Masakazu AONO
Masakazu AONO
MANA in NIMS
Verified email at mth.biglobe.ne.jp - Homepage
Title
Cited by
Cited by
Year
Nanoionics-based resistive switching memories
R Waser, M Aono
Nanoscience And Technology: A Collection of Reviews from Nature Journals…, 2010
46642010
Quantized conductance atomic switch
K Terabe, T Hasegawa, T Nakayama, M Aono
Nature 433 (7021), 47-50, 2005
12362005
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
T Ohno, T Hasegawa, T Tsuruoka, K Terabe, JK Gimzewski, M Aono
Nature materials 10 (8), 591-595, 2011
10432011
Nanometer-scale switches using copper sulfide
T Sakamoto, H Sunamura, H Kawaura, T Hasegawa, T Nakayama, ...
Applied Physics Letters 82 (18), 3032-3034, 2003
5852003
ZnO-based ultraviolet photodetectors
K Liu, M Sakurai, M Aono
Sensors 10 (9), 8604-8634, 2010
4892010
Nanoscale control of chain polymerization
Y Okawa, M Aono
Nature 409 (6821), 683-684, 2001
4822001
Forming nanomaterials as layered functional structures toward materials nanoarchitectonics
K Ariga, Q Ji, JP Hill, Y Bando, M Aono
NPG Asia Materials 4 (5), e17-e17, 2012
3962012
Dekker encyclopedia of nanoscience and nanotechnology
JA Schwarz, CI Contescu, K Putyera
CRC press, 2004
3832004
Quantitative surface atomic geometry and two-dimensional surface electron distribution analysis by a new technique in low-energy ion scattering
M Aono, C Oshima, S Zaima, S Otani, Y Ishizawa
Japanese journal of applied physics 20 (11), L829, 1981
3401981
Angle-resolved photoemission, valence-band dispersions E (k→), and electron and hole lifetimes for GaAs
TC Chiang, JA Knapp, M Aono, DE Eastman
Physical Review B 21 (8), 3513, 1980
3181980
Atomic switch: Atom/ion movement controlled devices for beyond Von‐Neumann computers
T Hasegawa, K Terabe, T Tsuruoka, M Aono
Advanced Materials 24 (2), 252-267, 2012
2922012
Giant improvement of the performance of ZnO nanowire photodetectors by Au nanoparticles
K Liu, M Sakurai, M Liao, M Aono
The Journal of Physical Chemistry C 114 (46), 19835-19839, 2010
2792010
A nonvolatile programmable solid-electrolyte nanometer switch
S Kaeriyama, T Sakamoto, H Sunamura, M Mizuno, H Kawaura, ...
IEEE Journal of Solid-State Circuits 40 (1), 168-176, 2005
2672005
Forming and switching mechanisms of a cation-migration-based oxide resistive memory
T Tsuruoka, K Terabe, T Hasegawa, M Aono
Nanotechnology 21 (42), 425205, 2010
2662010
Learning abilities achieved by a single solid‐state atomic switch
T Hasegawa, T Ohno, K Terabe, T Tsuruoka, T Nakayama, JK Gimzewski, ...
Advanced materials 22 (16), 1831-1834, 2010
2612010
Structure analysis of the Si(111)√3 √3 R30-Ag surface
M Katayama, RS Williams, M Kato, E Nomura, M Aono
Physical review letters 66 (21), 2762, 1991
2561991
Electronic transport in resistive switch
T Sakamoto, K Lister, N Banno, T Hasegawa, K Terabe, M Aono
Applied Physics Letters 91 (9), 092110, 2007
2442007
Nature Mater. 6, 833 (2007)
R Waser, M Aono
2402008
Low-energy ion scattering from the Si (001) surface
M Aono, Y Hou, C Oshima, Y Ishizawa
Physical Review Letters 49 (8), 567, 1982
2221982
Nanoarchitectonics: a new materials horizon for nanotechnology
K Ariga, Q Ji, W Nakanishi, JP Hill, M Aono
Materials Horizons 2 (4), 406-413, 2015
2202015
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Articles 1–20