Overview of atomic layer etching in the semiconductor industry KJ Kanarik, T Lill, EA Hudson, S Sriraman, S Tan, J Marks, V Vahedi, ...
Journal of Vacuum Science & Technology A 33 (2), 2015
597 2015 Mechanism of hydrogen-induced crystallization of amorphous silicon S Sriraman, S Agarwal, ES Aydil, D Maroudas
Nature 418 (6893), 62-65, 2002
479 2002 Coarse master equation from Bayesian analysis of replica molecular dynamics simulations S Sriraman, IG Kevrekidis, G Hummer
The Journal of Physical Chemistry B 109 (14), 6479-6484, 2005
154 2005 Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation S Sriraman, TA Kamp, A Paterson
US Patent 10,163,610, 2018
99 2018 Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions CM Huard, Y Zhang, S Sriraman, A Paterson, KJ Kanarik, MJ Kushner
Journal of Vacuum Science & Technology A 35 (3), 2017
84 2017 Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features CM Huard, Y Zhang, S Sriraman, A Paterson, MJ Kushner
Journal of Vacuum Science & Technology A 35 (5), 2017
65 2017 Coarse nonlinear dynamics and metastability of filling-emptying transitions: water in carbon nanotubes S Sriraman, IG Kevrekidis, G Hummer
Physical review letters 95 (13), 130603, 2005
65 2005 Investigation of feature orientation and consequences of ion tilting during plasma etching with a three-dimensional feature profile simulator Y Zhang, C Huard, S Sriraman, J Belen, A Paterson, MJ Kushner
Journal of Vacuum Science & Technology A 35 (2), 2017
64 2017 Multi-step method for etching strain gate recesses S Sriraman, L Braly
US Patent 7,303,999, 2007
63 2007 Hydrogen-induced crystallization of amorphous silicon thin films. I. Simulation and analysis of film postgrowth treatment with H2 plasmas S Sriraman, MS Valipa, ES Aydil, D Maroudas
Journal of Applied Physics 100 (5), 2006
56 2006 Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas CM Huard, S Sriraman, A Paterson, MJ Kushner
Journal of Vacuum Science & Technology A 36 (6), 2018
55 2018 Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation S Ramalingam, S Sriraman, ES Aydil, D Maroudas
Applied Physics Letters 78 (18), 2685-2687, 2001
51 2001 Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching S Sriraman, A Paterson
US Patent 9,053,908, 2015
49 2015 Control of ion energy and angular distributions in dual-frequency capacitively coupled plasmas through power ratios and phase: Consequences on etch profiles Y Zhang, MJ Kushner, S Sriraman, A Marakhtanov, J Holland, A Paterson
Journal of Vacuum Science & Technology A 33 (3), 2015
48 2015 Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si–Si bonds MS Valipa, S Sriraman, ES Aydil, D Maroudas
Journal of applied physics 100 (5), 2006
39 2006 Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework S Sriraman, R Wise, H Singh, A Paterson, AD Bailey III, V Vahedi, ...
US Patent 10,197,908, 2019
38 2019 Growth and characterization of hydrogenated amorphous silicon thin films from S Sriraman, ES Aydil, D Maroudas
Journal of applied physics 95 (4), 1792-1805, 2004
37 2004 Layout pattern proximity correction through fast edge placement error prediction J Mailfert, S Sriraman, MD Tetiker
US Patent 10,254,641, 2019
31 2019 Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamber Z Tan, Y Zhang, Q Fu, Q Xu, Y Wu, S Sriraman, A Paterson
US Patent 10,242,845, 2019
30 2019 Mechanism and activation energy barrier for H abstraction by H (D) from a-Si: H surfaces S Agarwal, S Sriraman, A Takano, MCM Van de Sanden, ES Aydil, ...
Surface science 515 (1), L469-L474, 2002
30 2002 
Dimitrios MaroudasProfessor of Chemical Engineering, University of Massachusetts AmherstEmail verificata su ecs.umass.edu
