silke christiansen
silke christiansen
Max Planck Institut fr die Physik des Lichts
Email verificata su mpl.mpg.de
TitoloCitata daAnno
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
T Metzger, R Hpler, E Born, O Ambacher, M Stutzmann, R Stmmer, ...
Philosophical magazine A 77 (4), 1013-1025, 1998
5571998
Silicon nanowire-based solar cells on glass: synthesis, optical properties, and cell parameters
V Sivakov, G Andr, A Gawlik, A Berger, J Plentz, F Falk, SH Christiansen
Nano letters 9 (4), 1549-1554, 2009
5162009
Silicon nanowire-based solar cells
T Stelzner, M Pietsch, G Andr, F Falk, E Ose, S Christiansen
Nanotechnology 19 (29), 295203, 2008
4622008
Measurement of the bending strength of vapor− liquid− solid grown silicon nanowires
S Hoffmann, I Utke, B Moser, J Michler, SH Christiansen, V Schmidt, ...
Nano letters 6 (4), 622-625, 2006
2702006
High performance strained silicon FinFETs device and method for forming same
SW Bedell, KK Chan, D Chidambarrao, SH Christianson, JO Chu, ...
US Patent 7,705,345, 2010
2302010
Strained state of Ge (Si) islands on Si: Finite element calculations and comparison to convergent beam electron‐diffraction measurements
S Christiansen, M Albrecht, HP Strunk, HJ Maier
Applied physics letters 64 (26), 3617-3619, 1994
2231994
Optical properties of individual silicon nanowires for photonic devices
G Bronstrup, N Jahr, C Leiterer, A Cski, W Fritzsche, S Christiansen
ACS nano 4 (12), 7113-7122, 2010
1902010
Fracture strength and Young’s modulus of ZnO nanowires
S Hoffmann, F stlund, J Michler, HJ Fan, M Zacharias, SH Christiansen, ...
Nanotechnology 18 (20), 205503, 2007
1602007
Wafer direct bonding: From advanced substrate engineering to future applications in micro/nanoelectronics
SH Christiansen, R Singh, U Gosele
Proceedings of the IEEE 94 (12), 2060-2106, 2006
1592006
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
SH Christiansen, JO Chu, A Grill, PM Mooney
US Patent 6,593,625, 2003
1562003
Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same
SH Christiansen, A Grill, PM Mooney
US Patent 6,515,335, 2003
1462003
Phonons as probes in self-organized SiGe islands
J Groenen, R Carles, S Christiansen, M Albrecht, W Dorsch, HP Strunk, ...
Applied physics letters 71 (26), 3856-3858, 1997
1451997
Microstructure of novel superhard nanocrystalline-amorphous composites as analyzed by high resolution transmission electron microscopy
S Christiansen, M Albrecht, HP Strunk, S Veprek
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer…, 1998
1381998
Ultrasensitive silicon nanowire for real-world gas sensing: noninvasive diagnosis of cancer from breath volatolome
N Shehada, G Brönstrup, K Funka, S Christiansen, M Leja, H Haick
Nano letters 15 (2), 1288-1295, 2015
1362015
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
SH Christiansen, JO Chu, A Grill, PM Mooney
US Patent 6,855,649, 2005
1292005
Nanostructured gold films for SERS by block copolymer-templated galvanic displacement reactions
Y Wang, M Becker, L Wang, J Liu, R Scholz, J Peng, U Gösele, ...
Nano letters 9 (6), 2384-2389, 2009
1282009
Surface ripples, crosshatch pattern, and dislocation formation: Cooperating mechanisms in lattice mismatch relaxation
M Albrecht, S Christiansen, J Michler, W Dorsch, HP Strunk, PO Hansson, ...
Applied physics letters 67 (9), 1232-1234, 1995
1211995
Axial pn junctions realized in silicon nanowires by ion implantation
S Hoffmann, J Bauer, C Ronning, T Stelzner, J Michler, C Ballif, V Sivakov, ...
Nano letters 9 (4), 1341-1344, 2009
1192009
Vapour-transport-deposition growth of ZnO nanostructures: switch between c-axial wires and a-axial belts by indium doping
HJ Fan, B Fuhrmann, R Scholz, C Himcinschi, A Berger, H Leipner, ...
Nanotechnology 17 (11), S231, 2006
1152006
Synthesis mechanisms of organized gold nanoparticles: influence of annealing temperature and atmosphere
M Bechelany, X Maeder, J Riesterer, J Hankache, D Lerose, ...
Crystal Growth & Design 10 (2), 587-596, 2010
1142010
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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