AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89% E Cicek, R McClintock, CY Cho, B Rahnema, M Razeghi Applied Physics Letters 103 (19), 191108, 2013 | 95 | 2013 |
Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111) CY Cho, Y Zhang, E Cicek, B Rahnema, Y Bai, R McClintock, M Razeghi Applied Physics Letters 102 (21), 211110, 2013 | 78 | 2013 |
Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates E Cicek, Z Vashaei, R McClintock, C Bayram, M Razeghi Applied Physics Letters 96 (26), 261107, 2010 | 61 | 2010 |
Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si (111) Y Zhang, S Gautier, CY Cho, E Cicek, Z Vashaei, R McClintock, C Bayram, ... Applied Physics Letters 102 (1), 011106, 2013 | 48 | 2013 |
GaN avalanche photodiodes grown on m-plane freestanding GaN substrate Z Vashaei, E Cicek, C Bayram, R McClintock, M Razeghi Applied Physics Letters 96 (20), 201908, 2010 | 46 | 2010 |
AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate E Cicek, R McClintock, CY Cho, B Rahnema, M Razeghi Applied Physics Letters 103 (18), 181113, 2013 | 33 | 2013 |
Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy E Cicek, R McClintock, Z Vashaei, Y Zhang, S Gautier, CY Cho, ... Applied Physics Letters 102 (5), 051102, 2013 | 33 | 2013 |
Al x Ga 1− x N–based deep-ultraviolet 320× 256 focal plane array E Cicek, Z Vashaei, EK Huang, R McClintock, M Razeghi Optics letters 37 (5), 896-898, 2012 | 31 | 2012 |
Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates E Cicek, Z Vashaei, C Bayram, R McClintock, M Razeghi, MP Ulmer Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon 7780, 77801P, 2010 | 10 | 2010 |
High Performance Solar-Blind Ultraviolet Focal Plane Arrays Based on AlxGa1-xN E Cicek, R McClintock, A Haddadi, WAG Rojas, M Razeghi IEEE Journal of Quantum Electronics 8 (50), 591-595, 2014 | 9 | 2014 |
III-nitride-based avalanche photo detectors R McClintock, E Cicek, Z Vashaei, C Bayram, M Razeghi, MP Ulmer Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon 7780, 77801B, 2010 | 8 | 2010 |
AlGaN-based deep-UV 320 x 256 FPA E Cicek, M Razeghi OSA Optics Letts 37 (5), 896, 2012 | 5 | 2012 |
Deep ultraviolet (254 nm) focal plane array E Cicek, Z Vashaei, R McClintock, M Razeghi Infrared Sensors, Devices, and Applications; and Single Photon Imaging II …, 2011 | 5 | 2011 |
Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices C Bayram, KT Shiu, Y Zhu, CW Cheng, DK Sadana, FH Teherani, ... Oxide-based Materials and Devices IV 8626, 86260L, 2013 | 4 | 2013 |
III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices M Razeghi, C Bayram, Z Vashaei, E Cicek, R McClintock 2010 23rd Annual Meeting of the IEEE Photonics Society, 351-352, 2010 | 2 | 2010 |
EECS Announcements E Cicek | | 2014 |
Solar-Blind Ultraviolet Photodetectors, Focal Plane Arrays, and Visible-Blind Avalanche Photodiodes E Cicek Northwestern University, 2014 | | 2014 |
Gallium nitride on silicon for consumer and scalable photonics C Bayram, KT Shiu, Y Zhu, CW Cheng, DK Sadana, Z Vashaei, E Cicek, ... Quantum Sensing and Nanophotonic Devices X 8631, 863112, 2013 | | 2013 |
Том. 8626. Oxide-Based Materials and Devices IV.-Сер. Oxide-Based Materials and Devices IV VE Sandana, P Bove, DJ Rogers, FH Teherani, M Razeghi, MS Allen, ... | | 2013 |
Temperature dependence of the dark current and activation energy at avalanche onset of a GaN avalanche photodiodes MP Ulmer, E Cicek, R McClintock, Z Vashaei, M Razeghi Biosensing and Nanomedicine V 8460, 84601G, 2012 | | 2012 |