| Ultra-thin body super-steep retrograde well (SSRW) FET devices DC Boyd, JR Holt, M Ieong, RT Mo, Z Ren, GG Shahidi US Patent 7,002,214, 2006 | 190 | 2006 |
| High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography P Agnello, T Ivers, C Warm, R Wise, R Wachnik, D Schepis, S Sankaran, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 133 | 2006 |
| Structure and method for mobility enhanced MOSFETs with unalloyed silicide Y Liu, D Chidambarrao, O Gluschenkov, JR Holt, RT Mo, K Rim US Patent 8,217,423, 2012 | 131 | 2012 |
| Structure and method for mobility enhanced MOSFETs with unalloyed silicide Y Liu, D Chidambarrao, O Gluschenkov, JR Holt, RT Mo, K Rim US Patent 8,217,423, 2012 | 131 | 2012 |
| Structure and method for mobility enhanced MOSFETs with unalloyed silicide Y Liu, D Chidambarrao, O Gluschenkov, JR Holt, RT Mo, K Rim US Patent 8,217,423, 2012 | 131 | 2012 |
| Chemical treatment to retard diffusion in a semiconductor overlayer KK Chan, H Chen, MA Gribelyuk, JR Holt, WH Lee, RM Mitchell, RT Mo, ... US Patent 7,071,103, 2006 | 122 | 2006 |
| Method to control source/drain stressor profiles for stress engineering YF Chong, Z Luo, JR Holt US Patent 8,017,487, 2011 | 115 | 2011 |
| Stressed field effect transistors on hybrid orientation substrate D Chidambarrao, JR Holt, M Ieong, OC Ouyang, S Panda US Patent 7,405,436, 2008 | 114 | 2008 |
| High-resolution three-dimensional structural microscopy by single-angle Bragg ptychography SO Hruszkewycz, M Allain, MV Holt, CE Murray, JR Holt, PH Fuoss, ... Nature materials 16 (2), 244-251, 2017 | 111 | 2017 |
| Stressed field effect transistors on hybrid orientation substrate D Chidambarrao, JR Holt, M Ieong, OC Ouyang, S Panda US Patent 7,405,436, 2008 | 107 | 2008 |
| Formation of raised source/drain structures in NFET with embedded SiGe in PFET YF Chong, Z Luo, JC Kim, JR Holt US Patent 7,718,500, 2010 | 104 | 2010 |
| 22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL S Narasimha, P Chang, C Ortolland, D Fried, E Engbrecht, K Nummy, ... 2012 International Electron Devices Meeting, 3.3. 1-3.3. 4, 2012 | 103 | 2012 |
| Metal oxide field effect transistor with a sharp halo H Chen, JR Holt, R Jagannathan, WC Natzle, MR Sievers, RS Wise US Patent 7,859,013, 2010 | 102 | 2010 |
| Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain K Cheng, A Khakifirooz, P Kulkarni, S Kanakasabapathy, S Schmitz, ... 2009 Symposium on VLSI Technology, 212-213, 2009 | 96 | 2009 |
| Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography SO Hruszkewycz, MV Holt, CE Murray, J Bruley, J Holt, A Tripathi, ... Nano letters 12 (10), 5148-5154, 2012 | 95 | 2012 |
| Integration and optimization of embedded-SiGe, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies LT Su, J Pellerin, SF Huang, M Khare, D Schepis, K Rim, S Liming, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 93 | 2005 |
| Stress enhanced transistor devices and methods of making TN Adam, JR Holt, TA Wallner US Patent App. 12/136,195, 2009 | 85 | 2009 |
| Material for contact etch layer to enhance device performance AB Chakravarti, S Narasimha, V Chan, J Holt, SN Chakravarti US Patent 7,001,844, 2006 | 78 | 2006 |
| High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL WH Lee, A Waite, H Nii, HM Nayfeh, V McGahay, H Nakayama, D Fried, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005 | 69 | 2005 |
| A 7nm CMOS technology platform for mobile and high performance compute application S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017 | 64 | 2017 |
