| Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate K Ko, K Lee, B So, C Heo, K Lee, T Kwak, SW Han, HY Cha, O Nam Japanese Journal of Applied Physics 56 (1), 015502, 2016 | 12 | 2016 |
| Self-compensation effect in Si-doped Al0. 55Ga0. 45N layers for deep ultraviolet applications J Pyeon, J Kim, M Jeon, K Ko, E Shin, O Nam Japanese Journal of Applied Physics 54 (5), 051002, 2015 | 10 | 2015 |
| Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC C Heo, J Jang, K Lee, B So, K Lee, K Ko, O Nam Journal of nanoscience and nanotechnology 17 (1), 577-580, 2017 | 4 | 2017 |
| GaN growth on SiC (0001) substrates by metal-organic chemical vapor deposition K Lee, B So, K Lee, C Heo, K Ko, J Jang, O Nam Journal of Nanoscience and Nanotechnology 16 (11), 11802-11806, 2016 | 1 | 2016 |
| GaN Epitaxial Layer Grown with Conductive Al x Ga1− x N Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition B So, K Lee, K Lee, C Heo, J Pyeon, K Ko, J Jang, O Nam Journal of Nanoscience and Nanotechnology 16 (5), 4914-4918, 2016 | 1 | 2016 |
