| VHDL-AMS and Verilog-AMS as alternative hardware description languages for efficient modeling of multidiscipline systems F Pêcheux, C Lallement, A Vachoux IEEE transactions on Computer-Aided design of integrated Circuits and …, 2005 | 293 | 2005 |
| Charge-based modeling of junctionless double-gate field-effect transistors JM Sallese, N Chevillon, C Lallement, B Iniguez, F Prégaldiny IEEE Transactions on Electron Devices 58 (8), 2628-2637, 2011 | 264 | 2011 |
| CNTFET modeling and reconfigurable logic-circuit design I O'Connor, J Liu, F Gaffiot, F Prégaldiny, C Lallement, C Maneux, ... IEEE Transactions on Circuits and Systems I: Regular Papers 54 (11), 2365-2379, 2007 | 219 | 2007 |
| A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism JM Sallese, F Krummenacher, F Prégaldiny, C Lallement, A Roy, C Enz Solid-State Electronics 49 (3), 485-489, 2005 | 210 | 2005 |
| An efficient parameter extraction methodology for the EKV MOST model M Bucher, C Lallement, CC Enz Proceedings of International Conference on Microelectronic Test Structures …, 1996 | 131 | 1996 |
| The EPFL-EKV MOSFET model equations for simulation M Bucher, C Lallement, C Enz, F Théodoloz, F Krummenacher Version 2.6, 1998 | 129 | 1998 |
| A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs F Prégaldiny, C Lallement, D Mathiot Solid-State Electronics 46 (12), 2191-2198, 2002 | 74 | 2002 |
| Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model F Prégaldiny, C Lallement, D Mathiot Solid-State Electronics 48 (5), 781-787, 2004 | 70 | 2004 |
| Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects B Diagne, F Prégaldiny, C Lallement, JM Sallese, F Krummenacher Solid-State Electronics 52 (1), 99-106, 2008 | 69 | 2008 |
| Design-oriented compact models for CNTFETs F Pregaldiny, C Lallement, JB Kammerer International Conference on Design and Test of Integrated Systems in …, 2006 | 63 | 2006 |
| Accurate MOS modelling for analog circuit simulation using the EKV model M Bucher, C Lallement, C Enz, F Krummenacher 1996 IEEE International Symposium on Circuits and Systems. Circuits and …, 1996 | 58 | 1996 |
| A common core model for junctionless nanowires and symmetric double-gate FETs JM Sallese, F Jazaeri, L Barbut, N Chevillon, C Lallement IEEE transactions on electron devices 60 (12), 4277-4280, 2013 | 54 | 2013 |
| Generalization of the concept of equivalent thickness and capacitance to multigate MOSFETs modeling N Chevillon, JM Sallese, C Lallement, F Prégaldiny, M Madec, J Sedlmeir, ... IEEE Transactions on Electron Devices 59 (1), 60-71, 2011 | 54 | 2011 |
| An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs F Prégaldiny, C Lallement, R van Langevelde, D Mathiot Solid-State Electronics 48 (3), 427-435, 2004 | 53 | 2004 |
| Physics-based compact model for ultra-scaled FinFETs A Yesayan, F Prégaldiny, N Chevillon, C Lallement, JM Sallese Solid-State Electronics 62 (1), 165-173, 2011 | 52 | 2011 |
| Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation JM Sallese, M Bucher, C Lallement Solid-State Electronics 44 (6), 905-912, 2000 | 52 | 2000 |
| The EPFL-EKV MOSFET model equations for simulation, Version 2.6 M Bucher, C Lallement, C Enz, F Théodoloz, F Krummenacher Technical Report, EPFL, 1997 | 46 | 1997 |
| The EKV 3.0 compact MOS transistor model: accounting for deep-submicron aspects M Bucher, C Enz, F Krummenacher, JM Sallese, C Lallement, AS Porret Proc. MSM Int. Conf., Nanotech 2002, 670-673, 2002 | 45 | 2002 |
| Modelling and characterization of non-uniform substrate doping C Lallement, M Bucher, C Enz Solid-State Electronics 41 (12), 1857-1861, 1997 | 42 | 1997 |
| Scalable Gm/I based MOSFET model M Bucher, C Lallement, C Enz, F Théodoloz, F Krummenacher Int. Semicond. Dev. Research Symp.(ISDRS’97), 615-618, 1997 | 39 | 1997 |
Fabien PrégaldinyTélécom Physique StrasbourgEmail verificata su unistra.fr
