High‐performance transition metal dichalcogenide photodetectors enhanced by self‐assembled monolayer doping DH Kang, MS Kim, J Shim, J Jeon, HY Park, WS Jung, HY Yu, CH Pang, ...
Advanced Functional Materials 25 (27), 4219-4227, 2015
301 2015 N-Channel Germanium MOSFET Fabricated Below 360 by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs JH Park, D Kuzum, WS Jung, KC Saraswat
Electron Device Letters, IEEE 32 (3), 234-236, 2011
241 2011 Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane DH Kang, J Shim, SK Jang, J Jeon, MH Jeon, GY Yeom, WS Jung, ...
ACS nano 9 (2), 1099-1107, 2015
164 2015 Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles D Nam, DS Sukhdeo, JH Kang, J Petykiewicz, JH Lee, WS Jung, ...
Nano letters 13 (7), 3118-3123, 2013
144 2013 Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism. J Shim, HS Kim, YS Shim, DH Kang, HY Park, J Lee, J Jeon, SJ Jung, ...
Advanced Materials (Deerfield Beach, Fla.) 28 (26), 5293-5299, 2016
110 2016 Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design. HY Park, WS Jung, DH Kang, J Jeon, G Yoo, Y Park, J Lee, YH Jang, ...
Advanced Materials (Deerfield Beach, Fla.) 28 (5), 864-870, 2015
98 2015 High-efficiency pin photodetectors on selective-area-grown Ge for monolithic integration HY Yu, S Ren, WS Jung, AK Okyay, DAB Miller, KC Saraswat
IEEE Electron Device Letters 30 (11), 1161-1163, 2009
76 2009 Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS2 ) through Thermal and Optical Activation HY Park, MH Lim, J Jeon, G Yoo, DH Kang, SK Jang, MH Jeon, Y Lee, ...
ACS nano 9 (3), 2368-2376, 2015
72 2015 Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application WS Jung, JH Park, A Nainani, D Nam, KC Saraswat
Applied Physics Letters 101 (7), 2012
55 2012 Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization HW Jung, WS Jung, HY Yu, JH Park
Journal of alloys and compounds 561, 231-233, 2013
45 2013 Monolithic integration of germanium-on-insulator pin photodetector on silicon JH Nam, F Afshinmanesh, D Nam, WS Jung, TI Kamins, ML Brongersma, ...
Optics express 23 (12), 15816-15823, 2015
42 2015 Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration JH Park, M Tada, WS Jung, HSP Wong, KC Saraswat
Journal of Applied Physics 106 (7), 074510-074510-6, 2009
36 2009 9.4% efficient amorphous silicon solar cell on high aspect-ratio glass microcones. J Kim, C Battaglia, M Charrière, A Hong, W Jung, H Park, C Ballif, ...
Advanced Materials (Deerfield Beach, Fla.) 26 (24), 4082-4086, 2014
34 2014 Formation of metal nanospheres and microspheres AJ Hong, WS Jung, J Kim, JW Nah, DK Sadana
US Patent 8,685,858, 2014
29 2014 Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter IY Lee, HY Park, JH Park, J Lee, WS Jung, HY Yu, SW Kim, GH Kim, ...
Organic Electronics 14 (6), 1586-1590, 2013
29 2013 Poly-4-vinylphenol and poly (melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics I Lee, HY Park, J Park, G Yoo, MH Lim, J Park, S Rathi, WS Jung, J Kim, ...
Nanoscale 6 (7), 3830-3836, 2014
25 2014 Formation of metal nanospheres and microspheres AJ Hong, WS Jung, J Kim, JW Nahum, DK Sadana
US Patent 9,040,428, 2015
24 2015 Formation of metal nanospheres and microspheres AJ Hong, WS Jung, J Kim, JW Nahum, DK Sadana
US Patent 9,040,428, 2015
24 2015 Characterization of Geometric Leakage Current of GeO2 Isolation and Effect of Forming Gas Annealing in Germanium p-n Junctions WS Jung, JH Park, JYJ Lin, S Wong, KC Saraswat
Electron Device Letters, IEEE, 1-3, 2012
18 * 2012 Impacts of the thermal recovery process on In–Ga–Zn–O (IGZO) TFTs SH Choi, MH Lim, WS Jung, JH Park
IEEE electron device letters 35 (8), 835-837, 2014
17 2014