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Kazuya Masu
Kazuya Masu
Verified email at m.titech.ac.jp - Homepage
Title
Cited by
Cited by
Year
New binary sequences with zero-correlation duration for approximately synchronised CDMA
JS Cha, S Kameda, M Yokoyama, H Nakase, K Masu, K Tsubouchi
Electronics Letters 36 (11), 1, 2000
1042000
Complete planarization of via holes with aluminum by selective and nonselective chemical vapor deposition
K Tsubouchi, K Masu, N Shigeeda, T Matano, Y Hiura, N Mikoshiba
Applied physics letters 57 (12), 1221-1223, 1990
1011990
Design of sub-1g microelectromechanical systems accelerometers
D Yamane, T Konishi, T Matsushima, K Machida, H Toshiyoshi, K Masu
Applied Physics Letters 104 (7), 2014
962014
A bidirectional-and multi-drop-transmission-line interconnect for multipoint-to-multipoint on-chip communications
H Ito, M Kimura, K Miyashita, T Ishii, K Okada, K Masu
IEEE Journal of Solid-State Circuits 43 (4), 1020-1029, 2008
802008
Selective aluminum chemical vapor deposition
K Tsubouchi, K Masu
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10 (4 …, 1992
791992
Process for thin film formation
K Tsubouchi, K Masu
US Patent 5,604,153, 1997
631997
Acceptor energy level for Zn in Ga1−xAlxAs
K Masu, M Konagai, K Takahashi
Journal of Applied Physics 51 (2), 1060-1064, 1980
551980
Process for forming deposited film
N Mikoshiba, T Ohmi, K Tsubouchi, K Masu, N Suzuki
US Patent 5,753,320, 1998
541998
On-chip variable inductor using microelectromechanical systems technology
Y Yokoyama, T Fukushige, S Hata, K Masu, A Shimokohbe
Japanese Journal of Applied Physics 42 (4S), 2190, 2003
522003
Pyrolysis and photolysis of trimethylaluminum
N Suzuki, C Anayama, K Masu, K Tsubouchi, N Mikoshiba
Japanese journal of applied physics 25 (8R), 1236, 1986
521986
On-Chip High-Variable Inductor Using Wafer-Level Chip-Scale Package Technology
K Okada, H Sugawara, H Ito, K Itoi, M Sato, H Abe, T Ito, K Masu
IEEE Transactions on Electron Devices 53 (9), 2401-2406, 2006
502006
Transmission electron microscopic observation of AlN/α-Al2O3 heteroepitaxial interface with initial-nitriding AlN layer
K Masu, Y Nakamura, T Yamazaki, T Shibata, M Takahashi, ...
Japanese journal of applied physics 34 (6B), L760, 1995
501995
On-chip transmission line for long global interconnects
H Ito, J Inoue, S Gomi, H Sugita, K Okada, K Masu
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
492004
13.8 A 5.8 GHz RF-powered transceiver with a 113μW 32-QAM transmitter employing the IF-based quadrature backscattering technique
A Shirane, H Tan, Y Fang, T Ibe, H Ito, N Ishihara, K Masu
2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015
462015
Modeling of spiral inductors
K Okada, K Masu
Advanced Microwave Circuits and Systems 4, 291-312, 2010
462010
Apparatus for vaporizing liquid raw material and apparatus for forming thin film
K Tsubouchi, K Masu
US Patent 5,421,895, 1995
451995
Full duplex transmission operation of a 2.45-GHz asynchronous spread spectrum using a SAN convolver
K Tsubouchi, H Nakase, A Namba, K Masu
IEEE transactions on ultrasonics, ferroelectrics, and frequency control 40 …, 1993
441993
RF-powered transceiver with an energy-and spectral-efficient IF-based quadrature backscattering transmitter
A Shirane, Y Fang, H Tan, T Ibe, H Ito, N Ishihara, K Masu
IEEE Journal of Solid-State Circuits 50 (12), 2975-2987, 2015
432015
Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride
N Mikoshiba, K Tsubouchi, K Masu
US Patent 5,180,687, 1993
431993
Multilevel metallization based on Al CVD
K Masu, H Matsuhashi, A Gotoh, JH Chung, M Yokoyama, R Tajima, ...
1996 Symposium on VLSI Technology. Digest of Technical Papers, 44-45, 1996
421996
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