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Saravanapriyan Sriraman
Saravanapriyan Sriraman
Lam Research Corporation
Email verificata su lamrc.com
Titolo
Citata da
Citata da
Anno
Mechanism of hydrogen-induced crystallization of amorphous silicon
S Sriraman, S Agarwal, ES Aydil, D Maroudas
Nature 418 (6893), 62-65, 2002
4572002
Overview of atomic layer etching in the semiconductor industry
KJ Kanarik, T Lill, EA Hudson, S Sriraman, S Tan, J Marks, V Vahedi, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 (2…, 2015
4342015
Coarse master equation from Bayesian analysis of replica molecular dynamics simulations
S Sriraman, IG Kevrekidis, G Hummer
The Journal of Physical Chemistry B 109 (14), 6479-6484, 2005
1422005
Multi-step method for etching strain gate recesses
S Sriraman, L Braly
US Patent 7,303,999, 2007
632007
Coarse nonlinear dynamics and metastability of filling-emptying transitions: water in carbon nanotubes
S Sriraman, IG Kevrekidis, G Hummer
Physical review letters 95 (13), 130603, 2005
622005
Hydrogen-induced crystallization of amorphous silicon thin films. I. Simulation and analysis of film postgrowth treatment with plasmas
S Sriraman, MS Valipa, ES Aydil, D Maroudas
Journal of Applied Physics 100 (5), 053514, 2006
542006
Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions
CM Huard, Y Zhang, S Sriraman, A Paterson, KJ Kanarik, MJ Kushner
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (3…, 2017
532017
Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
S Sriraman, TA Kamp, A Paterson
US Patent 10,163,610, 2018
512018
Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation
S Ramalingam, S Sriraman, ES Aydil, D Maroudas
Applied Physics Letters 78 (18), 2685-2687, 2001
472001
Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features
CM Huard, Y Zhang, S Sriraman, A Paterson, MJ Kushner
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (5…, 2017
452017
Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si–Si bonds
MS Valipa, S Sriraman, ES Aydil, D Maroudas
Journal of applied physics 100 (5), 053515, 2006
392006
Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas
CM Huard, S Sriraman, A Paterson, MJ Kushner
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36 (6…, 2018
372018
Growth and characterization of hydrogenated amorphous silicon thin films from radical precursor: Atomic-scale analysis
S Sriraman, ES Aydil, D Maroudas
Journal of applied physics 95 (4), 1792-1805, 2004
362004
Investigation of feature orientation and consequences of ion tilting during plasma etching with a three-dimensional feature profile simulator
Y Zhang, C Huard, S Sriraman, J Belen, A Paterson, MJ Kushner
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (2…, 2017
342017
Control of ion energy and angular distributions in dual-frequency capacitively coupled plasmas through power ratios and phase: Consequences on etch profiles
Y Zhang, MJ Kushner, S Sriraman, A Marakhtanov, J Holland, A Paterson
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 (3…, 2015
332015
Mechanism and activation energy barrier for H abstraction by H (D) from a-Si: H surfaces
S Agarwal, S Sriraman, A Takano, MCM Van de Sanden, ES Aydil, ...
Surface science 515 (1), L469-L474, 2002
302002
Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework
S Sriraman, R Wise, H Singh, A Paterson, AD Bailey III, V Vahedi, ...
US Patent 10,197,908, 2019
252019
Mechanisms and energetics of SiH3 adsorption on the pristine Si (0 0 1)-(2 1) surface
SP Walch, S Ramalingam, S Sriraman, ES Aydil, D Maroudas
Chemical physics letters 344 (3-4), 249-255, 2001
252001
Layout pattern proximity correction through fast edge placement error prediction
J Mailfert, S Sriraman, MD Tetiker
US Patent 10,254,641, 2019
212019
Internal plasma grid for semiconductor fabrication
A Paterson, H Singh, RA Marsh, T Lill, V Vahedi, Y Wu, S Sriraman
US Patent App. 14/082,009, 2014
192014
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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