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Edward K Swinnich
Edward K Swinnich
PhD Materials Design and Innovation, University at Buffalo
Email verificata su onsemi.com - Home page
Titolo
Citata da
Citata da
Anno
Flexible β‐Ga2O3 Nanomembrane Schottky Barrier Diodes
E Swinnich, MN Hasan, K Zeng, Y Dove, U Singisetti, B Mazumder, ...
Advanced Electronic Materials 5 (3), 1800714, 2019
632019
Flexible crystalline β-Ga 2 O 3 solar-blind photodetectors
J Lai, MN Hasan, E Swinnich, Z Tang, SH Shin, M Kim, P Zhang, JH Seo
Journal of Materials Chemistry C 8 (42), 14732-14739, 2020
432020
Low dimensional freestanding semiconductors for flexible optoelectronics: materials, synthesis, process, and applications
JH Seo, E Swinnich, YY Zhang, M Kim
Materials Research Letters 8 (4), 123-144, 2020
422020
Investigation of thermal properties of β-Ga2O3 nanomembranes on diamond heterostructure using raman thermometry
Y Zheng, E Swinnich, JH Seo
ECS Journal of Solid State Science and Technology 9 (5), 055007, 2020
292020
Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics
MN Hasan, E Swinnich, JH Seo
International Journal of High Speed Electronics and Systems 28 (01n02), 1940004, 2019
272019
Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs
SJ Cho, D Liu, A Hardy, J Kim, J Gong, CJ Herrera-Rodriguez, E Swinnich, ...
AIP Advances 10 (12), 2020
262020
Prediction of optical band gap of β-(AlxGa1-x) 2O3 using material informatics
E Swinnich, YJ Dave, EB Pitman, S Broderick, B Mazumder, JH Seo
Materials Discovery 11, 1-5, 2018
192018
Investigation of Nano-gaps in Fractured β-Ga2O3 Nanomembranes Formed by Uniaxial Strain
JHS M. N. Hasan, J. Lai, E. Swinnich, Y. Zheng, B. S. Baboukani, P. C. Nalam
Advanced Electronic Materials 7 (2), 2021
92021
Detecting the Oxidation of Zircaloy Claddings by Infrared Interference
H Mi, S Mikael, E Swinnich, T Allen, K Sridharan, DP Butt, S Gong, ...
Nano 13 (02), 1850015, 2018
52018
Influences of Native Oxide on the Properties of Ultrathin Al2O3‐Interfaced Si/GaAs Heterojunctions
MN Hasan, Y Zheng, J Lai, E Swinnich, OG Licata, MA Baboli, ...
Advanced Materials Interfaces 9 (13), 2101531, 2022
42022
Flexible Electronics: Investigation of Nano‐Gaps in Fractured β‐Ga2O3 Nanomembranes Formed by Uniaxial Strain (Adv. Electron. Mater. 2/2021)
MN Hasan, J Lai, E Swinnich, Y Zheng, BS Baboukani, PC Nalam, ...
Advanced Electronic Materials 7 (2), 2170006, 2021
22021
Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond np junction
D Liu, SJ Cho, A Hardy, J Kim, CJ Herrera-Rodriguez, E Swinnich, ...
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
22019
Investigation of the Imperfect Interface at the Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer
MN Hasan, Y Zheng, J Lai, E Swinnich, OG Licata, MA Baboli, ...
arXiv preprint arXiv:2110.12496, 2021
2021
Investigation of the Imperfect Interface at the Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer
M Nazmul Hasan, Y Zheng, J Lai, E Swinnich, OG Licata, MA Baboli, ...
arXiv e-prints, arXiv: 2110.12496, 2021
2021
Electrical and Thermal Property of Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer
MN Hasan, Y Zheng, J Lai, E Swinnich, OG Licata, MA Baboli, ...
arXiv preprint arXiv:2107.06983, 2021
2021
Electrical and Thermal Property of Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer
M Nazmul Hasan, Y Zheng, J Lai, E Swinnich, OG Licata, MA Baboli, ...
arXiv e-prints, arXiv: 2107.06983, 2021
2021
Heterogeneous Integration of Beta-Gallium Oxide and Diamond for High Power and Ultraviolet Electronic Applications
EK Swinnich
State University of New York at Buffalo, 2020
2020
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–17