, 2017 | 6 | 2017 |
| Utilizing SiGe HBT power detectors for sensing single-event transients in RF circuits A Ildefonso, CT Coen, ZE Fleetwood, GN Tzintzarov, MT Wachter, ... IEEE Transactions on Nuclear Science 65 (1), 239-248, 2017 | 5 | 2017 |
| Total ionizing dose effects on a high-voltage (> 30V) complementary SiGe on SOI technology AP Omprakash, ZE Fleetwood, US Raghunathan, A Ildefonso, ... IEEE Transactions on Nuclear Science 64 (1), 277-284, 2016 | 5 | 2016 |
| Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics JM Hales, A Khachatrian, J Warner, S Buchner, A Ildefonso, ... Optics express 27 (26), 37652-37666, 2019 | 4 | 2019 |
| DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures H Ying, JW Teng, GN Tzintzarov, AP Omprakash, SG Rao, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 4 | 2019 |
| New approach for pulsed-laser testing that mimics heavy-ion charge deposition profiles JM Hales, A Khachatrian, S Buchner, J Warner, A Ildefonso, ... IEEE Transactions on Nuclear Science 67 (1), 81-90, 2019 | 4 | 2019 |
| Single-event upset mitigation in a complementary SiGe HBT BiCMOS technology NE Lourenco, A Ildefonso, GN Tzintzarov, ZE Fleetwood, K Motoki, P Paki, ... IEEE Transactions on Nuclear Science 65 (1), 231-238, 2017 | 4 | 2017 |
| The effects of total ionizing dose on the transient response of SiGe BiCMOS technologies MT Wachter, A Ildefonso, ZE Fleetwood, NE Lourenco, G Tzintzarov, ... 2016 16th European Conference on Radiation and Its Effects on Components and …, 2016 | 3 | 2016 |
| Modeling single-event transient propagation in a SiGe BiCMOS direct-conversion receiver A Ildefonso, I Song, GN Tzintzarov, ZE Fleetwood, NE Lourenco, ... 2016 16th European Conference on Radiation and Its Effects on Components and …, 2016 | 3 | 2016 |
John D. CresslerProfessor of Electrical and Computer Engineering, Georgia TechEmail verificata su ece.gatech.edu
