Lateral 1.8 kV -Ga2 O3 MOSFET With 155 MW/cm2 Power Figure of Merit K Tetzner, EB Treidel, O Hilt, A Popp, SB Anooz, G Wagner, A Thies, ...
IEEE Electron Device Letters 40 (9), 1503-1506, 2019
129 2019 Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ...
Apl Materials 7 (2), 2019
103 2019 Influence of Strontium Doping on the Indirect Band Gap and Optical Constants of Ammonium Zinc Chloride Crystals MA Gaffar, AA El-Fadl, SB Anooz
Physica B 327, 43, 2003
102 2003 Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE S Bin Anooz, R Grüneberg, C Wouters, R Schewski, M Albrecht, A Fiedler, ...
Applied Physics Letters 116 (18), 2020
77 2020 Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides Z Galazka, S Ganschow, K Irmscher, D Klimm, M Albrecht, R Schewski, ...
Progress in Crystal Growth and Characterization of Materials 67 (1), 100511, 2020
59 2020 Strain-induced phase transitions in epitaxial NaNbO3 thin films grown by metal–organic chemical vapour deposition J Schwarzkopf, M Schmidbauer, T Remmele, A Duk, A Kwasniewski, ...
Journal of Applied Crystallography 45 (5), 1015-1023, 2012
49 2012 Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method Z Galazka, S Ganschow, P Seyidov, K Irmscher, M Pietsch, TS Chou, ...
Applied Physics Letters 120 (15), 2022
39 2022 Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE SB Anooz, R Grüneberg, TS Chou, A Fiedler, K Irmscher, C Wouters, ...
Journal of Physics D: Applied Physics 54 (3), 034003, 2020
39 2020 Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices K Tetzner, O Hilt, A Popp, SB Anooz, J Würfl
Microelectronics Reliability 114, 113951, 2020
35 2020 Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE TS Chou, P Seyidov, S Bin Anooz, R Grüneberg, TTV Tran, K Irmscher, ...
AIP Advances 11 (11), 2021
31 2021 The solid state phase transformation of potassium sulfate SB Anooz, R Bertram, D Klimm
Solid state communications 141 (9), 497-501, 2007
28 2007 Exploiting the Nanostructural Anisotropy of β-Ga2 O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts MH Lee, TS Chou, S Bin Anooz, Z Galazka, A Popp, RL Peterson
ACS nano 16 (8), 11988-11997, 2022
26 2022 Optical Absorption Spectra and Related Parameters of Ammonium Zinc Chloride Crystal in the Antiferroelectric and commensurate phases MA Gaffar, AA El-Fadl, SB Anooz
Cryst. Res. Technol. 38, 798, 2003
23 2003 Optical properties of pure and metal ions doped ammonium sulfate single crystals AA El-Fadl, SB Anooz
Crystal Research and Technology 41, 487, 2006
22 2006 SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes K Tetzner, K Egbo, M Klupsch, RS Unger, A Popp, TS Chou, SB Anooz, ...
Applied Physics Letters 120 (11), 2022
19 2022 Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy S Bin Anooz, A Popp, R Grüneberg, C Wouters, R Schewski, ...
Journal of Applied Physics 125 (19), 2019
19 2019 Impact of epitaxial strain on the ferromagnetic transition temperature of SrRuO3 thin films R Dirsyte, J Schwarzkopf, M Schmidbauer, G Wagner, K Irmscher, ...
Thin Solid Films 519 (19), 6264-6268, 2011
18 2011 Approaching the high intrinsic electrical resistivity of NbO2 in epitaxially grown films J Stoever, JE Boschker, S Bin Anooz, M Schmidbauer, P Petrik, ...
Applied Physics Letters 116 (18), 2020
14 2020 Effects of post‐growth annealing on physical properties of SrRuO3 thin film grown by MOCVD SB Anooz, J Schwarzkopf, R Dirsyte, G Wagner, R Fornari
physica status solidi (a) 207 (11), 2492-2498, 2010
13 2010 Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films TS Chou, S Bin Anooz, R Grüneberg, N Dropka, J Rehm, TTV Tran, ...
Applied Physics Letters 121 (3), 2022
11 2022