| GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ... Journal of Applied Physics 130 (18), 2021 | 266 | 2021 |
| Fully vertical GaN-on-Si power MOSFETs RA Khadar, C Liu, R Soleimanzadeh, E Matioli IEEE Electron Device Letters 40 (3), 443-446, 2019 | 91 | 2019 |
| GaN-on-Si quasi-vertical power MOSFETs C Liu, RA Khadar, E Matioli IEEE Electron Device Letters 39 (1), 71-74, 2017 | 90 | 2017 |
| 820-V GaN-on-Si quasi-vertical pin diodes with BFOM of 2.0 GW/cm2 RA Khadar, C Liu, L Zhang, P Xiang, K Cheng, E Matioli IEEE Electron Device Letters 39 (3), 401-404, 2018 | 73 | 2018 |
| Vertical GaN-on-Si MOSFETs with monolithically integrated freewheeling Schottky barrier diodes C Liu, RA Khadar, E Matioli IEEE Electron Device Letters 39 (7), 1034-1037, 2018 | 61 | 2018 |
| H-terminated polycrystalline diamond p-channel transistors on GaN-on-silicon R Soleimanzadeh, M Naamoun, RA Khadar, R Van Erp, E Matioli IEEE Electron Device Letters 41 (1), 119-122, 2019 | 18 | 2019 |
| Near-junction heat spreaders for hot spot thermal management of high power density electronic devices R Soleimanzadeh, RA Khadar, M Naamoun, R Van Erp, E Matioli Journal of Applied Physics 126 (16), 2019 | 18 | 2019 |
| Seed dibbling method for the growth of high-quality diamond on GaN R Soleimanzadeh, M Naamoun, A Floriduz, RA Khadar, R van Erp, ... ACS Applied Materials & Interfaces 13 (36), 43516-43523, 2021 | 16 | 2021 |
| Radio-frequency characteristics of Ge-doped vanadium dioxide thin films with increased transition temperature A Muller, RA Khadar, T Abel, N Negm, T Rosca, A Krammer, M Cavalieri, ... ACS Applied Electronic Materials 2 (5), 1263-1272, 2020 | 16 | 2020 |
| Quasi-vertical GaN-on-Si reverse blocking power MOSFETs RA Khadar, A Floriduz, C Liu, R Soleimanzadeh, E Matioli Applied Physics Express 14 (4), 046503, 2021 | 9 | 2021 |
| Resonances on GaN-on-Si epitaxies: A source of output capacitance losses in power HEMTs MS Nikoo, RA Khadar, A Jafari, M Zhu, E Matioli IEEE Electron Device Letters 42 (5), 735-738, 2021 | 9 | 2021 |
| The 3D Smith chart: From theory to experimental reality AA Muller, V Asavei, A Moldoveanu, E Sanabria-Codesal, RA Khadar, ... IEEE Microwave Magazine 21 (11), 22-35, 2020 | 8 | 2020 |
| p-NiO junction termination extensions for GaN power devices RA Khadar, A Floriduz, T Wang, E Matioli Applied Physics Express 14 (7), 071006, 2021 | 7 | 2021 |
| 645 V quasi-vertical GaN power transistors on silicon substrates C Liu, RA Khadar, E Matioli 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 7 | 2018 |
| 3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium … AA Muller, A Moldoveanu, V Asavei, RA Khadar, E Sanabria-Codesal, ... Scientific reports 9 (1), 18346, 2019 | 6 | 2019 |
| Beyond 8 THz displacement-field nano-switches for 5G and 6G communications MS Nikoo, T Wang, P Sohi, M Zhu, F Qaderi, RA Khadar, A Floriduz, ... 2021 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2021 | 4 | 2021 |
| A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches AA Muller, RA Khadar, EA Casu, A Krammer, M Cavalieri, A Schuler, ... 2019 IEEE MTT-S International Microwave Symposium (IMS), 865-868, 2019 | 4 | 2019 |
| Radio Frequency Temperature Transducers Based on Insulator-Metal Phase Transition in VO2 and Ge-Doped VO2 ALD Thin Films AA Muller, R Khadar, KM Niang, G Bai, E Matioli, J Robertson, ... 2021 21st International Conference on Solid-State Sensors, Actuators and …, 2021 | 2 | 2021 |
| Ultra high-power and highly efficient 9xx nm single emitters with up to 65W output power under CW operation R Todt, RA Khadar, S Riedi, A Zeghuzi, C Krammel, M Rösch, N Oliva High-Power Diode Laser Technology XXII 12867, 242-249, 2024 | | 2024 |
| p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices RA Khadar, A Floriduz, T Wang, C Erine, R van Erp, L Nela, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | | 2021 |
Elison MatioliEcole Polytechnique Fédérale de Lausanne (EPFL)Email verificata su epfl.ch
