Mathieu Pierre
Mathieu Pierre
Associate professor of Physics, INSA Toulouse and CNRS-LNCMI
Email verificata su lncmi.cnrs.fr
Titolo
Citata da
Citata da
Anno
Single-donor ionization energies in a nanoscale CMOS channel
M Pierre, R Wacquez, X Jehl, M Sanquer, M Vinet, O Cueto
Nature nanotechnology 5 (2), 133-137, 2010
2692010
Charged excitons in monolayer : Experiment and theory
E Courtade, M Semina, M Manca, MM Glazov, C Robert, F Cadiz, G Wang, ...
Physical Review B 96 (8), 085302, 2017
1532017
Storage and on-demand release of microwaves using superconducting resonators with tunable coupling
M Pierre, IM Svensson, S Raman Sathyamoorthy, G Johansson, ...
Applied Physics Letters 104 (23), 232604, 2014
632014
Background charges and quantum effects in quantum dots transport spectroscopy
M Pierre, M Hofheinz, X Jehl, M Sanquer, G Molas, M Vinet, S Deleonibus
The European Physical Journal B 70 (4), 475-481, 2009
522009
Compact silicon double and triple dots realized with only two gates
M Pierre, R Wacquez, B Roche, X Jehl, M Sanquer, M Vinet, E Prati, ...
Applied physics letters 95 (24), 242107, 2009
452009
Single-dopant resonance in a single-electron transistor
VN Golovach, X Jehl, M Houzet, M Pierre, B Roche, M Sanquer, ...
Physical Review B 83 (7), 075401, 2011
382011
High field magneto-transport in two-dimensional electron gas LaAlO3/SrTiO3
M Yang, K Han, O Torresin, M Pierre, S Zeng, Z Huang, TV Venkatesan, ...
Applied Physics Letters 109 (12), 122106, 2016
26*2016
Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect
M Yang, O Couturaud, W Desrat, C Consejo, D Kazazis, R Yakimova, ...
Physical review letters 117 (23), 237702, 2016
202016
Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm
R Wacquez, M Vinet, M Pierre, B Roche, X Jehl, O Cueto, J Verduijn, ...
2010 Symposium on VLSI Technology, 193-194, 2010
192010
Application of negative differential conductance in single-electron transistors for background charge characterization
HC George, M Pierre, X Jehl, AO Orlov, M Sanquer, GL Snider
Applied physics letters 96 (4), 042114, 2010
192010
Microwave photon generation in a doubly tunable superconducting resonator
IM Svensson, M Pierre, M Simoen, W Wustmann, P Krantz, A Bengtsson, ...
Journal of Physics: Conference Series 969 (1), 012146, 2018
102018
Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire
M Pierre, B Roche, R Wacquez, X Jehl, M Sanquer, M Vinet
Journal of Applied Physics 109 (8), 084346, 2011
82011
Resonant and off-resonant microwave signal manipulation in coupled superconducting resonators
M Pierre, SR Sathyamoorthy, IM Svensson, G Johansson, P Delsing
Physical Review B 99 (9), 094518, 2019
72019
Transport mono-électronique et détection de dopants uniques dans des transistors silicium
M Pierre
Université de Grenoble, 2010
62010
Patterning strategy for monoelectronic device platform in a complementary metal oxide semiconductor technology
S Pauliac-Vaujour, R Wacquez, C Vizioz, T Chevolleau, M Pierre, ...
Japanese Journal of Applied Physics 50 (6S), 06GF15, 2011
52011
FDSOI nanowires: An opportunity for hybrid circuit with field effect and single electron transistors
M Vinet, V Deshpande, X Jehl, R Wacquez, S Barraud, M Sanquer, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 26.4. 1-26.4. 4, 2013
32013
Dielectric confinement and fluctuations of the local density of state in the source and drain of an ultra scaled SOI NMOS transistor
M Pierre, B Roche, X Jehl, M Sanquer, R Wacquez, M Vinet, O Cueto, ...
2010 Silicon Nanoelectronics Workshop, 1-2, 2010
32010
Operation of a silicon CMOS electron pump
M Pierre, B Roche, X Jehl, R Wacquez, M Sanquer, M Vinet, N Feltin, ...
CPEM 2010, 755-756, 2010
22010
Sample variability and time stability in scaled silicon nanowires
M Pierre, X Jehl, R Wacquez, M Vinet, M Sanquer, M Belli, E Prati, ...
2009 10th International Conference on Ultimate Integration of Silicon, 249-252, 2009
22009
Low noise silicon CMOS single-electron transistors and electron pumps
M Pierre, X Jehl, M Sanquer, M Vinet, B Previtali, G Molas, S Deleonibus
2008 Conference on Precision Electromagnetic Measurements Digest, 282-283, 2008
22008
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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