| Deep levels characterization in GaN HEMTs—Part II: Experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy A Chini, F Soci, M Meneghini, G Meneghesso, E Zanoni IEEE transactions on electron devices 60 (10), 3176-3182, 2013 | 63 | 2013 |
| Boost-converter-based solar harvester for low power applications A Chini, F Soci Electronics letters 46 (4), 1, 2010 | 37 | 2010 |
| Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: Correlation with GaN buffer design D Bisi, A Chini, F Soci, A Stocco, M Meneghini, A Pantellini, A Nanni, ... IEEE Electron Device Letters 36 (10), 1011-1014, 2015 | 36 | 2015 |
| Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs A Chini, V Di Lecce, F Soci, D Bisi, A Stocco, M Meneghini, ... 2012 IEEE International Reliability Physics Symposium (IRPS), CD. 2.1-CD. 2.4, 2012 | 19 | 2012 |
| Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs D Bisi, A Stocco, I Rossetto, M Meneghini, F Rampazzo, A Chini, F Soci, ... Microelectronics Reliability 55 (9-10), 1662-1666, 2015 | 15 | 2015 |
| Traps localization and analysis in GaN HEMTs A Chini, F Soci, G Meneghesso, M Meneghini, E Zanoni Microelectronics Reliability 54 (9-10), 2222-2226, 2014 | 10 | 2014 |
| Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT F Iucolano, C Miccoli, M Nicotra, A Stocco, F Rampazzo, A Zanandrea, ... The 1st IEEE workshop on wide bandgap power devices and applications, 162-165, 2013 | 10 | 2013 |
| Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs A Chini, F Soci, F Fantini, A Nanni, A Pantellini, C Lanzieri, ... Microelectronics Reliability 53 (9-11), 1461-1465, 2013 | 10 | 2013 |
| Field plate related reliability improvements in GaN-on-Si HEMTs A Chini, F Soci, F Fantini, A Nanni, A Pantellini, C Lanzieri, D Bisi, ... Microelectronics Reliability 52 (9-10), 2153-2158, 2012 | 8 | 2012 |
| Influence of device self-heating on trap activation energy extraction F Soci, A Chini, G Meneghesso, M Meneghini, E Zanoni 2013 IEEE International Reliability Physics Symposium (IRPS), 3C. 6.1-3C. 6.6, 2013 | 6 | 2013 |
| Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors D Bisi, A Stocco, I Rossetto, M Meneghini, F Rampazzo, A Chini, F Soci, ... Proceedings of the 7th Wide Band Gap Semiconductor and Components Workshop, 2014 | 1 | 2014 |
| Tecniche di Caratterizzazione e di Analisi di GaN HEMTs per la Conversione Efficiente di Potenza. F SOCI | | 2015 |
| Effect of Gate Field-Plate Geometry on On-Resistance in AlGan/GaN HEMTs for Power Applications F Soci, G Pozzovivo, M Silvestri, G Curatola, T Detzel, O Haeberlen, ... HETECH 2014 Book of Abstracts, 2014 | | 2014 |
| Experimental Technique for Traps Spatial Localization in GaN HEMTs A Chini, F Soci, G Meneghesso, E Zanoni HETECH 2013 Book of Abstracts, 2013 | | 2013 |
| Threshold voltage shift investigation and oxide trap profile extraction in AlGaN/GaN MIS-HEMTs F Soci, P Tedaldi, F Iucolano, A Patti, G Meneghesso, E Zanoni, A Chini HETECH 2013 Book of Abstracts, 2013 | | 2013 |
| Traps characterization in AlGaN/GaN HEMTs by means of Drain Current Transient Measurements F Soci, A Chini, F Fantini, A Nanni, A Pantellini, C Lanzieri, D Bisi, ... 21th European workshop on Heterostructure Technology, HeTech 2012, 2012 | | 2012 |
| Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis D Bisi, A Stocco, F Rampazzo, M Meneghini, F Soci, A Chini, ... HETECH 2012 Book of Abstracts, 2012 | | 2012 |
| DC and Pulsed Characterization of GaN-based Single-and Double-Heterostructure Devices A Zanandrea, F Rampazzo, A Stocco, E Zanoni, D Bisi, F Soci, A Chini, ... 20th European Heterostructure Technology meeting (HeTech 2011), 2011 | | 2011 |
| Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors F Rampazzo, A Stocco, R Silvestri, M Meneghini, N Ronchi, D Bisi, F Soci, ... HETECH 2011 Book of Abstracts, 2011 | | 2011 |
