| Recombination at dislocations T Figielski Solid-State Electronics 21 (11-12), 1403-1412, 1978 | 150 | 1978 |
| Photostriction effect in germanium T Figielski physica status solidi (b) 1 (4), 306-316, 1961 | 118 | 1961 |
| Theory of carrier recombination at dislocations in germanium T Figielski physica status solidi (b) 6 (2), 429-440, 1964 | 62 | 1964 |
| Electron emission from extended defects: DLTS signal in case of dislocation traps T Figielski physica status solidi (a) 121 (1), 187-193, 1990 | 57 | 1990 |
| Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures O Yastrubchak, T Wosiński, JZ Domagała, E Łusakowska, T Figielski, ... Journal of Physics: Condensed Matter 16 (2), S1, 2003 | 52 | 2003 |
| Misfit dislocations and surface morphology of lattice-mismatched GaAs/InGaAs heterostructures O Yastrubchak, T Wosinski, T Figielski, E Lusakowska, B Pecz, AL Toth Physica E: Low-dimensional Systems and Nanostructures 17, 561-563, 2003 | 45 | 2003 |
| Dislocations as traps for holes in germanium T Figielski physica status solidi (b) 9 (2), 555-566, 1965 | 44 | 1965 |
| On the origin of light emitted from reverse biased pn junctions T Figielski, A Torun Proc. 6th Int. Conf. Phys. Semicond, 16-20, 1962 | 44 | 1962 |
| Trapping Processes at Dislocations in Plastically Bent Germanium M Jastrzębska, T Figielski physica status solidi (b) 14 (2), 381-390, 1966 | 43 | 1966 |
| Compensation in GaAs crystals due to anti-structure disorder T Figielski Applied Physics A 35, 255-261, 1984 | 42 | 1984 |
| Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures O Yastrubchak, T Wosiński, A Mąkosa, T Figielski, AL Toth Physica B: Condensed Matter 308, 757-760, 2001 | 37 | 2001 |
| Mechanism for the creation of antisite defects, during combined climb-glide motion of dislocations in sphalerite-structure crystals T Figielski Applied Physics A 36, 217-219, 1985 | 36 | 1985 |
| Spin-dependent recombination at dislocations in silicon T Wosinski, T Figielski Phys. Status Solidi (a);(German Democratic Republic) 71 (1), 1975 | 36 | 1975 |
| Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures T Wosiński, A Makosa, T Figielski, J Raczyńska Applied physics letters 67 (8), 1131-1133, 1995 | 35 | 1995 |
| Arsenic antisite defects as the main electron traps in plastically deformed GaAs T Wosiński, A Morawski, T Figielski Applied Physics A 30, 233-235, 1983 | 35 | 1983 |
| Symmetry of the EL2 defect in GaAs T Figielski, T Wosinski Physical Review B 36 (2), 1269, 1987 | 29 | 1987 |
| Deep-level defects at lattice-mismatched interfaces in GaAs-based heterojunctions T Wosinski, O Yastrubchak, A Makosa, T Figielski Journal of Physics: Condensed Matter 12 (49), 10153, 2000 | 28 | 2000 |
| Energy levels and electrical activity of dislocation electron states in GaAs T Wosiński, T Figielski Acta Physica Polonica A 83 (1), 51-58, 1993 | 27 | 1993 |
| Double anion antisite in GaAs-the simplest member of EL2 family? T Figielski, E Kaczmarek, T Wosiński Applied Physics A 38, 253-261, 1985 | 25 | 1985 |
| Dislocations as electrically active centres in semiconductors—half a century from the discovery T Figielski Journal of Physics: Condensed Matter 14 (48), 12665, 2002 | 24 | 2002 |
