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Alessandro De Cecco
Alessandro De Cecco
Institut Néel
Email verificata su neel.cnrs.fr
Titolo
Citata da
Citata da
Anno
Interplay between electron overheating and ac Josephson effect
A De Cecco, K Le Calvez, B Sacépé, CB Winkelmann, H Courtois
Physical Review B 93 (18), 180505, 2016
342016
An epitaxial graphene platform for zero-energy edge state nanoelectronics
VS Prudkovskiy, Y Hu, K Zhang, Y Hu, P Ji, G Nunn, J Zhao, C Shi, ...
Nature Communications 13 (1), 7814, 2022
112022
Non-invasive nanoscale potentiometry and ballistic transport in epigraphene nanoribbons
A De Cecco, VS Prudkovskiy, D Wander, R Ganguly, C Berger, ...
Nano letters 20 (5), 3786-3790, 2020
112020
Epigraphene: the first viable platform for seamless zero-mode graphene nanoelectronics
V Prudkovskiy, Y Hu, Y Hu, K Zhang, P Ji, G Nunn, J Zhao, C Shi, ...
2022
Dissipationless zero energy epigraphene edge state for nanoelectronics
V Prudkovskiy, Y Hu, K Zhang, Y Hu, P Ji, G Nunn, J Zhao, C Shi, ...
2021
An epigraphene platform for coherent 1D nanoelectronics
V Prudkovskiy, Y Hu, K Zhang, Y Hu, P Ji, G Nunn, J Zhao, C Shi, ...
2019
Protected transport in the epigraphene edge state
V Prudkovskiy, Y Hu, K Zhang, Y Hu, P Ji, G Nunn, J Zhao, C Shi, ...
arXiv e-prints, arXiv: 1910.03697, 2019
2019
Epitaxial graphene growth at low argon pressure and characterization of buffer layer on SiC (0001)
T Wang, P Landois, JR Huntzinger, AA Zahab, A de Cecco, H Courtois, ...
GDR-I Graphene and co Annual meeting 2018, 2018
2018
Electronique quantique dans les nano-structures explorées par microscopie à sonde locale
A De Cecco
Université Grenoble Alpes (ComUE), 2018
2018
Growth of epitaxial graphene on SiC (0001) at low argon pressure and its characterization
T Wang, P Landois, M Bayle, JR Huntzinger, A de Cecco, H Courtois, ...
ICPS, 2018
2018
Ballistic transport in long sidewall graphene nanoribbons probed by STM potentiometry
V Prudkovskiy, A de Cecco, D Deniz, Y Hu, Y Hu, JP Turmaud, J Gigliotti, ...
APS March Meeting Abstracts 2018, C40. 008, 2018
2018
Epitaxial growth of low doped monolayer graphene on 4H-SIC (0001) at low argon pressure
T Wang, P Landois, M Bayle, JR Huntzinger, A de Cecco, C Winkelmann, ...
GDR-I Graphene and co Annual meeting 2017, 2017
2017
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Articoli 1–12