| InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ... IEEE Electron Device Letters 33 (7), 988-990, 2012 | 418 | 2012 |
| Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ... IEEE Electron Device Letters 39 (6), 869-872, 2018 | 288 | 2018 |
| Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ of up to 0.95 GW/cm2 W Li, K Nomoto, Z Hu, D Jena, HG Xing IEEE Electron Device Letters 41 (1), 107-110, 2019 | 229 | 2019 |
| 1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ... IEEE Electron Device Letters 36 (4), 375-377, 2015 | 197 | 2015 |
| 1.7-kV and 0.55- GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability K Nomoto, B Song, Z Hu, M Zhu, M Qi, N Kaneda, T Mishima, T Nakamura, ... IEEE Electron Device Letters 37 (2), 161-164, 2015 | 191 | 2015 |
| Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN pn diodes with avalanche breakdown Z Hu, K Nomoto, B Song, M Zhu, M Qi, M Pan, X Gao, V Protasenko, ... Applied Physics Letters 107 (24), 2015 | 188 | 2015 |
| Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors Z Hu, K Nomoto, W Li, Z Zhang, N Tanen, QT Thieu, K Sasaki, A Kuramata, ... Applied Physics Letters 113 (12), 2018 | 158 | 2018 |
| 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of< 1 μA/cm2 W Li, Z Hu, K Nomoto, Z Zhang, JY Hsu, QT Thieu, K Sasaki, A Kuramata, ... Applied Physics Letters 113 (20), 2018 | 145 | 2018 |
| Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ... Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013 | 127 | 2013 |
| 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, TQ Tu, K Sasaki, A Kuramata, ... 2018 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2018 | 102 | 2018 |
| 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ... IEEE Electron device letters 32 (9), 1215-1217, 2011 | 95 | 2011 |
| Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV W Li, K Nomoto, Z Hu, T Nakamura, D Jena, HG Xing 2019 IEEE International Electron Devices Meeting (IEDM), 12.4. 1-12.4. 4, 2019 | 91 | 2019 |
| GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ... IEEE Electron Device Letters 41 (5), 689-692, 2020 | 86 | 2020 |
| Quaternary Barrier InAlGaN HEMTs With of 230/300 GHz R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ... IEEE electron device letters 34 (3), 378-380, 2013 | 78 | 2013 |
| 1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy Z Hu, K Nomoto, M Qi, W Li, M Zhu, X Gao, D Jena, HG Xing IEEE Electron Device Letters 38 (8), 1071-1074, 2017 | 75 | 2017 |
| GaN-on-GaN pn power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2 K Nomoto, Z Hu, B Song, M Zhu, M Qi, R Yan, V Protasenko, E Imhoff, ... 2015 IEEE international electron devices meeting (IEDM), 9.7. 1-9.7. 4, 2015 | 74 | 2015 |
| Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors S Ganguly, A Konar, Z Hu, H Xing, D Jena Applied Physics Letters 101 (25), 2012 | 71 | 2012 |
| Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes W Li, K Nomoto, Z Hu, D Jena, HG Xing Applied Physics Express 12 (6), 061007, 2019 | 70 | 2019 |
| High breakdown single-crystal GaN pn diodes by molecular beam epitaxy M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ... Applied Physics Letters 107 (23), 2015 | 66 | 2015 |
| Activation of buried p-GaN in MOCVD-regrown vertical structures W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, J Xie, M Pilla, ... Applied Physics Letters 113 (6), 2018 | 56 | 2018 |
Debdeep JenaCornell UniversityVerified email at cornell.edu
