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Benjamin Grisafe
Benjamin Grisafe
Verified email at nd.edu
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Year
SoC logic compatible multi-bit FeMFET weight cell for neuromorphic applications
K Ni, JA Smith, B Grisafe, T Rakshit, B Obradovic, JA Kittl, M Rodder, ...
2018 IEEE International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2018
1062018
Back-end-of-line compatible transistors for monolithic 3-D integration
S Datta, S Dutta, B Grisafe, J Smith, S Srinivasa, H Ye
IEEE micro 39 (6), 8-15, 2019
892019
Monolithic 3D integration of high endurance multi-bit ferroelectric FET for accelerating compute-in-memory
S Dutta, H Ye, W Chakraborty, YC Luo, M San Jose, B Grisafe, A Khanna, ...
2020 IEEE International Electron Devices Meeting (IEDM), 36.4. 1-36.4. 4, 2020
862020
Programmable coupled oscillators for synchronized locomotion
S Dutta, A Parihar, A Khanna, J Gomez, W Chakraborty, M Jerry, B Grisafe, ...
Nature communications 10 (1), 3299, 2019
682019
Fundamental understanding and control of device-to-device variation in deeply scaled ferroelectric FETs
K Ni, W Chakraborty, J Smith, B Grisafe, S Datta
2019 Symposium on VLSI Technology, T40-T41, 2019
672019
Ag/HfO2based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs
N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ...
2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016
632016
BEOL compatible dual-gate ultra thin-body W-doped indium-oxide transistor with Ion= 370μA/μm, SS= 73mV/dec and Ion/Ioff Ratio> 4× 109
W Chakraborty, B Grisafe, H Ye, I Lightcap, K Ni, S Datta
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
542020
Two-dimensional tantalum disulfide: controlling structure and properties via synthesis
R Zhao, B Grisafe, RK Ghosh, S Holoviak, B Wang, K Wang, N Briggs, ...
2D Materials 5 (2), 025001, 2018
462018
In-memory computing primitive for sensor data fusion in 28 nm HKMG FeFET technology
K Ni, B Grisafe, W Chakraborty, AK Saha, S Dutta, M Jerry, JA Smith, ...
2018 IEEE International Electron Devices Meeting (IEDM), 16.1. 1-16.1. 4, 2018
442018
Ultra-low power probabilistic IMT neurons for stochastic sampling machines
M Jerry, A Parihar, B Grisafe, A Raychowdhury, S Datta
2017 Symposium on VLSI Technology, T186-T187, 2017
402017
Fabrication, characterization, and analysis of Ge/GeSn heterojunction p-type tunnel transistors
C Schulte-Braucks, R Pandey, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
IEEE Transactions on Electron Devices 64 (10), 4354-4362, 2017
382017
A novel ferroelectric superlattice based multi-level cell non-volatile memory
K Ni, J Smith, H Ye, B Grisafe, GB Rayner, A Kummel, S Datta
2019 IEEE International Electron Devices Meeting (IEDM), 28.8. 1-28.8. 4, 2019
372019
Equivalent oxide thickness (EOT) scaling with hafnium zirconium oxide high-κ dielectric near morphotropic phase boundary
K Ni, A Saha, W Chakraborty, H Ye, B Grisafe, J Smith, GB Rayner, ...
2019 IEEE international electron devices meeting (IEDM), 7.4. 1-7.4. 4, 2019
372019
Fundamental mechanism behind volatile and non-volatile switching in metallic conducting bridge RAM
N Shukla, RK Ghosh, B Grisafe, S Datta
2017 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2017
372017
Neural sampling machine with stochastic synapse allows brain-like learning and inference
S Dutta, G Detorakis, A Khanna, B Grisafe, E Neftci, S Datta
Nature Communications 13 (1), 2571, 2022
362022
Low thermal budget (< 250° C) dual-gate amorphous indium tungsten oxide (IWO) thin-film transistor for monolithic 3-D integration
W Chakraborty, H Ye, B Grisafe, I Lightcap, S Datta
IEEE Transactions on Electron Devices 67 (12), 5336-5342, 2020
362020
Plasmonics-based detection of H2 and CO: discrimination between reducing gases facilitated by material control
G Dharmalingam, NA Joy, B Grisafe, MA Carpenter
Beilstein Journal of Nanotechnology 3 (1), 712-721, 2012
332012
Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6and Ge/Ge0.93Sn0.07hetero-junction tunnel FETs
R Pandey, C Schulte-Braucks, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2016
322016
Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors
B Grisafe, M Jerry, JA Smith, S Datta
IEEE Electron Device Letters 40 (10), 1602-1605, 2019
312019
Hf0.5Zr0.5O2-Based Ferroelectric Gate HEMTs With Large Threshold Voltage Tuning Range
C Wu, H Ye, N Shaju, J Smith, B Grisafe, S Datta, P Fay
IEEE Electron Device Letters 41 (3), 337-340, 2020
302020
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