| Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection BM Nguyen, S Bogdanov, SA Pour, M Razeghi Applied Physics Letters 95 (18), 183502, 2009 | 120 | 2009 |
| Material platforms for integrated quantum photonics S Bogdanov, MY Shalaginov, A Boltasseva, VM Shalaev Optical Materials Express 7 (1), 111-132, 2017 | 97 | 2017 |
| Ultrabright room-temperature sub-nanosecond emission from single nitrogen-vacancy centers coupled to nanopatch antennas SI Bogdanov, MY Shalaginov, AS Lagutchev, CC Chiang, D Shah, ... Nano letters 18 (8), 4837-4844, 2018 | 74 | 2018 |
| Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices M Razeghi, A Haddadi, AM Hoang, EK Huang, G Chen, S Bogdanov, ... Infrared Physics & Technology 59, 41-52, 2013 | 73 | 2013 |
| Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate BM Nguyen, D Hoffman, EK Huang, S Bogdanov, PY Delaunay, ... Applied Physics Letters 94 (22), 223506, 2009 | 70 | 2009 |
| Effect of contact doping in superlattice-based minority carrier unipolar detectors BM Nguyen, G Chen, AM Hoang, S Abdollahi Pour, S Bogdanov, ... Applied Physics Letters 99 (3), 033501, 2011 | 43 | 2011 |
| Hybrid plasmonic bullseye antennas for efficient photon collection SKH Andersen, S Bogdanov, O Makarova, Y Xuan, MY Shalaginov, ... Acs Photonics 5 (3), 692-698, 2018 | 38 | 2018 |
| Overcoming quantum decoherence with plasmonics SI Bogdanov, A Boltasseva, VM Shalaev Science 364 (6440), 532-533, 2019 | 34 | 2019 |
| Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes S Bogdanov, BM Nguyen, AM Hoang, M Razeghi Applied Physics Letters 98 (18), 183501, 2011 | 31 | 2011 |
| Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate SA Pour, BM Nguyen, S Bogdanov, EK Huang, M Razeghi Applied Physics Letters 95 (17), 173505, 2009 | 29* | 2009 |
| Antimonide-based type II superlattices: A superior candidate for the third generation of infrared imaging systems M Razeghi, A Haddadi, AM Hoang, G Chen, S Bogdanov, SR Darvish, ... Journal of electronic materials 43 (8), 2802-2807, 2014 | 23 | 2014 |
| Electron spin contrast of Purcell-enhanced nitrogen-vacancy ensembles in nanodiamonds S Bogdanov, MY Shalaginov, A Akimov, AS Lagutchev, P Kapitanova, ... Physical Review B 96, 035146, 2017 | 22 | 2017 |
| Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors G Chen, EK Huang, AM Hoang, S Bogdanov, SR Darvish, M Razeghi Applied Physics Letters 101 (21), 213501, 2012 | 22 | 2012 |
| High-operating temperature MWIR photon detectors based on Type II InAs/GaSb superlattice M Razeghi, SA Pour, E Huang, G Chen, A Haddadi, BM Nguyen Infrared Technology and Applications XXXVII 8012, 80122Q, 2011 | 19 | 2011 |
| Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement G Chen, AM Hoang, S Bogdanov, A Haddadi, PR Bijjam, BM Nguyen, ... Applied Physics Letters 103 (3), 033512, 2013 | 17 | 2013 |
| State-of-the-art Type II Antimonide-based superlattice photodiodes for infrared detection and imaging M Razeghi, BM Nguyen, PY Delaunay, EK Huang, SA Pour, P Manukar, ... Nanophotonics and Macrophotonics for Space Environments III 7467, 74670T, 2009 | 15 | 2009 |
| Ultrafast quantum photonics enabled by coupling plasmonic nanocavities to strongly radiative antennas SI Bogdanov, OA Makarova, X Xu, ZO Martin, AS Lagutchev, M Olinde, ... Optica 7 (5), 463-469, 2020 | 13 | 2020 |
| Rapid classification of quantum sources enabled by machine learning ZA Kudyshev, SI Bogdanov, T Isacsson, AV Kildishev, A Boltasseva, ... Advanced Quantum Technologies 3 (10), 2000067, 2020 | 12 | 2020 |
| High-operating-temperature MWIR photon detectors based on type II InAs/GaSb superlattice M Razeghi, BM Nguyen, PY Delaunay, SA Pour, EK Huang, P Manukar, ... Quantum Sensing and Nanophotonic Devices VII 7608, 76081Q, 2010 | 12 | 2010 |
| Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array G Chen, AM Hoang, S Bogdanov, A Haddadi, SR Darvish, M Razeghi Applied Physics Letters 103 (22), 223501, 2013 | 11 | 2013 |
Alexandra BoltassevaPurdue UniversityEmail verificata su purdue.edu
