|Comparison of high efficiency flexible CdTe solar cells on different substrates at low temperature deposition|
A Salavei, D Menossi, F Piccinelli, A Kumar, G Mariotto, M Barbato, ...
Solar energy 139, 13-18, 2016
|Influence of shunt resistance on the performance of an illuminated string of solar cells: theory, simulation, and experimental analysis|
M Barbato, M Meneghini, A Cester, G Mura, E Zanoni, G Meneghesso
IEEE Transactions on Device and Materials Reliability 14 (4), 942-950, 2014
|Potential induced degradation of N-type bifacial silicon solar cells: An investigation based on electrical and optical measurements|
M Barbato, A Barbato, M Meneghini, G Tavernaro, M Rossetto, ...
Solar Energy Materials and Solar Cells 168, 51-61, 2017
|Demonstration of field-and power-dependent ESD failure in AlGaN/GaN RF HEMTs|
I Rossetto, M Meneghini, M Barbato, F Rampazzo, D Marcon, ...
IEEE Transactions on Electron Devices 62 (9), 2830-2836, 2015
|Local shunting in multicrystalline silicon solar cells: Distributed electrical simulations and experiments|
D Giaffreda, P Magnone, M Meneghini, M Barbato, G Meneghesso, ...
IEEE Journal of Photovoltaics 4 (1), 40-47, 2013
|Inactivating SARS-CoV-2 Using 275 nm UV-C LEDs through a spherical irradiation box: design, characterization and validation|
N Trivellin, M Buffolo, F Onelia, A Pizzolato, M Barbato, VT Orlandi, ...
Materials 14 (9), 2315, 2021
|Field-and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level|
I Rossetto, M Meneghini, E Canato, M Barbato, S Stoffels, N Posthuma, ...
Microelectronics Reliability 76, 298-303, 2017
|A physical-based equivalent circuit model for an organic/electrolyte interface|
N Lago, A Cester, N Wrachien, M Natali, SD Quiroga, S Bonetti, ...
Organic Electronics 35, 176-185, 2016
|Effect of shunt resistance on the performance of mc-Silicon solar cells: A combined electro-optical and thermal investigation|
M Barbato, M Meneghini, V Giliberto, D Giaffreda, P Magnone, R De Rose, ...
2012 38th IEEE Photovoltaic Specialists Conference, 001241-001245, 2012
|Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches|
A Tazzoli, M Barbato, F Mattiuzzo, V Ritrovato, G Meneghesso
Microelectronics Reliability 50 (9-11), 1604-1608, 2010
|Evolution of electrical parameters of dielectric-less ohmic RF-MEMS switches during continuous actuation stress|
A Tazzoli, E Autizi, M Barbato, G Meneghesso, F Solazzi, P Farinelli, ...
2009 Proceedings of the European Solid State Device Research Conference, 343-346, 2009
|Analysis of magnesium zinc oxide layers for high efficiency CdTe devices|
E Artegiani, M Leoncini, M Barbato, M Meneghini, G Meneghesso, ...
Thin Solid Films 672, 22-25, 2019
|Characterization and modeling of organic (P3HT: PCBM) solar cells as a function of bias and illumination|
A Rizzo, A Cester, N Wrachien, N Lago, L Torto, M Barbato, J Favaro, ...
Solar Energy Materials and Solar Cells 157, 337-345, 2016
|CdTe solar cells: technology, operation and reliability|
M Barbato, E Artegiani, M Bertoncello, M Meneghini, N Trivellin, ...
Journal of Physics D: Applied Physics 54 (33), 333002, 2021
|Distributed learning of random weights fuzzy neural networks|
R Fierimonte, M Barbato, A Rosato, M Panella
2016 IEEE International Conference on Fuzzy Systems (FUZZ-IEEE), 2287-2294, 2016
|A combined mechanical and electrical characterization procedure for investigating the dynamic behavior of RF-MEMS switches|
M Barbato, V Giliberto, A Cester, G Meneghesso
IEEE Transactions on Device and Materials Reliability 14 (1), 13-20, 2013
|A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells|
E Artegiani, A Gasparotto, P Punathil, V Kumar, M Barbato, M Meneghini, ...
Solar Energy Materials and Solar Cells 226, 111081, 2021
|A novel technique to alleviate the stiction phenomenon in radio frequency microelectromechanical switches|
M Barbato, G Meneghesso
IEEE electron device letters 36 (2), 177-179, 2014
|Temperature as an accelerating factor for lifetime estimation of RF-MEMS switches|
V Mulloni, L Lorenzelli, B Margesin, M Barbato, G Meneghesso
Microelectronic Engineering 160, 63-67, 2016
|ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping|
E Canato, M Meneghini, A Nardo, F Masin, A Barbato, M Barbato, ...
Microelectronics Reliability 100, 113334, 2019