| Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs AJ Lelis, R Green, DB Habersat, M El IEEE Transactions on Electron Devices 62 (2), 316-323, 2014 | 429 | 2014 |
| Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements AJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ... IEEE Transactions on Electron Devices 55 (8), 1835-1840, 2008 | 361 | 2008 |
| A physical model of high temperature 4H-SiC MOSFETs S Potbhare, N Goldsman, A Lelis, JM McGarrity, FB McLean, D Habersat IEEE Transactions on Electron devices 55 (8), 2029-2040, 2008 | 211 | 2008 |
| Characterization of transient gate oxide trapping in SiC MOSFETs using fast I–V techniques M Gurfinkel, HD Xiong, KP Cheung, JS Suehle, JB Bernstein, Y Shapira, ... IEEE Transactions on Electron Devices 55 (8), 2004-2012, 2008 | 148 | 2008 |
| Relationship between 4H-SiC∕ SiO2 transition layer thickness and mobility TL Biggerstaff, CL Reynolds, T Zheleva, A Lelis, D Habersat, S Haney, ... Applied Physics Letters 95 (3), 2009 | 114 | 2009 |
| Application of reliability test standards to SiC Power MOSFETs R Green, A Lelis, D Habersat 2011 International Reliability Physics Symposium, EX. 2.1-EX. 2.9, 2011 | 95 | 2011 |
| Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs R Green, A Lelis, D Habersat Japanese Journal of Applied Physics 55 (4S), 04EA03, 2016 | 77 | 2016 |
| SiC MOSFET threshold-stability issues AJ Lelis, R Green, DB Habersat Materials Science in Semiconductor Processing 78, 32-37, 2018 | 62 | 2018 |
| Temperature-dependence of SiC MOSFET threshold-voltage instability AJ Lelis, DB Habersat, R Green, N Goldsman Materials Science Forum 600, 807-810, 2009 | 58 | 2009 |
| Two-way tunneling model of oxide trap charging and discharging in SiC MOSFETs AJ Lelis, DB Habersat, R Green, N Goldsman Materials Science Forum 717, 465-468, 2012 | 54 | 2012 |
| High-temperature reliability of SiC power MOSFETs AJ Lelis, R Green, DB Habersat Materials Science Forum 679, 599-602, 2011 | 54 | 2011 |
| Bias stress-induced threshold-voltage instability of SiC MOSFETs AJ Lelis, DB Habersat, G Lopez, JM McGarrity, FB McLean, N Goldsman Materials science forum 527, 1317-1320, 2006 | 47 | 2006 |
| Measurement considerations for evaluating BTI effects in SiC MOSFETs DB Habersat, AJ Lelis, R Green Microelectronics Reliability 81, 121-126, 2018 | 37 | 2018 |
| SiC MOSFET reliability and implications for qualification testing AJ Lelis, R Green, DB Habersat 2017 IEEE International Reliability Physics Symposium (IRPS), 2A-4.1-2A-4.4, 2017 | 36 | 2017 |
| SiC MOSFET reliability and implications for qualification testing AJ Lelis, R Green, DB Habersat 2017 IEEE International Reliability Physics Symposium (IRPS), 2A-4.1-2A-4.4, 2017 | 36 | 2017 |
| AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques R Bathe, RD Vispute, D Habersat, RP Sharma, T Venkatesan, CJ Scozzie, ... Thin solid films 398, 575-580, 2001 | 35 | 2001 |
| Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications SS Hullavarad, RD Vispute, B Nagaraj, VN Kulkarni, S Dhar, ... Journal of electronic materials 35, 777-794, 2006 | 32 | 2006 |
| (Invited) Effect of Threshold-Voltage Instability on SiC Power MOSFET High-Temperature Reliability A Lelis, R Green, D Habersat ECS Transactions 41 (8), 203-214, 2011 | 31 | 2011 |
| Effect of threshold-voltage instability on SiC DMOSFET reliability AJ Lelis, R Green, D Habersat, N Goldsman 2008 IEEE International Integrated Reliability Workshop Final Report, 72-76, 2008 | 31 | 2008 |
| Ultra-fast characterization of transient gate oxide trapping in SiC MOSFETs M Gurfinkel, J Suehle, JB Bernstein, Y Shapira, AJ Lelis, D Habersat, ... 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 30 | 2007 |
Aivars LelisARLVerified email at mail.mil
