Alan Seabaugh
Alan Seabaugh
Professor of Electrical Engineering, University of Notre Dame
Email verificata su nd.edu - Home page
Titolo
Citata da
Citata da
Anno
Electronics based on two-dimensional materials
G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ...
Nature nanotechnology 9 (10), 768-779, 2014
21692014
Low-voltage tunnel transistors for beyond CMOS logic
AC Seabaugh, Q Zhang
Proceedings of the IEEE 98 (12), 2095-2110, 2010
14902010
Low-subthreshold-swing tunnel transistors
Q Zhang, W Zhao, A Seabaugh
IEEE Electron Device Letters 27 (4), 297-300, 2006
6292006
Tunnel field-effect transistors: State-of-the-art
H Lu, A Seabaugh
IEEE Journal of the Electron Devices Society 2 (4), 44-49, 2014
4882014
Direct extraction of the electron tunneling effective mass in ultrathin SiO2
B Brar, GD Wilk, AC Seabaugh
Applied physics letters 69 (18), 2728-2730, 1996
3621996
Device and architecture outlook for beyond CMOS switches
K Bernstein, RK Cavin, W Porod, A Seabaugh, J Welser
Proceedings of the IEEE 98 (12), 2169-2184, 2010
3272010
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, H Xing, ...
Applied Physics Letters 104 (20), 203111, 2014
2822014
Graphene nanoribbon tunnel transistors
Q Zhang, T Fang, H Xing, A Seabaugh, D Jena
IEEE Electron Device Letters 29 (12), 1344-1346, 2008
2652008
A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter
TPE Broekaert, B Brar, JPA van der Wagt, AC Seabaugh, FJ Morris, ...
IEEE Journal of Solid-State Circuits 33 (9), 1342-1349, 1998
2511998
RTD/HFET low standby power SRAM gain cell
P van der Wage, A Seabaugh, E Beam
International Electron Devices Meeting. Technical Digest, 425-428, 1996
2511996
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
W Sik Hwang, M Remskar, R Yan, V Protasenko, K Tahy, S Doo Chae, ...
Applied Physics Letters 101 (1), 013107, 2012
2452012
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo
Nature communications 6 (1), 1-9, 2015
2362015
Nanomechanical switches and circuits
GA Frazier, AC Seabaugh
US Patent 6,548,841, 2003
2022003
Room temperature operation of epitaxially grown resonant interband tunneling diodes
SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ...
Applied Physics Letters 73 (15), 2191-2193, 1998
1991998
Novel gate-recessed vertical InAs/GaSb TFETs with record high IONof 180 μA/μm at VDS= 0.5 V
G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
1752012
Silicon oxide resonant tunneling diode structure
RM Wallace, AC Seabaugh
US Patent 5,606,177, 1997
1701997
Realization of a three‐terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor
MA Reed, WR Frensley, RJ Matyi, JN Randall, AC Seabaugh
Applied physics letters 54 (11), 1034-1036, 1989
1651989
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ...
Applied Physics Letters 101 (2), 022105, 2012
1602012
Nine-state resonant tunneling diode memory
AC Seabaugh, YC Kao, HT Yuan
IEEE Electron Device Letters 13 (9), 479-481, 1992
1591992
Exfoliated multilayer MoTe2 field-effect transistors
S Fathipour, N Ma, WS Hwang, V Protasenko, S Vishwanath, HG Xing, ...
Applied Physics Letters 105 (19), 192101, 2014
1462014
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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