van der Waals heterostructures with high accuracy rotational alignment K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ...
Nano letters 16 (3), 1989-1995, 2016
639 2016 Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2 CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee
ACS nano 9 (1), 363-370, 2015
200 2015 Gate-tunable resonant tunneling in double bilayer graphene heterostructures B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ...
Nano letters 15 (1), 428-433, 2015
193 2015 Band Alignment in WSe2 –Graphene Heterostructures K Kim, S Larentis, B Fallahazad, K Lee, J Xue, DC Dillen, CM Corbet, ...
ACS nano 9 (4), 4527-4532, 2015
173 2015 CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films ME Ramon, A Gupta, C Corbet, DA Ferrer, HCP Movva, G Carpenter, ...
ACS nano 5 (9), 7198-7204, 2011
150 2011 Scaling of Al2O3 dielectric for graphene field-effect transistors B Fallahazad, K Lee, G Lian, S Kim, CM Corbet, DA Ferrer, L Colombo, ...
Applied Physics Letters 100 (9), 2012
140 2012 Bilayer graphene-hexagonal boron nitride heterostructure negative differential resistance interlayer tunnel FET S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ...
IEEE Electron Device Letters 36 (4), 405-407, 2015
66 2015 Raman spectroscopy and strain mapping in individual core-shell nanowires DC Dillen, KM Varahramyan, CM Corbet, E Tutuc
Physical Review B 86 (4), 045311, 2012
37 2012 Ultrathin, wafer-scale hexagonal boron nitride on dielectric surfaces by diffusion and segregation mechanism S Sonde, A Dolocan, N Lu, C Corbet, MJ Kim, E Tutuc, SK Banerjee, ...
2D Materials 4 (2), 025052, 2017
33 2017 Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions HCP Movva, ME Ramón, CM Corbet, S Sonde, F Chowdhury, ...
Applied Physics Letters 101 (18), 2012
30 2012 Improved contact resistance in ReSe2 thin film field-effect transistors CM Corbet, SS Sonde, E Tutuc, SK Banerjee
Applied Physics Letters 108 (16), 2016
27 2016 Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms CM Corbet, C McClellan, K Kim, S Sonde, E Tutuc, SK Banerjee
ACS nano 8 (10), 10480-10485, 2014
19 2014 Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets DA Ferrer, S Guchhait, H Liu, F Ferdousi, C Corbet, H Xu, M Doczy, ...
Journal of Applied Physics 110 (1), 2011
16 2011 ReS2-based interlayer tunnel field effect transistor OB Mohammed, HCP Movva, N Prasad, A Valsaraj, S Kang, CM Corbet, ...
Journal of Applied Physics 122 (24), 2017
12 2017 Poly (methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors A Sanne, HCP Movva, S Kang, C McClellan, CM Corbet, SK Banerjee
Applied Physics Letters 104 (8), 2014
12 2014 ACS Nano 9, 363 (2015) CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee, CET Al
8 Gate capacitance scaling and graphene field-effect transistors with ultra-thin top-gate dielectrics B Fallahazad, K Lee, S Kim, C Corbet, E Tutuc
69th Device Research Conference, 35-36, 2011
6 2011 ACS Nano 5, 7198 (2011) ME Ramón, A Gupta, C Corbet, DA Ferrer, HCP Movva, G Carpenter, ...
5 Graphene field-effect transistors with self-aligned spin-on-doping of source/drain access regions HCP Movva, ME Ramón, CM Corbet, FS Chowdhury, G Carpenter, ...
70th Device Research Conference, 175-176, 2012
3 2012 Gate tunable resonant tunneling in graphene-based heterostructures and device applications E Tutuc, B Fallahazad, S Kang, K Lee, K Kim, HCP Movva, X Mou, ...
2015 73rd Annual Device Research Conference (DRC), 269-270, 2015
1 2015