Fulvia Patella
Fulvia Patella
University of Roma Tor Vergata
Email verificata su roma2.infn.it
Citata da
Citata da
Nature of the dead layer in CdS and its effect on exciton reflectance spectra
F Evangelisti, A Frova, F Patella
Physical Review B 10 (10), 4253, 1974
Growth of Ge–Si (111) epitaxial layers: intermixing, strain relaxation and island formation
N Motta, A Sgarlata, R Calarco, Q Nguyen, JC Cal, F Patella, A Balzarotti, ...
Surface science 406 (1-3), 254-263, 1998
Palladium clusters on graphite: Evidence of resonant hybrid states in the valence and conduction bands
M Cini, M De Crescenzi, F Patella, N Motta, M Sastry, F Rochet, ...
Physical Review B 41 (9), 5685, 1990
Tracing the two-to three-dimensional transition in the InAs/GaAs (001) heteroepitaxial growth
F Patella, S Nufris, F Arciprete, M Fanfoni, E Placidi, A Sgarlata, ...
Physical Review B 67 (20), 205308, 2003
Valence charge fluctuations in Y Ba 2 Cu 3 O 7− δ from core-level spectroscopies
A Balzarotti, M De Crescenzi, N Motta, F Patella, A Sgarlata
Physical Review B 38 (10), 6461, 1988
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs (001)
F Patella, F Arciprete, M Fanfoni, A Balzarotti, E Placidi
Applied physics letters 88 (16), 161903, 2006
Bremsstrahlung-isochromat-spectroscopy and x-ray-photoelectron-spectroscopy investigation of the electronic structure of β-FeSi 2 and the Fe/Si (111) interface
M De Crescenzi, G Gaggiotti, N Motta, F Patella, A Balzarotti, J Derrien
Physical Review B 42 (9), 5871, 1990
Low-energy electron-loss spectroscopy and Auger-electron-spectroscopy studies of noble-metal—silicon interfaces: Si-Au system
P Perfetti, S Nannarone, F Patella, C Quaresima, M Capozi, A Savoia, ...
Physical Review B 26 (3), 1125, 1982
Step erosion during nucleation of quantum dots
E Placidi, F Arciprete, V Sessi, M Fanfoni, F Patella, A Balzarotti
Applied Physics Letters 86 (24), 241913, 2005
Self-assembly of InAs and Si/Ge quantum dots on structured surfaces
F Patella, A Sgarlata, F Arciprete, S Nufris, PD Szkutnik, E Placidi, ...
Journal of Physics: Condensed Matter 16 (17), S1503, 2004
InAs/GaAs (001) epitaxy: kinetic effects in the two-dimensional to three-dimensional transition
E Placidi, F Arciprete, M Fanfoni, F Patella, E Orsini, A Balzarotti
Journal of Physics: Condensed Matter 19 (22), 225006, 2007
Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs (001)
F Patella, M Fanfoni, F Arciprete, S Nufris, E Placidi, A Balzarotti
Applied Physics Letters 78 (3), 320-322, 2001
Experimental study of the GaP-Si interface
P Perfetti, F Patella, F Sette, C Quaresima, C Capasso, A Savoia, ...
Physical Review B 30 (8), 4533, 1984
Surface electronic structure studies of GaAs (110)
JA Knapp, DE Eastman, KC Pandey, F Patella
Journal of Vacuum Science and Technology 15 (4), 1252-1255, 1978
How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of
F Arciprete, E Placidi, V Sessi, M Fanfoni, F Patella, A Balzarotti
Applied physics letters 89 (4), 041904, 2006
Electronic correlations in Y Ba 2 Cu 3 O 7− δ from Auger spectroscopy
A Balzarotti, M De Crescenzi, C Giovannella, R Messi, N Motta, F Patella, ...
Physical Review B 36 (16), 8285, 1987
Photoemission studies of a‐SixC1−x:H/a‐Si and a‐SixC1−x:H/ hydrogenated amorphous silicon heterojunctions
F Evangelisti, P Fiorini, C Giovannella, F Patella, P Perfetti, C Quaresima, ...
Applied physics letters 44 (8), 764-766, 1984
Temperature dependence of the size distribution function of InAs quantum dots on GaAs (001)
F Arciprete, M Fanfoni, F Patella, A Della Pia, A Balzarotti, E Placidi
Physical Review B 81 (16), 165306, 2010
Sudden nucleation versus scale invariance of InAs quantum dots on GaAs
M Fanfoni, E Placidi, F Arciprete, E Orsini, F Patella, A Balzarotti
Physical Review B 75 (24), 245312, 2007
Resonant photoemission from surface states in GaP
F Sette, P Perfetti, F Patella, C Quaresima, C Capasso, M Capozi, ...
Physical Review B 28 (8), 4882, 1983
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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