Andrea Parisini
Andrea Parisini
CNR - IMM Sezione di Bologna
Email verificata su
Citata da
Citata da
Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates
S Solmi, A Parisini, R Angelucci, A Armigliato, D Nobili, L Moro
Physical Review B 53 (12), 7836, 1996
Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon
D Nobili, S Solmi, A Parisini, M Derdour, A Armigliato, L Moro
Physical Review B 49 (4), 2477, 1994
Wet Adsorption of a Luminescent EuIII complex on Carbon Nanotubes Sidewalls
G Accorsi, N Armaroli, A Parisini, M Meneghetti, R Marega, M Prato, ...
Advanced functional materials 17 (15), 2975-2982, 2007
Electrical activity and structural evolution correlations in laser and thermally annealed As‐implanted Si specimens
A Parisini, A Bourret, A Armigliato, M Servidori, S Solmi, R Fabbri, ...
Journal of applied physics 67 (5), 2320-2332, 1990
Engineering interfacial structure in “Giant” PbS/CdS quantum dots for photoelectrochemical solar energy conversion
L Jin, G Sirigu, X Tong, A Camellini, A Parisini, G Nicotra, C Spinella, ...
Nano Energy 30, 531-541, 2016
Gas sensors for air quality monitoring: realisation and characterisation of undoped and noble metal-doped SnO2 thin sensing films deposited by the pulsed laser ablation
S Nicoletti, L Dori, GC Cardinali, A Parisini
Sensors and Actuators B: Chemical 60 (2-3), 90-96, 1999
Permeated porous silicon for hydrocarbon sensor fabrication
R Angelucci, A Poggi, L Dori, GC Cardinali, A Parisini, A Tagliani, ...
Sensors and Actuators A: Physical 74 (1-3), 95-99, 1999
Dual emission in asymmetric “giant” PbS/CdS/CdS core/shell/shell quantum dots
H Zhao, G Sirigu, A Parisini, A Camellini, G Nicotra, F Rosei, V Morandi, ...
Nanoscale 8 (7), 4217-4226, 2016
Extended x-ray-absorption fine-structure study of the local atomic structure in As+ heavily implanted silicon
JL Allain, JR Regnard, A Bourret, A Parisini, A Armigliato, G Tourillon, ...
Physical Review B 46 (15), 9434, 1992
Investigation on indium diffusion in silicon
S Solmi, A Parisini, M Bersani, D Giubertoni, V Soncini, G Carnevale, ...
Journal of applied physics 92 (3), 1361-1366, 2002
Arsenic uphill diffusion during shallow junction formation
M Ferri, S Solmi, A Parisini, M Bersani, D Giubertoni, M Barozzi
Journal of Applied Physics 99 (11), 113508, 2006
Influence of electron-beam parameters on the radiation-induced formation of graphitic onions
G Lulli, A Parisini, G Mattei
Ultramicroscopy 60 (2), 187-194, 1995
Cap removal and shortening of double-walled and very-thin multi-walled carbon nanotubes under mild oxidative conditions
R Marega, G Accorsi, M Meneghetti, A Parisini, M Prato, D Bonifazi
Carbon 47 (3), 675-682, 2009
Diamond hexagonal silicon phase and {113} defects Energy calculations and new defect models
A Parisini, A Bourret
Philosophical Magazine A 67 (3), 605-625, 1993
Activation of porous silicon layers using Zn2SiO4: Mn2+ phosphor particles
N Taghavinia, G Lerondel, H Makino, A Parisini, A Yamamoto, T Yao, ...
Journal of luminescence 96 (2-4), 171-175, 2002
Monte Carlo simulation of elastic and inelastic scattering of electrons in thin films. I. Valence electron losses
A Desalvo, A Parisini, R Rosa
Journal of Physics D: Applied Physics 17 (12), 2455, 1984
TEM characterisation of porous silicon
A Parisini, R Angelucci, L Dori, A Poggi, P Maccagnani, GC Cardinali, ...
Micron 31 (3), 223-230, 2000
Porous silicon layer permeated with Sn–V mixed oxides for hydrocarbon sensor fabrication
R Angelucci, A Poggi, L Dori, GC Cardinali, A Parisini, G Pizzochero, ...
Thin solid films 297 (1-2), 43-47, 1997
Electron microscopy characterization of monoclinic SiAs precipitates in heavily As+-implanted silicon
A Armigliato, A Parisini
Journal of materials research 6 (8), 1701-1710, 1991
Influence of the electrolyte viscosity on the structural features of porous silicon
M Servidori, C Ferrero, S Lequien, S Milita, A Parisini, R Romestain, ...
Solid state communications 118 (2), 85-90, 2001
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
Articoli 1–20